Taiwan Semiconductor Distributor - Dioden - Gleichrichter - Einzeln - SFF1003GAHC0G SFF1003GHC0G - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Dioden-Typ	Spannung - DC Reverse (Vr) (Max)	Strom - Durchschnittlich gleichgerichtet (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Wiederherstellungszeit (trr)	Strom - Rückwärtsleckage @ Vr	Kapazität @ Vr, F	Befestigungsart	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Kreuzung
SFF1003GAHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A ITO220AB	Active	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A ITO220AB	Active	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA1060HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 10A TO220AC	Active	Schottky	60V	10A	700mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRA1620 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 16A TO220AC	Active	Schottky	20V	16A	550mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA1630 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 16A TO220AC	Active	Schottky	30V	16A	550mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA8100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A TO220AC	Active	Schottky	100V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRA850HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A TO220AC	Active	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRA860HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A TO220AC	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRA890 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 8A TO220AC	Active	Schottky	90V	8A	850mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRAF1620 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 16A ITO220AC	Active	Schottky	20V	16A	550mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SRAF1630 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 16A ITO220AC	Active	Schottky	30V	16A	550mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SRAF850 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 8A ITO220AC	Active	Schottky	50V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SK12H45 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 45V 12A DO201AD	Active	Schottky	45V	12A	550mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 45V	-	Through Hole	DO-201AD, Axial	DO-201AD	200°C (Max)
SK12H60 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 12A DO201AD	Active	Schottky	60V	12A	700mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	120µA @ 60V	-	Through Hole	DO-201AD, Axial	DO-201AD	200°C (Max)
SFA1004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A TO220AC	Active	Standard	200V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1005GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A TO220AC	Active	Standard	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1006GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 10A TO220AC	Active	Standard	400V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1007G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A TO220AC	Active	Standard	500V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA1008G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 10A TO220AC	Active	Standard	600V	10A	1.7V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	50pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA806GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A TO220AC	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFA807GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A TO220AC	Active	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SFAF1001GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A ITO220AC	Active	Standard	50V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 50V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1002GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A ITO220AC	Active	Standard	100V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1003GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A ITO220AC	Active	Standard	150V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF507GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 5A ITO220AC	Active	Standard	500V	5A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF508GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A ITO220AC	Active	Standard	600V	5A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	70pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF805GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 8A ITO220AC	Active	Standard	300V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF806GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 8A ITO220AC	Active	Standard	400V	8A	1.3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 400V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF807GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 8A ITO220AC	Active	Standard	500V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF808GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 8A ITO220AC	Active	Standard	600V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	60pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFF1004GAHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A ITO220AB	Active	Standard	200V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1004GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A ITO220AB	Active	Standard	200V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	70pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1005GAHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A ITO220AB	Active	Standard	300V	10A	1.3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1005GHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 10A ITO220AB	Active	Standard	300V	10A	1.3V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 300V	50pF @ 0V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SRA10100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A TO220AC	Active	Schottky	100V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRA1090 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 10A TO220AC	Active	Schottky	90V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
SRA8150 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 8A TO220AC	Active	Schottky	150V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SRAF10100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 10A ITO220AC	Active	Schottky	100V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF1090 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 10A ITO220AC	Active	Schottky	90V	10A	850mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF8100 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 8A ITO220AC	Active	Schottky	100V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SRAF820HC0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 8A ITO220AC	Active	Schottky	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SRA1640 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 16A TO220AC	Active	Schottky	40V	16A	550mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
SFF1007G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A ITO220AB	Active	Standard	500V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 0V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
SFF1007GA C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 10A ITO220AB	Active	Standard	500V	10A	1.7V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 500V	50pF @ 4V, 1MHz	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-55°C ~ 150°C
UGF5JHC0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 5A ITO220AC	Active	Standard	600V	5A	3V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	30µA @ 600V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SRAF860 C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 8A ITO220AC	Active	Schottky	60V	8A	700mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFAF1004G C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 10A ITO220AC	Active	Standard	200V	10A	975mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	170pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SFS1001GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 10A TO263AB	Active	Standard	50V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 50V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1002GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 10A TO263AB	Active	Standard	100V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 100V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C
SFS1003GHMNG	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 10A TO263AB	Active	Standard	150V	10A	975mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	1µA @ 150V	70pF @ 4V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	TO-263AB (D²PAK)	-55°C ~ 150°C

Hersteller für Dioden - Gleichrichter - Einzeln