Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 5A DO214AA ActiveStandard800V5A1.1V @ 5AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 800V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB Not For New DesignsStandard1000V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 1000V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AA ActiveStandard400V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 3A DO214AA ActiveStandard50V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 50V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB Not For New DesignsStandard200V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 200V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AB Not For New DesignsStandard600V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 600V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB ActiveStandard200V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 200V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AB ActiveStandard400V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 400V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AB ActiveStandard600V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 600V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO214AB ActiveStandard800V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 800V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AB ActiveStandard1000V3A1.15V @ 3AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 1000V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A SUB SMA ActiveSchottky150V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO214AA ActiveStandard100V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V25pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AC ActiveStandard600V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)55ns2µA @ 600V20pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO214AB ActiveStandard600V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 600V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 5A DO214AB ActiveStandard800V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 800V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 5A DO214AB Not For New DesignsStandard50V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 50V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 5A DO214AB Not For New DesignsStandard100V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 100V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 5A DO214AB Not For New DesignsStandard200V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 200V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 5A DO214AB Not For New DesignsStandard400V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 400V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO214AB Not For New DesignsStandard600V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 600V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 5A DO214AB Not For New DesignsStandard800V5A1.15V @ 5AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 800V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 4A DO214AB ActiveStandard400V4A1.15V @ 4AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 400V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 4A DO214AB ActiveStandard600V4A1.15V @ 4AStandard Recovery >500ns, > 200mA (Io)1.5µs10µA @ 600V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 4A DO214AB Not For New DesignsStandard50V4A1.15V @ 4AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 50V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 4A DO214AB Not For New DesignsStandard100V4A1.15V @ 4AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 100V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 4A DO214AB Not For New DesignsStandard800V4A1.15V @ 4AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 800V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO214AA ActiveStandard1000V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 1000V50pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 2A DO204AC ActiveStandard200V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)25ns5µA @ 200V35pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 2A DO214AA ActiveStandard600V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V20pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO201AD ActiveStandard1000V3A1V @ 3AStandard Recovery >500ns, > 200mA (Io)
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5µA @ 1000V25pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 3A DO214AC ActiveSchottky100V3A850mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 3A DO214AC ActiveSchottky150V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 40V 3A DO214AB Not For New DesignsStandard40V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 3A DO214AB Not For New DesignsSchottky50V3A750mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 3A 50V DO-214AB ActiveSchottky50V3A750mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A DO214AB Not For New DesignsStandard400V8A985mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 400V48pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB Not For New DesignsStandard200V3A875mV @ 3AFast Recovery =< 500ns, > 200mA (Io)25ns5µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 8A DO214AB Not For New DesignsStandard1000V8A985mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 1000V48pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AB ActiveStandard200V3A875mV @ 3AFast Recovery =< 500ns, > 200mA (Io)25ns5µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 10A DO214AB Not For New DesignsStandard800V10A1.1V @ 10AFast Recovery =< 500ns, > 200mA (Io)
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1µA @ 800V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 10A DO214AB ActiveStandard400V10A1.1V @ 10AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 400V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 4A DO214AA ActiveSchottky40V4A500mV @ 4AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 40V235pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AA ActiveStandard400V3A1.13V @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V41pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 3A DO214AA ActiveStandard500V3A1.45V @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V34pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AA ActiveStandard200V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V46pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 12A DO214AB Not For New DesignsStandard1000V12A1.1V @ 12AFast Recovery =< 500ns, > 200mA (Io)
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1µA @ 1000V78pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 12A DO214AB ActiveStandard1000V12A1.1V @ 12AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 1000V78pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 3A 100V DO-214AB ActiveSchottky100V3A850mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 3A DO214AA ActiveSchottky150V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
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