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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 16A ITO220AC |
Active | Standard | 300V | 16A | 1V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A ITO220AC |
Active | Standard | 400V | 16A | 1.3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 15A R-6 |
Active | Schottky | 20V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 15A R-6 |
Active | Schottky | 30V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 15A R-6 |
Active | Schottky | 40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 15A R-6 |
Active | Schottky | 20V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 15A R-6 |
Active | Schottky | 30V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 15A R-6 |
Active | Schottky | 40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A ITO220AC |
Active | Standard | 150V | 20A | 975mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 170pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A ITO220AC |
Active | Standard | 200V | 20A | 975mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 8A TO220AC |
Active | Standard | - | 8A | 2.8V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 5µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 15A R-6 |
Active | Schottky | 20V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 15A R-6 |
Active | Schottky | 30V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 15A R-6 |
Active | Schottky | 40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
Active | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 35V 16A TO263AB |
Active | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 35V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 16A TO263AB |
Active | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 16A TO263AB |
Active | Schottky | 50V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 16A TO263AB |
Active | Schottky | 60V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 15A R-6 |
Active | Schottky | 45V | 15A | 560mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 45V | - | Through Hole | R6, Axial | R-6 | 200°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 20A TO263AB |
Active | Schottky | 150V | 20A | 1.02V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A ITO220AC |
Active | Standard | 300V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A ITO220AC |
Active | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 20A TO247AD |
Active | Standard | 50V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 20A TO247AD |
Active | Standard | 100V | 20A | 1.1V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 175pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 20A TO263AB |
Active | Schottky | 150V | 20A | 1.02V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A TO220AB |
Active | Standard | 300V | 20A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A ITO220AC |
Active | Standard | 500V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A ITO220AC |
Active | Standard | 600V | 20A | 1.7V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 150pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 16A TO247AD |
Active | Standard | 50V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 16A TO247AD |
Active | Standard | 100V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 16A TO247AD |
Active | Standard | 150V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A TO247AD |
Active | Standard | 200V | 16A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 16A TO247AD |
Active | Standard | 300V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A TO247AD |
Active | Standard | 400V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 16A TO247AD |
Active | Standard | 500V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 16A TO247AD |
Active | Standard | 600V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 85pF @ 4V, 1MHz | Through Hole | TO-247-3 | TO-247AD (TO-3P) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A TO220AC |
Active | Standard | 600V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A ITO220AC |
Active | Standard | 600V | 12A | 2V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 15A R-6 |
Active | Schottky | 20V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 15A R-6 |
Active | Schottky | 30V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 15A R-6 |
Active | Schottky | 40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 15A R-6 |
Active | Schottky | 20V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 15A R-6 |
Active | Schottky | 30V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 15A R-6 |
Active | Schottky | 40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 20A TO220AC |
Active | Schottky | 100V | 20A | 920mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 15A R-6 |
Active | Schottky | 20V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 15A R-6 |
Active | Schottky | 30V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 15A R-6 |
Active | Schottky | 40V | 15A | 550mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | R6, Axial | R-6 | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 12A ITO220AC |
Active | Standard | 600V | 12A | 3.1V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 500nA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 175°C |