Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusDioden-TypSpannung - DC Reverse (Vr) (Max)Strom - Durchschnittlich gleichgerichtet (Io)Spannung - Vorwärts (Vf) (Max) @ IfGeschwindigkeitReverse Wiederherstellungszeit (trr)Strom - Rückwärtsleckage @ VrKapazität @ Vr, FBefestigungsartPaket / FallLieferantengerätepaketBetriebstemperatur - Kreuzung
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 10A TO263AB ActiveStandard200V10A975mV @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 200V70pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 10A TO263AB ActiveStandard300V10A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 300V50pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 10A TO263AB ActiveStandard400V10A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 400V50pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 500V 10A TO263AB ActiveStandard500V10A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 500V50pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A TO263AB ActiveStandard600V10A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns1µA @ 600V50pF @ 4V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 8A TO220AC ActiveStandard300V8A1.3V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V60pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 16A ITO220AC ActiveSchottky40V16A550mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 16A ITO220AC ActiveSchottky50V16A700mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 50V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 20A ITO220AC ActiveSchottky100V20A950mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 35V 20A ITO220AC ActiveSchottky35V20A750mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 35V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A ITO220AC ActiveSchottky45V20A750mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 45V
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Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 20A ITO220AC ActiveSchottky50V20A820mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 50V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 20A ITO220AC ActiveSchottky60V20A820mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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200µA @ 60V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 20A ITO220AC ActiveSchottky90V20A950mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A ITO220AC ActiveStandard100V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V130pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 8A ITO220AC ActiveSchottky30V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 30V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 8A ITO220AC ActiveSchottky40V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 40V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A ITO220AB ActiveStandard600V10A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 35V 7.5A TO220AC ActiveSchottky35V7.5A840mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 35V
-
Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 7.5A TO220AC ActiveSchottky50V7.5A840mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 50V
-
Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 15A SMPC4.0 ActiveSchottky100V15A700mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
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250µA @ 100V
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Surface MountTO-277, 3-PowerDFNSMPC4.0-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A TO220AB ActiveStandard100V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V80pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 16A ITO220AC ActiveStandard150V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V130pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 16A TO220AB ActiveStandard200V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V80pF @ 4V, 1MHzThrough HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 10A ITO220AC ActiveStandard300V10A1.3V @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 300V140pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A ITO220AB ActiveStandard50V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V80pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 100V 16A ITO220AB ActiveStandard100V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 100V80pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 150V 16A ITO220AB ActiveStandard150V16A975mV @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 150V80pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A TO263AB ActiveSchottky100V10A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
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Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 20A TO263AB ActiveSchottky100V20A920mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 100V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 20A TO263AB ActiveSchottky20V20A570mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 20A TO263AB ActiveSchottky30V20A570mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 20A TO263AB ActiveSchottky40V20A570mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 20A TO263AB ActiveSchottky50V20A700mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 20A TO263AB ActiveSchottky60V20A700mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 90V 20A TO263AB ActiveSchottky90V20A920mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V60pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 50V 16A ITO220AC ActiveStandard50V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 50V130pF @ 4V, 1MHzThrough HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 10A ITO220AB ActiveStandard400V10A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 10A ITO220AB ActiveStandard400V10A1.3V @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 400V50pF @ 0V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 10A TO220AC ActiveSchottky150V10A950mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 16A TO220AC ActiveSchottky20V16A550mV @ 16AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through HoleTO-220-2TO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 10A ITO220AC ActiveSchottky150V10A950mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 20V 10A ITO220AC ActiveSchottky20V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 30V 10A ITO220AC ActiveSchottky30V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 40V 10A ITO220AC ActiveSchottky40V10A550mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 10A ITO220AC ActiveSchottky50V10A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A ITO220AC ActiveSchottky60V10A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 8A ITO220AC ActiveSchottky150V8A550mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 150V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 125°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 50V 8A ITO220AC ActiveSchottky50V8A700mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Through HoleTO-220-2 Full PackITO-220AC-55°C ~ 150°C