Taiwan Semiconductor Distributor - Dioden - Gleichrichter - Einzeln - SF1607G C0G SRAS8100 MNG - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Dioden-Typ	Spannung - DC Reverse (Vr) (Max)	Strom - Durchschnittlich gleichgerichtet (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Wiederherstellungszeit (trr)	Strom - Rückwärtsleckage @ Vr	Kapazität @ Vr, F	Befestigungsart	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Kreuzung
SF1607G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A TO220AB	Active	Standard	500V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SRAS8100 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A TO263AB	Active	Schottky	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS8150 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A TO263AB	Active	Schottky	150V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS890 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A TO263AB	Active	Schottky	90V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
P2500M A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 25A P2500	Active	Standard	-	25A	870mV @ 5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	-	Through Hole	DO-201AD, Axial	P2500	-50°C ~ 175°C
SFAF1006GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A ITO220AC	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF1008GAHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AB	Active	Standard	600V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1008GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AB	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 0V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1601GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 16A ITO220AB	Active	Standard	50V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	80pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1602GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 16A ITO220AB	Active	Standard	100V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1603GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 16A ITO220AB	Active	Standard	150V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	80pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1604GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A ITO220AB	Active	Standard	200V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	80pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA10150HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 10A TO220AC	Active	Schottky	150V	10A	950mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRAF10100HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A ITO220AC	Active	Schottky	100V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF1090HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 10A ITO220AC	Active	Schottky	90V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF8150HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A ITO220AC	Active	Schottky	150V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SF1608G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO220AB	Active	Standard	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SFAF1604G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A ITO220AC	Active	Standard	200V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	130pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRS16100 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 16A TO263AB	Active	Schottky	100V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRS1690 MNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 16A TO263AB	Active	Schottky	90V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFAF1007GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A ITO220AC	Active	Standard	500V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1008GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AC	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	140pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRA2020 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 20A TO220AC	Active	Schottky	20V	20A	550mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA2030 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 20A TO220AC	Active	Schottky	30V	20A	550mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA2040 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 20A TO220AC	Active	Schottky	40V	20A	550mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA2050 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 20A TO220AC	Active	Schottky	50V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRA2060 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 20A TO220AC	Active	Schottky	60V	20A	700mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFS1601GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 16A TO263AB	Active	Standard	50V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1602GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 16A TO263AB	Active	Standard	100V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1603GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 16A TO263AB	Active	Standard	150V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1604GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A TO263AB	Active	Standard	200V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1605GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A TO263AB	Active	Standard	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1606GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO263AB	Active	Standard	400V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS8100HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A TO263AB	Active	Schottky	100V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS8150HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A TO263AB	Active	Schottky	150V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SRAS890HMNG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A TO263AB	Active	Schottky	90V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
MBRF16100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 16A ITO220AC	Active	Schottky	100V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
MBRF16150 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 16A ITO220AC	Active	Schottky	150V	16A	950mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SF1606GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO220AB	Active	Standard	400V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2001GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO220AB	Active	Standard	50V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2002GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO220AB	Active	Standard	100V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO220AB	Active	Standard	150V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO220AB	Active	Standard	200V	20A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2005GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO220AB	Active	Standard	300V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2006GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO220AB	Active	Standard	400V	20A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2007GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO220AB	Active	Standard	500V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SF2008GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO220AB	Active	Standard	600V	20A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	80pF @ 4V, 1MHz	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
SRAF890HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A ITO220AC	Active	Schottky	90V	8A	850mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
UGF10J C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A ITO220AC	Active	Standard	600V	10A	2V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1605G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A ITO220AC	Active	Standard	300V	16A	1.3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	100pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C

Hersteller für Dioden - Gleichrichter - Einzeln