Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - HS2FA R3G HS2GA R3G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
HS2FA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1.5A DO214AC	Active	Standard	300V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2GA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	Active	Standard	600V	1.5A	1.7V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS2BA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	Active	Standard	100V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HER203G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS215LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A SOD123W	Active	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS315LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A SOD123W	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
MUR120S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	Active	Standard	200V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	2µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
TSSE3U45HRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123HE	Active	Schottky	45V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
TSSE3U60HRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SOD123HE	Active	Schottky	60V	3A	580mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
TSSW3U45HRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123W	Active	Schottky	45V	3A	470mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 45V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
TSSW3U60HRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SOD123W	Active	Schottky	60V	3A	580mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
TSSE3H60 RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SOD123HE	Active	Schottky	60V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
TSSE3H45 RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 3A SOD123HE	Active	Schottky	45V	3A	570mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
BYG21MHR3G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 1KV 1.5A DO214AC	Active	Avalanche	1000V	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1HL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A SUB SMA	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS315LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A SOD123W	Active	Schottky	150V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS220LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 2A SOD123W	Active	Schottky	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS320LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 3A SOD123W	Active	Schottky	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS36LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SOD123W	Active	Schottky	60V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
ES2AAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AC	Active	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2HA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 2A DO214AC	Active	Standard	500V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S3JBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3MBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AA	Active	Standard	1000V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3AB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AA	Active	Standard	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3DB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AA	Active	Standard	200V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2K R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	Active	Standard	800V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2DAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES2FAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO214AC	Active	Standard	300V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS310L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF26G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SF24G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SK110B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO214AA	Active	Schottky	100V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SF28G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS22 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS26 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS23 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS210 R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO214AA	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AA	Active	Standard	600V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS2J R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
HS3M R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AB	Not For New Designs	Standard	1000V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3K R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Not For New Designs	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3M V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 3A DO214AB	Active	Standard	1000V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3J R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Not For New Designs	Standard	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3J V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AB	Active	Standard	600V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	10µA @ 600V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSP3H150S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 3A TO277A	Active	Schottky	150V	3A	860mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	100µA @ 150V	150pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
ES3D R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 3A DO214AB	Not For New Designs	Standard	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3BB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AA	Active	Standard	100V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S5JBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A DO214AA	Active	Standard	600V	5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single