Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SFF1606G C0G RSFKLHMHG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SFF1606G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A ITO220AB	Active	Standard	400V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
RSFKLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	Active	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAT54 RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT23	Active	Schottky	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
BAT54C RFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOT23	Active	Schottky	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 125°C
SR104 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO204AL	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
S1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1AL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
TSS42U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA 0603	Active	Schottky	30V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-55°C ~ 125°C
TSS54U RGG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA 0603	Active	Schottky	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	10pF @ 1V, 1MHz	Surface Mount	0201 (0603 Metric)	0603	-65°C ~ 125°C
S1JLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.2A SOD123	Active	Standard	600V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
1N4007G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO204AL	Active	Standard	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S2GA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	Active	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1M R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC	Active	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1ML RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 800MA SUB SMA	Active	Standard	1000V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	Active	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1JLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.2A SOD123	Active	Standard	600V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1ML R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 800MA SUB SMA	Active	Standard	1000V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS14L R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
LL4004G L0	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MELF	Active	Standard	400V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF	MELF	-65°C ~ 150°C
SR210 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 2A DO204AC	Active	Schottky	100V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
RSFDL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 500MA SUBSMA	Active	Standard	200V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
UF4007 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO204AL	Active	Standard	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S15DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A SOD123W	Active	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
ESH2D R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	Active	Standard	200V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	2µA @ 200V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
ES2C R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO214AA	Active	Standard	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES2G R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO214AA	Active	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS1GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS36L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	Active	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S4A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO214AB	Active	Standard	50V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 50V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4D V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB	Active	Standard	200V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 4A DO214AB	Active	Standard	100V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 100V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4M V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 4A DO214AB	Active	Standard	1000V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4K V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 4A DO214AB	Active	Standard	800V	4A	1.15V @ 4A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SS34L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S4M R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 4A DO214AB	Not For New Designs	Standard	1000V	4A	1.15V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 1000V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
S4G R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 4A DO214AB	Not For New Designs	Standard	400V	4A	1.15V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSSA3U60 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A DO214AC	Active	Schottky	60V	3A	540mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	500µA @ 60V	450pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
HS3G R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Not For New Designs	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3A V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Active	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3K V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AB	Active	Standard	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3B V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Active	Standard	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
RS3B R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 3A DO214AB	Not For New Designs	Standard	100V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	10µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3A R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 3A DO214AB	Not For New Designs	Standard	50V	3A	1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS3G V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AB	Active	Standard	400V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single