Taiwan Semiconductor Distributor - Dioden - Gleichrichter - Einzeln - SRA20150 C0G SF2003PT C0G - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Dioden-Typ	Spannung - DC Reverse (Vr) (Max)	Strom - Durchschnittlich gleichgerichtet (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Wiederherstellungszeit (trr)	Strom - Rückwärtsleckage @ Vr	Kapazität @ Vr, F	Befestigungsart	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Kreuzung
SRA20150 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO220AC	Active	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SF2003PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO247AD	Active	Standard	150V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2001PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 20A TO247AD	Active	Standard	50V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2002PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 20A TO247AD	Active	Standard	100V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SFAF1601G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 16A ITO220AC	Active	Standard	50V	16A	975mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	130pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SF1601PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 16A TO247AD	Active	Standard	50V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1602PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 16A TO247AD	Active	Standard	100V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1603PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 16A TO247AD	Active	Standard	150V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1604PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A TO247AD	Active	Standard	200V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1605PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A TO247AD	Active	Standard	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1606PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO247AD	Active	Standard	400V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1607PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 16A TO247AD	Active	Standard	500V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF1608PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 16A TO247AD	Active	Standard	600V	16A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	85pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SFS1601G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 16A TO263AB	Active	Standard	50V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1602G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 16A TO263AB	Active	Standard	100V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1603G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 16A TO263AB	Active	Standard	150V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1604G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 16A TO263AB	Active	Standard	200V	16A	975mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	80pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF2004PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO247AD	Active	Standard	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO247AD	Active	Standard	300V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SRA20100HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 20A TO220AC	Active	Schottky	100V	20A	920mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFS1605G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 16A TO263AB	Active	Standard	300V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1606G MNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 16A TO263AB	Active	Standard	400V	16A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SF2003PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 20A TO247AD	Active	Standard	150V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2006PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO247AD	Active	Standard	400V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2007PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO247AD	Active	Standard	500V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SRA20150HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 20A TO220AC	Active	Schottky	150V	20A	1.02V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
TSF20H100C-S C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A ITO220AB	Active	Schottky	100V	10A	790mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 100V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SF2008PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD	Active	Standard	600V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2004PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 20A TO247AD	Active	Standard	200V	20A	1.1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2005PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 20A TO247AD	Active	Standard	300V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
TSF20H120C-S C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 10A ITO220AB	Active	Schottky	120V	10A	860mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 120V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SF2006PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 20A TO247AD	Active	Standard	400V	20A	1.5V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF2007PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 20A TO247AD	Active	Standard	500V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
TSF20H150C-S C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 10A ITO220AB	Active	Schottky	150V	10A	920mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SF2008PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 20A TO247AD	Active	Standard	600V	20A	1.9V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SRF10200 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY STANDARD 10A	Active	Schottky	200V	10A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRF10200HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY STANDARD 10A	Active	Schottky	200V	10A	1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 200V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
UGA15120 C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A TO220AC	Active	Standard	-	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF3001PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 30A TO247AD	Active	Standard	50V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3002PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 30A TO247AD	Active	Standard	100V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3003PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 30A TO247AD	Active	Standard	150V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3005PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 30A TO247AD	Active	Standard	300V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3006PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 30A TO247AD	Active	Standard	400V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
UGA15120HC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 15A TO220AC	Active	Standard	-	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	5µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
SF3001PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 30A TO247AD	Active	Standard	50V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3002PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 30A TO247AD	Active	Standard	100V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3003PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 30A TO247AD	Active	Standard	150V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3004PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 30A TO247AD	Active	Standard	200V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3005PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 30A TO247AD	Active	Standard	300V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
SF3006PTHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 30A TO247AD	Active	Standard	400V	30A	1.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C

Hersteller für Dioden - Gleichrichter - Einzeln