Microsemi Distributor - Diodes - Rectifiers - Single - JAN1N5420 JANTX1N5616US - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
JANTX1N5616US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
1N6622	Microsemi Corporation	DIODE GEN PURP 600V 1.2A AXIAL	Active	Standard	600V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	500nA @ 600V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
JANTX1N5806	Microsemi Corporation	DIODE GEN PURP 150V 1A AXIAL	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5614US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N5819UR-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO213AB	Active	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB (MELF, LL41)	-65°C ~ 125°C
JANTXV1N5614US	Microsemi Corporation	DIODE GEN PURP 200V 1A D5A	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JANTX1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 3A B-MELF	Active	Standard	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N5711UR-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO213AA	Active	Schottky	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 100V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
JANTX1N5819-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO204AL	Active	Schottky	45V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
JANTXV1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTXV1N5617	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTX1N5190	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	2µA @ 600V	-	Through Hole	B, Axial	-	-
JANTX1N3644	Microsemi Corporation	DIODE GP 1.5KV 250MA S AXIAL	Active	Standard	1500V	250mA	5V @ 250mA	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 1500V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
JANTX1N6626US	Microsemi Corporation	DIODE GEN PURP 200V 1.75A D5B	Discontinued at -	Standard	200V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	2µA @ 200V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTX1N4500	Microsemi Corporation	DIODE GEN PURP 80V DO35	Active	Standard	80V	-	1.1V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	6ns	100nA @ 75V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JANS1N5806	Microsemi Corporation	DIODE GEN PURP 150V 1A AXIAL	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANS1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANS1N6642	Microsemi Corporation	DIODE GEN PURP 75V 300MA DO204AH	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANS1N6640	Microsemi Corporation	DIODE GEN PURP 50V 300MA DO204AH	Active	Standard	50V	300mA	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANS1N5809	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Discontinued at -	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N486B	Microsemi Corporation	DIODE GEN PURP 225V 200MA DO35	Active	Standard	225V	200mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	-	25nA @ 225V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JANS1N3595US	Microsemi Corporation	DIODE GEN PURP 200MA DO35	Active	Standard	-	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
JANS1N5552	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
APTDF500U40G	Microsemi Corporation	DIODE GEN PURP 400V 500A LP4	Active	Standard	400V	500A	1.5V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	2.5mA @ 400V	-	Chassis Mount	LP4	LP4	-
1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5552	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
APTDF500U20G	Microsemi Corporation	DIODE GEN PURP 200V 500A LP4	Active	Standard	200V	500A	1.1V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	2.5mA @ 200V	-	Chassis Mount	LP4	LP4	-
APTDF400U120G	Microsemi Corporation	DIODE GEN PURP 1.2KV 450A LP4	Active	Standard	1200V	450A	2.5V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	110ns	2.5mA @ 1200V	-	Chassis Mount	LP4	LP4	-
APTDF450U60G	Microsemi Corporation	DIODE GEN PURP 600V 500A LP4	Active	Standard	600V	500A	1.8V @ 500A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	2.5mA @ 600V	-	Chassis Mount	LP4	LP4	-
APT15DQ60KG	Microsemi Corporation	DIODE GEN PURP 600V 15A TO220	Active	Standard	600V	15A	2.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	19ns	25µA @ 600V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
APT15D60KG	Microsemi Corporation	DIODE GEN PURP 600V 15A TO220	Active	Standard	600V	15A	1.8V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	250µA @ 600V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
1N4150-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO35	Active	Standard	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4153-1	Microsemi Corporation	DIODE GEN PURP 50V 150MA DO35	Active	Standard	50V	150mA	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N4150UR-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA	Active	Standard	50V	200mA	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	DO-213AA (Glass)	DO-213AA	-65°C ~ 175°C
1N5553	Microsemi Corporation	DIODE GEN PURP 800V 3A AXIAL	Active	Standard	800V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6640US	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5D	Active	Standard	75V	300mA (DC)	1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
1N3595US	Microsemi Corporation	DIODE GEN PURP 4A B-MELF	Active	Standard	-	4A (DC)	1V @ 200mA	Standard Recovery >500ns, > 200mA (Io)	3µs	1nA @ 125V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
UES1103	Microsemi Corporation	DIODE GEN PURP 150V 2.5A AXIAL	Active	Standard	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Through Hole	A, Axial	-	175°C (Max)
UES1302	Microsemi Corporation	DIODE GEN PURP 100V 6A AXIAL	Active	Standard	100V	6A	925mV @ 6A	Standard Recovery >500ns, > 200mA (Io)	30ns	5µA @ 100V	-	Through Hole	Axial	Axial	-55°C ~ 175°C
1N6392	Microsemi Corporation	DIODE SCHOTTKY 45V 54A DO5	Active	Schottky	45V	54A	820mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	3000pF @ 5V, 1MHz	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 175°C
APT15DQ100BG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO247	Active	Standard	1000V	15A	3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	235ns	100µA @ 1000V	-	Through Hole	TO-247-3	TO-247 [B]	-55°C ~ 175°C
APT30D30BG	Microsemi Corporation	DIODE GEN PURP 300V 30A TO247	Active	Standard	300V	30A	1.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	250µA @ 300V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30D20BG	Microsemi Corporation	DIODE GEN PURP 200V 30A TO247	Active	Standard	200V	30A	1.3V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	250µA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
CDLL5195	Microsemi Corporation	DIODE GEN PURP 180V 200MA DO213	Active	Standard	180V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 180V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N5553US	Microsemi Corporation	DIODE GEN PURP 800V 3A B-MELF	Active	Standard	800V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
UES1002	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL	Active	Standard	100V	1A	975mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	-	Through Hole	A, Axial	-	-55°C ~ 175°C
1N6663US	Microsemi Corporation	DIODE GEN PURP 600V 500MA D5A	Active	Standard	600V	500mA (DC)	1V @ 400mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
UES1104	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Through Hole	A, Axial	-	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single