Microsemi Distributor - Diodes - Rectifiers - Single - UPS120E3/TR7 UPS5819E3TR7

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UPS120E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE1	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 125°C
UPS5819E3TR7	Microsemi Corporation	DIODE SCHOTTKY 40V 1A POWERMITE1	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	60pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 150°C
UPR5E3/TR7	Microsemi Corporation	DIODE GEN PURP 50V 2.5A DO216	Active	Standard	50V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 50V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
LSM115JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 15V 1A DO214AC	Active	Schottky	15V	1A	220mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	-	Surface Mount	DO-214AC, SMA	DO-214AC	-55°C ~ 150°C
UPS5100E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 5A POWERMITE	Active	Schottky	100V	5A	810mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	150pF @ 4V, 1MHz	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
UPS840E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 8A POWERMITE3	Active	Schottky	40V	8A	450mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
1N4148-1	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35	Active	Standard	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4148UR-1	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO213AA	Active	Standard	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	-	Surface Mount	DO-213AA (Glass)	DO-213AA	-65°C ~ 175°C
1N647-1	Microsemi Corporation	DIODE GEN PURP 400V 400MA DO35	Active	Standard	400V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 400V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
APT40DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 40A TO247	Active	Standard	1000V	40A	3V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT60S20BG	Microsemi Corporation	DIODE SCHOTTKY 200V 75A TO247	Active	Schottky	200V	75A	900mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	1mA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
APT100S20BG	Microsemi Corporation	DIODE SCHOTTKY 200V 120A TO247	Active	Schottky	200V	120A	950mV @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	2mA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
1N5809	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 3A B-MELF	Active	Standard	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N6642US	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5D	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
1N5822US	Microsemi Corporation	DIODE SCHOTTKY 40V 3A B-MELF	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100mA @ 40V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
UPS5817E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE1	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 150°C
UPS3100E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 3A POWERMITE	Active	Schottky	100V	3A	760mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 100V	85pF @ 4V, 1MHz	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
UPS115UE3/TR7	Microsemi Corporation	DIODE SCHOTTKY 15V 1A POWERMITE	Active	Schottky	15V	1A	220mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	150pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
UPS760E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 60V 7A POWERMITE3	Active	Schottky	60V	7A	600mV @ 7A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	375pF @ 4V, 1MHz	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
1N645-1	Microsemi Corporation	DIODE GEN PURP 225V 400MA DO35	Active	Standard	225V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 225V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
APT40DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 40A TO247	Active	Standard	600V	40A	2.4V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30D60BG	Microsemi Corporation	DIODE GEN PURP 600V 30A TO247	Active	Standard	600V	30A	1.8V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N649-1	Microsemi Corporation	DIODE GEN PURP 600V 400MA DO35	Active	Standard	600V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 600V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
APT75DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 75A TO247	Active	Standard	600V	75A	2.5V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	31ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30D100BG	Microsemi Corporation	DIODE GEN PURP 1KV 30A TO247	Active	Standard	1000V	30A	2.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	290ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
APT60D60BG	Microsemi Corporation	DIODE GEN PURP 600V 60A TO247	Active	Standard	600V	60A	1.8V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	250µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
APT60D100BG	Microsemi Corporation	DIODE GEN PURP 1KV 60A TO247	Active	Standard	1000V	60A	2.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	280ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N5712	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO35	Active	Schottky	20V	75mA	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	150nA @ 16V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
1N5802	Microsemi Corporation	DIODE GEN PURP 50V 1A AXIAL	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5711-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO35	Active	Schottky	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
CDLL5819	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO213AB	Active	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-65°C ~ 125°C
MSC020SDA120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 43A TO247	Active	Silicon Carbide Schottky	1200V	43A (DC)	1.8V @ 20A	No Recovery Time > 500mA (Io)	0ns	200µA @ 1200V	104pF @ 400V, 1MHz	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
MSC030SDA120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 30A TO247	Active	Silicon Carbide Schottky	1200V	30A (DC)	1.5V @ 30A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-247-2	TO-247	-
UES1106	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	A, Axial	-	-55°C ~ 150°C
UES1303	Microsemi Corporation	DIODE GEN PURP 150V 6A AXIAL	Active	Standard	150V	6A	925mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	B, Axial	-	175°C (Max)
APT30DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 30A TO247	Active	Standard	600V	30A	2.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT60DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 60A TO247	Active	Standard	600V	60A	2.4V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	25µA @ 600V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 30A TO247	Active	Standard	1200V	30A	3.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	320ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
APT60D120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 60A TO247	Active	Standard	1200V	60A	2.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N5614US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
1N5804US	Microsemi Corporation	DIODE GEN PURP 100V 1A D5A	Active	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
CDLL5711	Microsemi Corporation	DIODE SCHOTTKY 50V 33MA DO213AA	Active	Schottky	50V	33mA	410mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
APT60DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 60A TO247	Active	Standard	1000V	60A	3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	255ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N3611	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5616US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C

Manufacturers for Diodes - Rectifiers - Single