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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 16A TO220AB |
Active | Standard | 500V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 60pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A TO263AB |
Active | Schottky | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A TO263AB |
Active | Schottky | 150V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 8A TO263AB |
Active | Schottky | 90V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1000V 25A P2500 |
Active | Standard | - | 25A | 870mV @ 5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | P2500 | -50°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 10A ITO220AC |
Active | Standard | 400V | 10A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 140pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
Active | Standard | 600V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
Active | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 0V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 16A ITO220AB |
Active | Standard | 50V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 16A ITO220AB |
Active | Standard | 100V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 16A ITO220AB |
Active | Standard | 150V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A ITO220AB |
Active | Standard | 200V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 10A TO220AC |
Active | Schottky | 150V | 10A | 950mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A ITO220AC |
Active | Schottky | 100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 10A ITO220AC |
Active | Schottky | 90V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A ITO220AC |
Active | Schottky | 150V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 150V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 16A TO220AB |
Active | Standard | 600V | 16A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 60pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A ITO220AC |
Active | Standard | 200V | 16A | 975mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 130pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 16A TO263AB |
Active | Schottky | 100V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 16A TO263AB |
Active | Schottky | 90V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 90V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 10A ITO220AC |
Active | Standard | 500V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 140pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AC |
Active | Standard | 600V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 140pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 20A TO220AC |
Active | Schottky | 20V | 20A | 550mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 20A TO220AC |
Active | Schottky | 30V | 20A | 550mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 20A TO220AC |
Active | Schottky | 40V | 20A | 550mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 20A TO220AC |
Active | Schottky | 50V | 20A | 700mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 20A TO220AC |
Active | Schottky | 60V | 20A | 700mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 16A TO263AB |
Active | Standard | 50V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 50V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 16A TO263AB |
Active | Standard | 100V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 16A TO263AB |
Active | Standard | 150V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 16A TO263AB |
Active | Standard | 200V | 16A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 16A TO263AB |
Active | Standard | 300V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A TO263AB |
Active | Standard | 400V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 8A TO263AB |
Active | Schottky | 100V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A TO263AB |
Active | Schottky | 150V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 8A TO263AB |
Active | Schottky | 90V | 8A | 950mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 16A ITO220AC |
Active | Schottky | 100V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 16A ITO220AC |
Active | Schottky | 150V | 16A | 950mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 16A TO220AB |
Active | Standard | 400V | 16A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 60pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 20A TO220AB |
Active | Standard | 50V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 20A TO220AB |
Active | Standard | 100V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 20A TO220AB |
Active | Standard | 150V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 150V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 20A TO220AB |
Active | Standard | 200V | 20A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 20A TO220AB |
Active | Standard | 300V | 20A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 20A TO220AB |
Active | Standard | 400V | 20A | 1.3V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 20A TO220AB |
Active | Standard | 500V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 500V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 20A TO220AB |
Active | Standard | 600V | 20A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 80pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 8A ITO220AC |
Active | Schottky | 90V | 8A | 850mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 90V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AC |
Active | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 16A ITO220AC |
Active | Standard | 300V | 16A | 1.3V @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 100pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |