Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
WeEn Semiconductors DIODE GEN PURP 500V 9A D2PAK ActiveStandard500V9A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 500V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 9A TO220AC ActiveStandard500V9A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 500V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 9A TO220F ActiveStandard600V9A1.26V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 200V 8A TO220AC ActiveStandard200V8A1.05V @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 200V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 14A TO220AC ActiveStandard500V14A1.38V @ 30AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 500V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 10A TO220AC ActiveStandard600V10A2V @ 10AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V
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Through HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 10A TO220-2 ActiveStandard600V10A2V @ 10AFast Recovery =< 500ns, > 200mA (Io)20ns10µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)18ns20µA @ 600V
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Through HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220F ActiveStandard600V8A1.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)18ns20µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 9A TO220F ActiveStandard600V9A1.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns50µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 10A TO220F ActiveStandard500V10A2.5V @ 10AFast Recovery =< 500ns, > 200mA (Io)18ns200µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 400V 9A TO220AC ActiveStandard400V9A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 400V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220F ActiveStandard600V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)52ns150µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 200V 14A TO220AC ActiveStandard200V14A1.05V @ 14AFast Recovery =< 500ns, > 200mA (Io)30ns50µA @ 200V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 200V 8A TO220F ActiveStandard200V8A1.05V @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 200V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 10A TO220AC ActiveStandard500V10A2.9V @ 10AFast Recovery =< 500ns, > 200mA (Io)55ns200µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 15A TO220F ActiveStandard600V15A3.2V @ 15AFast Recovery =< 500ns, > 200mA (Io)18ns10µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220F175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 15A TO220F ActiveStandard600V15A1.38V @ 15AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A1.38V @ 15AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 20A TO220F ActiveStandard500V20A2.9V @ 20AFast Recovery =< 500ns, > 200mA (Io)55ns200µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE SCHOTTKY 650V 4A TO220AC ActiveSilicon Carbide Schottky650V4A1.7V @ 4ANo Recovery Time > 500mA (Io)0ns170µA @ 650V130pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 30A TO220F ActiveStandard600V30A1.8V @ 30AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP175°C (Max)
WeEn Semiconductors DIODE SCHOTTKY 650V 6A TO220AC ActiveSilicon Carbide Schottky650V6A1.7V @ 6ANo Recovery Time > 500mA (Io)0ns200µA @ 650V190pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE SCHOTTKY 650V 10A TO220AC ActiveSilicon Carbide Schottky650V10A1.85V @ 10ANo Recovery Time > 500mA (Io)0ns230µA @ 650V250pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE SCHOTTKY 650V 10A TO220AC ActiveSilicon Carbide Schottky650V10A1.7V @ 10ANo Recovery Time > 500mA (Io)0ns250µA @ 650V300pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE SCHOTTKY 650V 20A TO220AC ActiveSilicon Carbide Schottky650V20A1.7V @ 20ANo Recovery Time > 500mA (Io)0ns500µA @ 650V600pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 5A TO220AC ActiveStandard500V5A2.9V @ 5AFast Recovery =< 500ns, > 200mA (Io)50ns100µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 5A DPAK ActiveStandard600V5A1.9V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns50µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 200V 8A DPAK ActiveStandard200V8A1.3V @ 20AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 200V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 15A TO220AC ActiveStandard500V15A2.9V @ 15AFast Recovery =< 500ns, > 200mA (Io)55ns200µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 20A TO220AC ActiveStandard500V20A2.9V @ 20AFast Recovery =< 500ns, > 200mA (Io)55ns200µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 30A TO247-2 ActiveStandard600V30A2.75V @ 30AFast Recovery =< 500ns, > 200mA (Io)22ns10µA @ 600V
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Through HoleTO-247-2TO-247-2175°C (Max)
WeEn Semiconductors DIODE GEN PURP 150V 8A TO220AC ActiveStandard150V8A1.05V @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 150V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 5A TO220F ActiveStandard600V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 10A TO220F ActiveStandard500V10A2.9V @ 10AFast Recovery =< 500ns, > 200mA (Io)55ns200µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE SCHOTTKY 650V 8A TO220AC ActiveSilicon Carbide Schottky650V8A1.7V @ 8ANo Recovery Time > 500mA (Io)0ns230µA @ 650V260pF @ 1V, 1MHzThrough HoleTO-220-2TO-220AC175°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)52ns150µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 100V 8A TO220AC ActiveStandard100V8A1.05V @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns10µA @ 100V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 9A TO220F ActiveStandard500V9A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 500V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 5A I2PAK ActiveStandard600V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Through HoleTO-262-3 Long Leads, I²Pak, TO-262AAI2PAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 9A I2PAK ActiveStandard600V9A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Through HoleTO-262-3 Long Leads, I²Pak, TO-262AAI2PAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220F ActiveStandard600V8A3.2V @ 8AFast Recovery =< 500ns, > 200mA (Io)12.5ns150µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 9A TO220AC ActiveStandard600V9A1.25V @ 8AFast Recovery =< 500ns, > 200mA (Io)60ns50µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 800V 8A TO220AC ActiveStandard800V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 800V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 10A D2PAK ActiveStandard500V10A2.9V @ 10AFast Recovery =< 500ns, > 200mA (Io)55ns200µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 5A D2PAK ActiveStandard500V5A2.9V @ 5AFast Recovery =< 500ns, > 200mA (Io)50ns100µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 500V 8A D2PAK ActiveStandard500V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)52ns150µA @ 600V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD2PAK150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.5V @ 8AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 600V
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Through HoleTO-220-2TO-220AC150°C (Max)
WeEn Semiconductors DIODE GEN PURP 600V 8A TO220F ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 600V
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Through HoleTO-220-2 Full Pack, Isolated TabTO-220FP150°C (Max)
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