Microsemi Distributor - Diodes - Rectifiers - Single - 1N6643US 1N5416US - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
1N6643US	Microsemi Corporation	DIODE GEN PURP 50V 300MA D5B	Active	Standard	50V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	50nA @ 50V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
1N5416US	Microsemi Corporation	DIODE GEN PURP 100V 3A D5B	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
APT30DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 30A TO247	Active	Standard	1000V	30A	3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	295ns	100µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N4938-1	Microsemi Corporation	DIODE GEN PURP 175V 100MA DO35	Active	Standard	175V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5618	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
MSC010SDA120K	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 10A TO220-2	Active	Silicon Carbide Schottky	1200V	10A (DC)	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-2	TO-220-2	-
1N5618US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
1N5804	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL	Active	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5416	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
1N5615US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A B-MELF	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N5550	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N5619US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N5807	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL	Active	Standard	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5809US	Microsemi Corporation	DIODE GEN PURP 100V 3A B-MELF	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N5554	Microsemi Corporation	DIODE GEN PURP 1KV 3A AXIAL	Active	Standard	1000V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5554US	Microsemi Corporation	DIODE GEN PURP 1KV 3A B-MELF	Active	Standard	1000V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
UPS5819E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 1A POWERMITE1	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	60pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 150°C
UPR10E3/TR7	Microsemi Corporation	DIODE GEN PURP 100V 2.5A DO216	Active	Standard	100V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
UPS540E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 5A POWERMITE3	Active	Schottky	40V	5A	540mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	250pF @ 4V, 1MHz	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
UPS340E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 3A POWERMITE3	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	180pF @ 4V, 1MHz	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
UPS560E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 60V 5A POWERMITE3	Active	Schottky	60V	5A	690mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	150pF @ 4V, 1MHz	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
HSM560JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 60V 5A DO214AB	Active	Schottky	60V	5A	650mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 60V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 175°C
LSM345J/TR13	Microsemi Corporation	DIODE SCHOTTKY 45V 3A DO214AB	Active	Schottky	45V	3A	520mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 45V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
JAN1N4150-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35	Active	Standard	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
UPS835L/TR13	Microsemi Corporation	DIODE SCHOTTKY 35V 8A POWERMITE3	Active	Schottky	35V	8A	510mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.4mA @ 35V	-	Surface Mount	Powermite®3	Powermite 3	-55°C ~ 125°C
UPS840/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 8A POWERMITE	Active	Schottky	40V	8A	450mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
1N4454UR-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA	Active	Standard	50V	200mA (DC)	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
JAN1N4454UR-1	Microsemi Corporation	DIODE GEN PURP 50V 4A DO213AA	Active	Standard	50V	4A	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
JANTXV1N4150-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35	Active	Standard	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N4153-1	Microsemi Corporation	DIODE GEN PURP 75V 150MA DO35	Active	Standard	75V	150mA (DC)	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JANTX1N3595-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO35	Active	Standard	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JAN1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTX1N4246	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N3611	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	A-PAK	-65°C ~ 175°C
JANTX1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N4942	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
APT10SCD120K	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 10A TO220	Obsolete	Silicon Carbide Schottky	1200V	10A	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-2	TO-220	-
JANTX1N4153-1	Microsemi Corporation	DIODE GEN PURP 50V 150MA DO204AH	Active	Standard	50V	150mA	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANTX1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5811TR	Microsemi Corporation	DIODE GEN PURP 150V 6A AXIAL	Active	Standard	150V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5416	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C

Manufacturers for Diodes - Rectifiers - Single