Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - ES1JLW RVG ES1GLW RVG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
ES1JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
ES1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS19L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS2BA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	Active	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2DA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	Active	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2AAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	Active	Standard	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1F R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
UF1GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	1µA @ 400V	25pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
UF1JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	Active	Standard	600V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
S1DFSHMWG	Taiwan Semiconductor Corporation	DIODE 1A 200V AEC-Q101 SOD-1	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1GFSHMWG	Taiwan Semiconductor Corporation	DIODE 1A 400V AEC-Q101 SOD-1	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1JFSHMWG	Taiwan Semiconductor Corporation	DIODE 1A 600V AEC-Q101 SOD-1	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1KFSHMWG	Taiwan Semiconductor Corporation	DIODE 1A 800V AEC-Q101 SOD-1	Active	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
S1MFSHMWG	Taiwan Semiconductor Corporation	DIODE 1A 1000V AEC-Q101 SOD-	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
SS24L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
RS1DFS MWG	Taiwan Semiconductor Corporation	DIODE	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1GFS MWG	Taiwan Semiconductor Corporation	DIODE	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1JFS MWG	Taiwan Semiconductor Corporation	DIODE	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1KFS MWG	Taiwan Semiconductor Corporation	DIODE	Active	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
RS1MFS MWG	Taiwan Semiconductor Corporation	DIODE	Active	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	7pF @ 4V, 1MHz	Surface Mount	SOD-128	SOD-128	-55°C ~ 150°C
SS22L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS23L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS25L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS26L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SUB SMA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS210L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SUB SMA	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SOD123W	Active	Schottky	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 125°C
SS210LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SOD123W	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 100V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
RS2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	Active	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS1H4LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123HE	Active	Schottky	40V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 40V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS1H6LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123HE	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 60V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS2GA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2KA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC	Active	Standard	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2MA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A DO214AC	Active	Standard	1000V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS24LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SOD123W	Active	Schottky	40V	2A	550mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 125°C
SS210LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A SOD123W	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	20µA @ 100V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS26LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A SOD123W	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
ES1CL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	Active	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
ES1GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS29L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S2B R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	Active	Standard	100V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2G R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2D R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2J R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO214AA	Active	Standard	600V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2BAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	Active	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS2DAHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	Active	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS13LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C

Manufacturers for Diodes - Rectifiers - Single