Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A MICRO SMA ActiveSchottky40V2A600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 40V35pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 1A MICRO SMA ActiveSchottky40V1A550mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 40V50pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 2A MICRO SMA ActiveSchottky30V2A600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 30V35pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 1A MICRO SMA ActiveSchottky30V1A520mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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5µA @ 30V50pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 1A SOD123HE ActiveSchottky150V1A850mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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1µA @ 150V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 2A MICRO SMA ActiveSchottky20V2A600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 20V35pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard200V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard400V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard600V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard800V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE ActiveStandard1000V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V7pF @ 4V, 1MHzSurface MountSOD-128SOD-128-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1A SUB SMA ActiveStandard800V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 800V15pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1A SUB SMA ActiveStandard600V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 600V8pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 1A SOD123W ActiveSchottky100V1A800mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500nA @ 100V
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Surface MountSOD-123WSOD123W-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 1A SOD123W ActiveSchottky40V1A650mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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500nA @ 40V
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Surface MountSOD-123WSOD123W-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 1A DO204AL ActiveStandard1000V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 1000V10pF @ 4V, 1MHzThrough HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 2A DO214AC ActiveSchottky60V2A700mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A DO214AC ActiveSchottky40V2A500mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 1A MICRO SMA ActiveSchottky30V1A520mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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5µA @ 30V50pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 1A MICRO SMA ActiveSchottky40V1A550mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 40V50pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1.5A DO214AC ActiveStandard200V1.5A1.4V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)75ns1µA @ 200V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1.5A DO214AC ActiveStandard400V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 400V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 1.5A DO214AC ActiveStandard600V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)250ns5µA @ 600V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 1.5A DO214AC ActiveStandard800V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 800V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 1.5A DO214AC ActiveStandard1000V1.5A1.3V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)500ns5µA @ 1000V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE AVALANCHE 1KV 1.5A DO214AC ActiveAvalanche1000V1.5A1.6V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)120ns1µA @ 1000V13pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 1A SUB SMA ActiveStandard1000V1A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 1000V15pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A SUB SMA ActiveStandard100V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA ActiveStandard200V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 2A MICRO SMA ActiveSchottky30V2A600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 30V35pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 2A MICRO SMA ActiveSchottky20V2A600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 20V35pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 2A SOD123W ActiveSchottky200V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 200V
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Surface MountSOD-123WSOD123W-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 2A MICRO SMA ActiveSchottky40V2A600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 40V35pF @ 4V, 1MHzSurface Mount2-SMD, Flat LeadMicro SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 2A DO214AC ActiveSchottky100V2A850mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 2A DO214AC ActiveSchottky150V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 1A DO214AC ActiveSchottky150V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 1A SUB SMA ActiveStandard100V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 100V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 2A DO204AC ActiveStandard1000V2A1.7V @ 2AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 1000V20pF @ 4V, 1MHzThrough HoleDO-204AC, DO-15, AxialDO-204AC (DO-15)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 2A DO214AC ActiveStandard150V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V25pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 2A DO214AC ActiveStandard200V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V25pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 2A DO214AC ActiveStandard400V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V20pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 2A DO214AC ActiveStandard100V2A950mV @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V25pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 2A DO214AC ActiveStandard300V2A1.3V @ 2AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V20pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 3A SOD123HE ActiveSchottky45V3A470mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 45V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 3A SOD123HE ActiveSchottky60V3A580mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 60V
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Surface MountSOD-123HSOD-123HE-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 1A SUB SMA ActiveStandard400V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 400V8pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1A SUB SMA ActiveStandard200V1A950mV @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 200V10pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 1A SUB SMA ActiveStandard300V1A1.3V @ 1AFast Recovery =< 500ns, > 200mA (Io)35ns5µA @ 300V8pF @ 4V, 1MHzSurface MountDO-219ABSub SMA-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 1.5A DO214AC ActiveStandard50V1.5A1V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 50V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 1.5A DO214AC ActiveStandard200V1.5A1V @ 1.5AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 200V50pF @ 4V, 1MHzSurface MountDO-214AC, SMADO-214AC (SMA)-55°C ~ 150°C
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