Taiwan Semiconductor Distributor - Dioden - Gleichrichter - Einzeln - HERAF1604G C0G HERAF1605G C0G - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Dioden-Typ	Spannung - DC Reverse (Vr) (Max)	Strom - Durchschnittlich gleichgerichtet (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Wiederherstellungszeit (trr)	Strom - Rückwärtsleckage @ Vr	Kapazität @ Vr, F	Befestigungsart	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Kreuzung
HERAF1604G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A ITO220AC	Active	Standard	300V	16A	1V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
HERAF1605G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A ITO220AC	Active	Standard	400V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SR1502 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 15A R-6	Active	Schottky	20V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1503 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 15A R-6	Active	Schottky	30V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1504 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 15A R-6	Active	Schottky	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1502 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 15A R-6	Active	Schottky	20V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1503 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 15A R-6	Active	Schottky	30V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1504 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 15A R-6	Active	Schottky	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SFAF2003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A ITO220AC	Active	Standard	150V	20A	975mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF2004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A ITO220AC	Active	Standard	200V	20A	975mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UGA8120HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 8A TO220AC	Active	Standard	-	8A	2.8V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SR1502 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 15A R-6	Active	Schottky	20V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1503 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 15A R-6	Active	Schottky	30V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1504 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 15A R-6	Active	Schottky	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
MUR860HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A TO220AC	Active	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
MBRS1635 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 35V 16A TO263AB	Active	Schottky	35V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 35V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1645 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 16A TO263AB	Active	Schottky	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 45V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1650 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 16A TO263AB	Active	Schottky	50V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1660 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 16A TO263AB	Active	Schottky	60V	16A	750mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SK15H45 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 15A R-6	Active	Schottky	45V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 45V	-	Through Hole	R6, Axial	R-6	200°C (Max)
SRAS20150 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO263AB	Active	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAF2005GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A ITO220AC	Active	Standard	300V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF2006GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A ITO220AC	Active	Standard	400V	20A	1.3V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SF2001PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO247AD	Active	Standard	50V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2002PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO247AD	Active	Standard	100V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SRAS20150HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO263AB	Active	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF2005G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO220AB	Active	Standard	300V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFAF2007GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A ITO220AC	Active	Standard	500V	20A	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF2008GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A ITO220AC	Active	Standard	600V	20A	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SF1601PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 16A TO247AD	Active	Standard	50V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1602PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 16A TO247AD	Active	Standard	100V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1603PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 16A TO247AD	Active	Standard	150V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1604PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A TO247AD	Active	Standard	200V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1605PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A TO247AD	Active	Standard	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1606PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO247AD	Active	Standard	400V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1607PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A TO247AD	Active	Standard	500V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1608PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO247AD	Active	Standard	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
UG12JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A TO220AC	Active	Standard	600V	12A	2V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UGF12JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A ITO220AC	Active	Standard	600V	12A	2V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SR1502HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 15A R-6	Active	Schottky	20V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1503HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 15A R-6	Active	Schottky	30V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1504HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 15A R-6	Active	Schottky	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1502HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 15A R-6	Active	Schottky	20V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1503HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 15A R-6	Active	Schottky	30V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1504HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 15A R-6	Active	Schottky	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SRA20100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 20A TO220AC	Active	Schottky	100V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SR1502HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 15A R-6	Active	Schottky	20V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1503HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 15A R-6	Active	Schottky	30V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
SR1504HB0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 15A R-6	Active	Schottky	40V	15A	550mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	R6, Axial	R-6	-50°C ~ 150°C
UGF12JDHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 12A ITO220AC	Active	Standard	600V	12A	3.1V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	500nA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 175°C

Hersteller für Dioden - Gleichrichter - Einzeln