Taiwan Semiconductor Distributor - Dioden - Gleichrichter - Einzeln - SFF1605G C0G MBRS10150HMNG - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Dioden-Typ	Spannung - DC Reverse (Vr) (Max)	Strom - Durchschnittlich gleichgerichtet (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Wiederherstellungszeit (trr)	Strom - Rückwärtsleckage @ Vr	Kapazität @ Vr, F	Befestigungsart	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Kreuzung
SFF1605G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A ITO220AB	Active	Standard	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
MBRS10150HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 10A TO263AB	Active	Schottky	150V	10A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 175°C
MBRS16150 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 16A TO263AB	Active	Schottky	150V	16A	950mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAF1604GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A ITO220AC	Active	Standard	200V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	130pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRA2090 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 20A TO220AC	Active	Schottky	90V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRAF10150HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 10A ITO220AC	Active	Schottky	150V	10A	950mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1606G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A ITO220AC	Active	Standard	400V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRS16100HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 16A TO263AB	Active	Schottky	100V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1690HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 16A TO263AB	Active	Schottky	90V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF1607GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A TO220AB	Active	Standard	500V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFF2001G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A ITO220AB	Active	Standard	50V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2002G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A ITO220AB	Active	Standard	100V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2003G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A ITO220AB	Active	Standard	150V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2004G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A ITO220AB	Active	Standard	200V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2005G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A ITO220AB	Active	Standard	300V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFS1607G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A TO263AB	Active	Standard	500V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1608G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO263AB	Active	Standard	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAS1008GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO263AB	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF1608GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO220AB	Active	Standard	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFAF1605GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A ITO220AC	Active	Standard	300V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1606GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A ITO220AC	Active	Standard	400V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRA1650 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 16A TO220AC	Active	Schottky	50V	16A	700mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRAF16100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 16A ITO220AC	Active	Schottky	100V	16A	920mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF1660 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 16A ITO220AC	Active	Schottky	60V	16A	700mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1607G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A ITO220AC	Active	Standard	500V	16A	1.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF1607G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A ITO220AB	Active	Standard	500V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2006G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A ITO220AB	Active	Standard	400V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
UGF8JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	Active	Standard	600V	8A	2.9V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRS16150HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 16A TO263AB	Active	Schottky	150V	16A	950mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRA1660 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 16A TO220AC	Active	Schottky	60V	16A	700mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRAF1690 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 16A ITO220AC	Active	Schottky	90V	16A	920mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1608G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A ITO220AC	Active	Standard	600V	16A	1.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF1608G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A ITO220AB	Active	Standard	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2007G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A ITO220AB	Active	Standard	500V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
P2500MHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 25A P2500	Active	Standard	-	25A	870mV @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	-	Through Hole	DO-201AD, Axial	P2500	-50°C ~ 175°C
SFF1605GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A ITO220AB	Active	Standard	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2001GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A ITO220AB	Active	Standard	50V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2002GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A ITO220AB	Active	Standard	100V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A ITO220AB	Active	Standard	150V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A ITO220AB	Active	Standard	200V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF2005GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A ITO220AB	Active	Standard	300V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA2020HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 20A TO220AC	Active	Schottky	20V	20A	550mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA2030HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 20A TO220AC	Active	Schottky	30V	20A	550mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA2040HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 20A TO220AC	Active	Schottky	40V	20A	550mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA2050HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 20A TO220AC	Active	Schottky	50V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRA2060HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO220AC	Active	Schottky	60V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
UGF8JD C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	Active	Standard	600V	8A	2.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF2008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A ITO220AB	Active	Standard	600V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	90pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFAF1607GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A ITO220AC	Active	Standard	500V	16A	1.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1608GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A ITO220AC	Active	Standard	600V	16A	1.7V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C

Hersteller für Dioden - Gleichrichter - Einzeln