Microsemi Distributor - Diodes - Rectifiers - Single - UES1102SM SBR6030L - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
UES1102SM	Microsemi Corporation	DIODE GEN PURP 100V 2.5A A-MELF	Active	Standard	100V	2.5A	-	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	3.5pF @ 6V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	150°C (Max)
SBR6030L	Microsemi Corporation	DIODE SCHOTTKY 30V 60A DO203AB	Active	Schottky	30V	60A (DC)	480mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 150°C
APT30DQ60KG	Microsemi Corporation	DIODE GEN PURP 600V 30A TO220	Active	Standard	600V	30A	2.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	25µA @ 600V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
APT15DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 15A TO247	Active	Standard	600V	15A	2.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	19ns	25µA @ 600V	-	Through Hole	TO-247-3	TO-247 [B]	-55°C ~ 175°C
1N914UR	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO213AA	Active	Standard	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N5417	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	Axial	B, Axial	-65°C ~ 175°C
MSC010SDA120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 10A TO247	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-247-2	TO-247	-
5819SMJE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 1A DO214AA	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 150°C
UPS360E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 60V 3A POWERMITE3	Active	Schottky	60V	3A	630mV @ 3.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	130pF @ 4V, 1MHz	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
JAN1N914	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35	Active	Standard	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	2.8pF @ 1.5V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
UFS180JE3/TR13	Microsemi Corporation	DIODE GEN PURP 800V 1A DO214BA	Active	Standard	800V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	20µA @ 800V	-	Surface Mount	DO-214BA	DO-214BA	-55°C ~ 175°C
1N4608	Microsemi Corporation	DIODE GEN PURP 85V 200MA DO35	Active	Standard	85V	200mA	1.1V @ 400mA	Small Signal =< 200mA (Io), Any Speed	10ns	100µA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
HSM8100JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 100V 8A DO214AB	Active	Schottky	100V	8A	780mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
1N4607	Microsemi Corporation	DIODE GEN PURP 85V 200MA DO35	Active	Standard	85V	200mA	1.1V @ 400mA	Small Signal =< 200mA (Io), Any Speed	10ns	100µA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
JANTX1N914UR	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO213AA	Active	Standard	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JAN1N4247	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N3613	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 300V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5806	Microsemi Corporation	DIODE GEN PURP 150V 2.5A AXIAL	Active	Standard	150V	2.5A	975mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5417	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N4248	Microsemi Corporation	DIODE GEN PURP 800V 1A E3	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 800V	-	-	E3	E3	-65°C ~ 175°C
JAN1N5551	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N3957	Microsemi Corporation	DIODE GEN PURP 1KV 1A	Active	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N6643US	Microsemi Corporation	DIODE GEN PURP 125V 300MA D5D	Active	Standard	125V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	50nA @ 20V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
JANTX1N5621	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 800V	20pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5553	Microsemi Corporation	DIODE GEN PURP 800V 5A AXIAL	Active	Standard	800V	5A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N5620	Microsemi Corporation	DIODE GEN PURP 800V 1A	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5417US	Microsemi Corporation	DIODE GEN PURP 200V 3A D5B	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
JANTX1N5802	Microsemi Corporation	DIODE GEN PURP 50V 1A AXIAL	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N5550	Microsemi Corporation	DIODE GEN PURP 200V 5A AXIAL	Active	Standard	200V	5A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6622US	Microsemi Corporation	DIODE GEN PURP 660V 1.2A A-MELF	Active	Standard	660V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N6621US	Microsemi Corporation	DIODE GEN PURP 440V 1.2A A-MELF	Active	Standard	440V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 440V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
JANTX1N3595US	Microsemi Corporation	DIODE GEN PURP 200MA B-MELF	Active	Standard	-	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
JANTXV1N6622	Microsemi Corporation	DIODE GEN PURP 660V 1.2A AXIAL	Discontinued at -	Standard	660V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 660V	-	Through Hole	A, Axial	-	-65°C ~ 150°C
APT30SCD120S	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 99A D3PAK	Obsolete	Silicon Carbide Schottky	1200V	99A (DC)	1.8V @ 30A	No Recovery Time > 500mA (Io)	0ns	600µA @ 1200V	2100pF @ 0V, 1MHz	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3Pak	-55°C ~ 150°C
JANTXV1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
JANTXV1N6628	Microsemi Corporation	DIODE GEN PURP 660V 1.75A AXIAL	Active	Standard	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Through Hole	E, Axial	-	-65°C ~ 150°C
S30760	Microsemi Corporation	DIODE GEN PURP 600V 85A DO5	Active	Standard	600V	85A (DC)	-	Fast Recovery =< 500ns, > 200mA (Io)	-	25µA @ 600V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
S3480	Microsemi Corporation	DIODE GEN PURP 800V 45A DO203AB	Active	Standard	800V	45A	1.15V @ 90A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 800V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
JANTX1N1204A	Microsemi Corporation	DIODE GEN PURP 400V 12A DO203AA	Active	Standard	400V	12A	2.3V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 400V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
1N6080	Microsemi Corporation	DIODE GEN PURP 100V 2A AXIAL	Discontinued at -	Standard	100V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 100V	-	Through Hole	A, Axial	-	-65°C ~ 155°C
1N5824	Microsemi Corporation	DIODE SCHOTTKY 5A 30V TOPHAT	Discontinued at -	Schottky	30V	5A	370mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 30V	-	Through Hole	Axial	Axial	-65°C ~ 125°C
JANTX1N5194	Microsemi Corporation	DIODE GEN PURP 70V 50MA DO35	Active	Standard	70V	50mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 70V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
HS18140	Microsemi Corporation	DIODE SCHOTTKY 40V 180A HALFPAK	Obsolete	Schottky	40V	180A	700mV @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	-	4mA @ 40V	7500pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	HALF-PAK	-
JANTX1N3671A	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA	Active	Standard	800V	12A	2.3V @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 800V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
JANTX1N1190R	Microsemi Corporation	DIODE GEN PURP 600V 35A DO5	Active	Standard	600V	35A	1.4V @ 110A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 600V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 175°C
HU20260	Microsemi Corporation	DIODE GEN PURP 600V 200A HALFPAK	Obsolete	Standard	600V	200A	1.35V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	130ns	50µA @ 600V	-	Chassis Mount	HALF-PAK	HALF-PAK	-
MC5616	Microsemi Corporation	DIODE GEN PURP 3KV 570MA S AXIAL	Active	Standard	3000V	570mA	6V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	300ns	1µA @ 3000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 150°C
JANS1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANS1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Discontinued at -	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500µA @ 400V	35pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C

Manufacturers for Diodes - Rectifiers - Single