Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - S15JLWHRVG S15KLWHRVG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
S15JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A SOD123W	Active	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15KLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A SOD123W	Active	Standard	800V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15MLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A SOD123W	Active	Standard	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S1GM RSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 400V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
SS12LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SOD123HE	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SS14LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123HE	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SS14LW RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123W	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
SS16LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123HE	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
S2BA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	Active	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2DA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	Active	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2JA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	Active	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2AA R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	Active	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS13L RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
FR103G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR104G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S15DLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A SOD123W	Active	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15GLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A SOD123W	Active	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15KLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A SOD123W	Active	Standard	800V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15MLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.5A SOD123W	Active	Standard	1000V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
S15JLW RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A SOD123W	Active	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RSFBL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 500MA SUBSMA	Active	Standard	100V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFAL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 500MA SUB SMA	Active	Standard	50V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1KL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 800MA SUBSMA	Active	Standard	800V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1JL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 800MA SUBSMA	Active	Standard	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1AL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 800MA SUB SMA	Active	Standard	50V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1GL R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 800MA SUBSMA	Active	Standard	400V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RS1K R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	Active	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS110LSHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123HE	Active	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1JLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.2A SOD123	Active	Standard	600V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 600V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1JLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123W	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1KLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.2A SOD123	Active	Standard	800V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 800V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1MLSHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1.2A SOD123HE	Active	Standard	1000V	1.2A	1.3V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 1000V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1MLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 1A SOD123W	Active	Standard	1000V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS13LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SOD123HE	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SS14LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SOD123HE	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
RS1DLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123W	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
RS1KLWHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD123W	Active	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 800V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 175°C
SS12LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SOD123HE	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 125°C
SS16LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SOD123HE	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
FR105G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
B0530W RHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 500MA SOD123	Active	Schottky	30V	500mA	430mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
S1JMHRSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A MICRO SMA	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 600V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
SS115LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123W	Active	Schottky	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 150V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
HER106G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
HS1BL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	Active	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1DL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1FL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1AL RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	Active	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1GMHRSG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A MICRO SMA	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	1µA @ 400V	5pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 175°C
SS110LWHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A SOD123W	Active	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 100V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single