Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - S1A R3G S1B R3G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	Active	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1DL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
SR110 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A DO204AL	Active	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
S1M R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A DO214AC	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
1N4005G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1MLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.2A SOD123HE	Active	Standard	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1MLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1KLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.2A SOD123	Active	Standard	800V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1KLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD123W	Active	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S2MA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A DO214AC	Active	Standard	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2KA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO214AC	Active	Standard	800V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S1KL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SUB SMA	Active	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 800V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ML R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SUB SMA	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123W	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1MLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W	Active	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1MLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1AL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	Active	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 800MA SUBSMA	Active	Standard	100V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1DL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 800MA SUBSMA	Active	Standard	200V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1KLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.2A SOD123	Active	Standard	800V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1KLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD123W	Active	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 800V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1KLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD123W	Active	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1MLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.2A SOD123HE	Active	Standard	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Active	Standard	600V	1A	1.3V @ 1A	Standard Recovery >500ns, > 200mA (Io)	600ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1B R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1G R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1A R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1D R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS15 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	Active	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS13 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS12 R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	Active	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
RS1KLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.2A SOD123	Active	Standard	800V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 800V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1JLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.2A SOD123	Active	Standard	600V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 600V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1MLS RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.2A SOD123HE	Active	Standard	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S1JM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MICRO SMA	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 600V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
SS13LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SOD123HE	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
S15GLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A SOD123W	Active	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS110LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123HE	Active	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS115LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123W	Active	Schottky	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single