Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusDioden-TypSpannung - DC Reverse (Vr) (Max)Strom - Durchschnittlich gleichgerichtet (Io)Spannung - Vorwärts (Vf) (Max) @ IfGeschwindigkeitReverse Wiederherstellungszeit (trr)Strom - Rückwärtsleckage @ VrKapazität @ Vr, FBefestigungsartPaket / FallLieferantengerätepaketBetriebstemperatur - Kreuzung
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 10A ITO220AC ActiveSchottky20V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 10A ITO220AC ActiveSchottky30V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 30V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 10A ITO220AC ActiveSchottky40V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 10A ITO220AC ActiveSchottky50V10A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A ITO220AC ActiveSchottky60V10A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 5A ITO220AC ActiveSchottky150V5A950mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 8A ITO220AC ActiveSchottky20V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 20V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 8A ITO220AC ActiveSchottky30V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 8A ITO220AC ActiveSchottky40V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 40V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A2.9V @ 8AFast Recovery =< 500ns, > 200mA (Io)25ns30µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 8A DO201AD ActiveSchottky150V8A1.02V @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A ITO220AC ActiveStandard600V5A2.8V @ 5AFast Recovery =< 500ns, > 200mA (Io)25ns30µA @ 600V30pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A TO220AB ActiveStandard100V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V80pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A ITO220AB ActiveStandard200V10A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 8A DO214AB ActiveSchottky100V8A900mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)65ns5µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 16A TO220AC ActiveSchottky100V16A850mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 100V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 16A TO220AC ActiveSchottky150V16A950mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 5A ITO220AC ActiveStandard500V5A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 5A ITO220AC ActiveStandard150V5A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 5A ITO220AC ActiveStandard200V5A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A ITO220AB ActiveStandard600V5A1.7V @ 2.5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 7.5A TO220AC ActiveSchottky150V7.5A950mV @ 7.5AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A ITO220AC ActiveSchottky100V10A850mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 16A TO220AB ActiveStandard150V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V80pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 10A ITO220AB ActiveStandard300V10A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 10A ITO220AC ActiveStandard50V10A975mV @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 10A ITO220AC ActiveStandard100V10A975mV @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 10A ITO220AC ActiveStandard150V10A975mV @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V170pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 8A TO263AB ActiveSchottky20V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 20V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 8A TO263AB ActiveSchottky30V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 8A TO263AB ActiveSchottky40V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 40V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A TO263AB ActiveSchottky50V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 50V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 8A TO263AB ActiveSchottky60V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 60V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 8A TO220AC ActiveStandard500V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V60pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 8A ITO220AC ActiveStandard300V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V60pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 8A ITO220AC ActiveStandard400V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V60pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 8A ITO220AC ActiveStandard500V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V60pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A ITO220AC ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V60pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A TO220AC ActiveStandard600V5A3V @ 5AFast Recovery =< 500ns, > 200mA (Io)20ns30µA @ 600V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 60V 25A 8PDFN ActiveStandard60V25A630mV @ 25AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface Mount8-PowerTDFN8-PDFN (5x6)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 16A TO220AC ActiveSchottky90V16A850mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 90V
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Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A TO220AB ActiveStandard50V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V80pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 8A TO220AB ActiveStandard500V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 500V50pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AB ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 8A TO220AC ActiveStandard200V8A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V100pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 5A ITO220AC ActiveStandard300V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 5A ITO220AC ActiveStandard400V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V70pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 10A ITO220AB ActiveStandard100V10A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 10A ITO220AB ActiveStandard100V10A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V70pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C