Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Global Power Technologies Group DIODE SCHOTTKY 1700V 5A TO247-2 ActiveSilicon Carbide Schottky1700V5A (DC)1.75V @ 5ANo Recovery Time > 500mA (Io)0ns10µA @ 1700V406pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 5A TO220-2 ActiveSilicon Carbide Schottky1200V5A (DC)1.8V @ 5ANo Recovery Time > 500mA (Io)0ns10µA @ 1200V317pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 10A TO247-2 ActiveSilicon Carbide Schottky1200V10A1.8V @ 10ANo Recovery Time > 500mA (Io)0ns20µA @ 1200V635pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 20A TO247-2 ActiveSilicon Carbide Schottky1200V20A (DC)1.8V @ 20ANo Recovery Time > 500mA (Io)0ns40µA @ 1200V1270pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 3A DPAK-2 ActiveSilicon Carbide Schottky600V3A (DC)1.65V @ 3ANo Recovery Time > 500mA (Io)0ns10µA @ 600V158pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 3A TO220-2 ActiveSilicon Carbide Schottky600V3A (DC)1.65V @ 3ANo Recovery Time > 500mA (Io)0ns10µA @ 600V158pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 6A TO252-2 ActiveSilicon Carbide Schottky650V6A (DC)1.65V @ 6ANo Recovery Time > 500mA (Io)0ns60µA @ 650V316pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 6A TO252-2 ActiveSilicon Carbide Schottky600V6A (DC)1.65V @ 6ANo Recovery Time > 500mA (Io)0ns20µA @ 600V316pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 6A TO220-2 ActiveSilicon Carbide Schottky600V6A (DC)1.65V @ 6ANo Recovery Time > 500mA (Io)0ns20µA @ 600V316pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 12A TO220-2 ActiveSilicon Carbide Schottky600V12A1.65V @ 12ANo Recovery Time > 500mA (Io)0ns40µA @ 600V632pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 29A TO252-2 ActiveSilicon Carbide Schottky650V29A (DC)1.9V @ 12ANo Recovery Time > 500mA (Io)0ns200µA @ 650V632pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 10A TO220-2 ActiveSilicon Carbide Schottky1200V10A1.8V @ 10ANo Recovery Time > 500mA (Io)0ns20µA @ 1200V635pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 30A TO247-2 ObsoleteSilicon Carbide Schottky600V30A (DC)1.65V @ 30ANo Recovery Time > 500mA (Io)0ns100µA @ 600V1581pF @ 1V, 1MHZThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 20A TO220-2 ActiveSilicon Carbide Schottky1200V20A (DC)1.8V @ 20ANo Recovery Time > 500mA (Io)0ns40µA @ 1200V1270pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 3A TO220-2 ActiveSilicon Carbide Schottky650V3A (DC)1.65V @ 3ANo Recovery Time > 500mA (Io)0ns30µA @ 650V158pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 3A TO252-2 ActiveSilicon Carbide Schottky650V3A1.65V @ 3ANo Recovery Time > 500mA (Io)0ns200µA @ 650V158pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 15A TO220-2 ActiveSilicon Carbide Schottky600V15A (DC)1.65V @ 5ANo Recovery Time > 500mA (Io)0ns20µA @ 600V264pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-50°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 6A TO220-2 ActiveSilicon Carbide Schottky650V6A1.65V @ 6ANo Recovery Time > 500mA (Io)0ns60µA @ 650V316pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHTKY 1.2KV 24A TO252-2L ActiveSilicon Carbide Schottky1200V24A (DC)1.8V @ 8ANo Recovery Time > 500mA (Io)0ns20µA @ 1200V508pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-50°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 15A TO252 ActiveSilicon Carbide Schottky650V15A (DC)1.65V @ 5ANo Recovery Time > 500mA (Io)
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50µA @ 650V264pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252, (D-Pak)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 5A DPAK-2 ObsoleteSilicon Carbide Schottky1200V5A1.8V @ 5ANo Recovery Time > 500mA (Io)0ns10µA @ 1200V317pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 15A TO220-2 ActiveSilicon Carbide Schottky650V15A (DC)1.65V @ 5ANo Recovery Time > 500mA (Io)
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50µA @ 650V264pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 30A TO252 ActiveSilicon Carbide Schottky650V30A (DC)1.65V @ 10ANo Recovery Time > 500mA (Io)
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100µA @ 650V527pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252, (D-Pak)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 12A TO263-2 ActiveSilicon Carbide Schottky600V12A (DC)1.65V @ 12ANo Recovery Time > 500mA (Io)0ns40µA @ 600V632pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 30A TO247-2 ActiveSilicon Carbide Schottky600V30A (DC)1.65V @ 10ANo Recovery Time > 500mA (Io)
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40µA @ 600V527pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 30A TO220-2 ActiveSilicon Carbide Schottky650V30A (DC)1.65V @ 10ANo Recovery Time > 500mA (Io)
