Taiwan Semiconductor Distributor - Diodes - Rectifiers - Single - SK310B R5G TPMR6J S1G - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SK310B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A DO214AA	Active	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
TPMR6J S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A TO277A	Active	Standard	600V	6A	1.8V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SR504 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO201AD	Active	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
SK510B R5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AA	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK54C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 5A DO214AB	Not For New Designs	Schottky	40V	5A	550mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK56C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 60V DO-214AB	Active	Schottky	60V	5A	750mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SR510 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO201AD	Active	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
MUR340SB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 3A DO214AA	Active	Standard	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
HS5B R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 5A DO214AB	Not For New Designs	Standard	100V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TPUH6D S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 6A TO277A	Active	Standard	200V	6A	1.05V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPUH6J S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 6A TO277A	Active	Standard	600V	6A	3V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 600V	50pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
HS5F V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 5A DO214AB	Active	Standard	300V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5D R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 5A DO214AB	Not For New Designs	Standard	200V	5A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5K R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	Not For New Designs	Standard	800V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
HS5K V7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 5A DO214AB	Active	Standard	800V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 800V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSPB5H100S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A SMPC4.0	Active	Schottky	100V	5A	660mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB5H120S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 5A SMPC4.0	Active	Schottky	120V	5A	740mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB5H150S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A SMPC4.0	Active	Schottky	150V	5A	840mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TPAU3J S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 600V 3A TO277A	Active	Avalanche	600V	3A	1.88V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPAU3D S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 200V 3A TO277A	Active	Avalanche	200V	3A	1.88V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 200V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPAR3J S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 600V 3A TO277A	Active	Avalanche	600V	3A	1.55V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 600V	58pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPAU3G S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 400V 3A TO277A	Active	Avalanche	400V	3A	1.88V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
S15MC R7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 15A DO214AB	Active	Standard	1000V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TPAR3D S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 200V 3A TO277A	Active	Avalanche	200V	3A	1.55V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 200V	58pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
TPAR3G S1G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 400V 3A TO277A	Active	Avalanche	400V	3A	1.55V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	10µA @ 400V	58pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
S15MCHR7G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 15A DO214AB	Active	Standard	1000V	15A	1.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	1µA @ 1000V	93pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK510C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 5A DO214AB	Not For New Designs	Schottky	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK515C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 5A DO214AB	Not For New Designs	Schottky	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK515C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 150V DO-214AB	Active	Schottky	150V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 150V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
SK520C V7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 5A 200V DO-214AB	Active	Schottky	200V	5A	950mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 200V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSP15H150S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 15A TO277A	Active	Schottky	150V	15A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 150V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TSP15H120S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 15A TO277A	Active	Schottky	120V	15A	750mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TPMR10D S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO277A	Active	Standard	200V	10A	950mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	140pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
MUR460 A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 4A DO201AD	Active	Standard	600V	4A	1.28V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	65pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 175°C
TPMR10G S1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO277A	Active	Standard	400V	10A	1.2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	140pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SK810C R7G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A DO214AB	Not For New Designs	Schottky	100V	8A	900mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
TSP15U50S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 15A TO277A	Active	Schottky	50V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 50V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 150°C
TSN520M60 S3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A 8PDFN	Active	Schottky	60V	20A	580mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	8-PowerTDFN	8-PDFN (5x6)	-55°C ~ 150°C
TSPB15U45S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 15A SMPC4.0	Active	Schottky	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSPB15U50S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 15A SMPC4.0	Active	Schottky	50V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 50V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSN525M60 S3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 25A 8PDFN	Active	Schottky	60V	25A	630mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	8-PowerTDFN	8-PDFN (5x6)	-55°C ~ 150°C
TSPB15U100S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 15A SMPC4.0	Active	Schottky	100V	15A	700mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
TSN525M60HS3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 25A 8PDFN	Active	Schottky	60V	25A	630mV @ 25A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	8-PowerTDFN	8-PDFN (5x6)	-55°C ~ 150°C
TSPB10U45S S1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 10A SMPC4.0	Active	Schottky	45V	10A	460mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 45V	-	Surface Mount	TO-277, 3-PowerDFN	SMPC4.0	-55°C ~ 150°C
HERAF808G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1KV 8A ITO220AC	Active	Standard	1000V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	10µA @ 1000V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UGF1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AB	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	10µA @ 600V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1005G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A ITO220AB	Active	Standard	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFAF1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AC	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF1006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A ITO220AB	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
TST30L150CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 15A TO220AB	Active	Schottky	150V	15A	920mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single