Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusDioden-TypSpannung - DC Reverse (Vr) (Max)Strom - Durchschnittlich gleichgerichtet (Io)Spannung - Vorwärts (Vf) (Max) @ IfGeschwindigkeitReverse Wiederherstellungszeit (trr)Strom - Rückwärtsleckage @ VrKapazität @ Vr, FBefestigungsartPaket / FallLieferantengerätepaketBetriebstemperatur - Kreuzung
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 16A TO220AC ActiveSchottky90V16A920mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 20A ITO220AC ActiveStandard50V20A975mV @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 20A ITO220AC ActiveStandard100V20A975mV @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 16A ITO220AC ActiveSchottky100V16A850mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 16A ITO220AC ActiveSchottky150V16A950mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 16A ITO220AB ActiveStandard400V16A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 16A TO220AC ActiveSchottky100V16A920mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 20A TO220AC ActiveSchottky90V20A920mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 20A ITO220AC ActiveStandard150V20A975mV @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 20A ITO220AC ActiveStandard200V20A975mV @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 16A TO263AB ActiveStandard500V16A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V60pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A TO263AB ActiveStandard600V16A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V60pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 16A ITO220AB ActiveStandard500V16A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 16A ITO220AB ActiveStandard600V16A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 20A ITO220AB ActiveStandard400V20A1.3V @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V90pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 20A ITO220AB ActiveStandard500V20A1.7V @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V90pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 16A TO220AC ActiveSchottky50V16A700mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 16A ITO220AC ActiveSchottky100V16A920mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 16A ITO220AC ActiveSchottky60V16A700mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 16A ITO220AC ActiveSchottky90V16A920mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 8A TO220AC ActiveStandard
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8A2.8V @ 8AFast Recovery =< 500ns, > 200mA (Io)70ns5µA @ 1200V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 20A ITO220AC ActiveStandard300V20A1.3V @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V150pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 20A ITO220AC ActiveStandard400V20A1.3V @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V150pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AC ActiveStandard200V8A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns5µA @ 200V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A R-6 ActiveSchottky45V20A550mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 45V
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Through HoleR6, AxialR-6200°C (Max)
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A R-6 ActiveSchottky45V20A550mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 45V
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Through HoleR6, AxialR-6200°C (Max)
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A R-6 ActiveSchottky45V20A550mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 45V
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Through HoleR6, AxialR-6200°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 20A ITO220AC ActiveStandard500V20A1.7V @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V150pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A ITO220AC ActiveStandard600V20A1.7V @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V150pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 20A ITO220AB ActiveStandard600V20A1.7V @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V90pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 16A TO220AC ActiveSchottky60V16A700mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC ActiveStandard600V8A2.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 600V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 35V 16A ITO220AC ActiveSchottky35V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 35V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 16A ITO220AC ActiveSchottky45V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 16A ITO220AC ActiveSchottky50V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 16A ITO220AC ActiveSchottky60V16A750mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 16A ITO220AC ActiveSchottky90V16A850mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 90V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 16A ITO220AC ActiveSchottky45V16A630mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 45V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A R-6 ActiveSchottky45V15A560mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 45V
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Through HoleR6, AxialR-6200°C (Max)
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A R-6 ActiveSchottky45V15A560mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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150µA @ 45V
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Through HoleR6, AxialR-6200°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 20A ITO220AC ActiveStandard50V20A975mV @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 20A ITO220AC ActiveStandard100V20A975mV @ 20AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 16A TO220AC ActiveSchottky100V16A920mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 16A TO220AC ActiveSchottky90V16A920mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 12A ITO220AC ActiveStandard600V12A3.1V @ 12AFast Recovery =< 500ns, > 200mA (Io)45ns500nA @ 600V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 12A TO220AC ActiveStandard600V12A2V @ 12AFast Recovery =< 500ns, > 200mA (Io)20ns5µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 12A ITO220AC ActiveStandard600V12A2V @ 12AFast Recovery =< 500ns, > 200mA (Io)20ns5µA @ 600V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A ITO220AC ActiveStandard50V16A1V @ 16AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 50V150pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A ITO220AC ActiveStandard100V16A1V @ 16AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 100V150pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 16A ITO220AC ActiveStandard200V16A1V @ 16AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 200V150pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C