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100µA @ 650V527pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 30A TO220-2 ActiveSilicon Carbide Schottky600V30A (DC)1.65V @ 10ANo Recovery Time > 500mA (Io)0ns40µA @ 600V527pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-50°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 24A TO220-2 ActiveSilicon Carbide Schottky1200V24A (DC)1.8V @ 8ANo Recovery Time > 500mA (Io)0ns20µA @ 1200V508pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-50°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 12A TO220-2 ActiveSilicon Carbide Schottky650V12A (DC)1.65V @ 12ANo Recovery Time > 500mA (Io)0ns120µA @ 650V632pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 12A TO263-2 ActiveSilicon Carbide Schottky600V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns100µA @ 600V487pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 10A TO252-2 ActiveSilicon Carbide Schottky1200V10A (DC)1.8V @ 10ANo Recovery Time > 500mA (Io)0ns20µA @ 1200V635pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2L (DPAK)-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 58A TO247-2 ActiveSilicon Carbide Schottky600V58A (DC)1.65V @ 20ANo Recovery Time > 500mA (Io)0ns70µA @ 600V1054pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-50°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 68A TO247-2 ActiveSilicon Carbide Schottky600V68A (DC)1.65V @ 24ANo Recovery Time > 500mA (Io)
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80µA @ 600V1265pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1200V 15A TO247-2 ActiveSilicon Carbide Schottky1200V15A (DC)1.8V @ 15ANo Recovery Time > 500mA (Io)0ns30µA @ 1200V54pF @ 1200V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 650V 58A TO247-2 ActiveSilicon Carbide Schottky650V58A (DC)1.65V @ 20ANo Recovery Time > 500mA (Io)
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200µA @ 650V1054pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 82A TO247-2 ActiveSilicon Carbide Schottky600V82A (DC)1.9V @ 36ANo Recovery Time > 500mA (Io)
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500µA @ 600V1897pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 50A TO220-2 ActiveSilicon Carbide Schottky1200V50A (DC)1.8V @ 15ANo Recovery Time > 500mA (Io)
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30µA @ 1200V952pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.7KV 10A TO247-2 ActiveSilicon Carbide Schottky1700V10A1.75V @ 10ANo Recovery Time > 500mA (Io)0ns20µA @ 1700V812pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 30A TO247-2 ActiveSilicon Carbide Schottky1200V30A (DC)1.8V @ 30ANo Recovery Time > 500mA (Io)0ns60µA @ 1200V1905pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE GP 1.7KV 300A ADD-A-PAK ActiveStandard1700V300A (DC)1.9V @ 300AStandard Recovery >500ns, > 200mA (Io)540ns
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Chassis MountADD-A-PAK (3)ADD-A-PAK®-40°C ~ 150°C
Global Power Technologies Group DIODE SCHOTT 1.2KV 60A TO247-2 ObsoleteSilicon Carbide Schottky1200V60A (DC)1.7V @ 60ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V3581pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 600V 50A TO247-2 ObsoleteSilicon Carbide Schottky600V50A (DC)1.65V @ 50ANo Recovery Time > 500mA (Io)0ns170µA @ 600V2635pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 50A TO247-2 ObsoleteSilicon Carbide Schottky1200V50A (DC)1.8V @ 50ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V3174pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 175°C
Global Power Technologies Group DIODE SCHOTTKY 600V 3A TO252-2 ObsoleteSilicon Carbide Schottky600V3A (DC)1.7V @ 3ANo Recovery Time > 500mA (Io)0ns100µA @ 600V122pF @ 1V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63TO-252-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 600V 6A TO220-2 ObsoleteSilicon Carbide Schottky600V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns100µA @ 600V243pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 600V 6A TO263-2 ObsoleteSilicon Carbide Schottky600V6A1.7V @ 6ANo Recovery Time > 500mA (Io)0ns100µA @ 600V243pF @ 1V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 8A TO220-2 ObsoleteSilicon Carbide Schottky1200V8A1.7V @ 8ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V477pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 600V 12A TO220-2 ObsoleteSilicon Carbide Schottky600V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns100µA @ 600V487pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1.2KV 15A TO220-2 ObsoleteSilicon Carbide Schottky1200V15A (DC)1.7V @ 15ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V895pF @ 1V, 1MHzThrough HoleTO-220-2TO-220-2-55°C ~ 135°C
Global Power Technologies Group DIODE SCHOTTKY 1200V 15A TO247-2 ObsoleteSilicon Carbide Schottky1200V15A (DC)1.7V @ 15ANo Recovery Time > 500mA (Io)0ns100µA @ 1200V895pF @ 1V, 1MHzThrough HoleTO-247-2TO-247-2-55°C ~ 135°C
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