Microsemi Distributor - Diodes - Rectifiers - Single - JANTX1N6843CCU3 CDS5711UR-1 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JANTX1N6843CCU3	Microsemi Corporation	DIODE SCHOTTKY 100V 15A SMD	Active	Schottky	100V	15A	1.27V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 100V	275pF @ 5V, 1MHz	Surface Mount	3-SMD, Flat Leads	SMD	-65°C ~ 150°C
CDS5711UR-1	Microsemi Corporation	DIODE SCHOTTKY DO-213AA	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N5822	Microsemi Corporation	DIODE SCHOTTKY 40V 3A AXIAL	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	B, Axial	-	-65°C ~ 125°C
JANS1N5819-1	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO41	Active	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 125°C
JANS1N5418	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	165pF @ 4V	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N3289	Microsemi Corporation	DIODE GEN PURP 200V 100A DO205AA	Active	Standard	200V	100A	1.55V @ 310A	Small Signal =< 200mA (Io), Any Speed	-	10mA @ 200V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
JAN1N3174	Microsemi Corporation	DIODE GEN PURP 1KV 300A DO205	Discontinued at -	Standard	1000V	300A	1.55V @ 940A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 1000V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
UPR60E3/TR7	Microsemi Corporation	DIODE GEN PURP 600V 2A POWERMITE	Active	Standard	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 600V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
APT75DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 75A TO247	Active	Standard	1200V	75A	3.1V @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	325ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
UPS120EE3/TR7	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE1	Active	Schottky	20V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	-	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 125°C
UPS140E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 40V 1A POWERMITE1	Active	Schottky	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	70pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 125°C
UPR20E3/TR7	Microsemi Corporation	DIODE GEN PURP 200V 2A POWERMITE	Active	Standard	200V	2A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 200V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
APT30S20BG	Microsemi Corporation	DIODE SCHOTTKY 200V 45A TO247	Active	Schottky	200V	45A	850mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	500µA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
UPR15E3/TR7	Microsemi Corporation	DIODE GEN PURP 150V 2.5A DO216	Active	Standard	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
APT15DQ120KG	Microsemi Corporation	DIODE GEN PURP 1.2KV 15A TO220	Active	Standard	1200V	15A	3.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	240ns	100µA @ 1200V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
APT15D100BG	Microsemi Corporation	DIODE GEN PURP 1KV 15A TO247	Active	Standard	1000V	15A	2.3V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	260ns	250µA @ 1000V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT40DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 40A TO247	Active	Standard	1200V	40A	3.3V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT60D40BG	Microsemi Corporation	DIODE GEN PURP 400V 60A TO247	Active	Standard	400V	60A	1.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	37ns	250µA @ 400V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N5802US	Microsemi Corporation	DIODE GEN PURP 50V 1A D5A	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N5551US	Microsemi Corporation	DIODE GEN PURP 400V 3A D5B	Active	Standard	400V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
1N6628US	Microsemi Corporation	DIODE GEN PURP 660V 1.75A A-MELF	Active	Standard	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
UES1305	Microsemi Corporation	DIODE GEN PURP 300V 3A AXIAL	Active	Standard	300V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 300V	-	Through Hole	B, Axial	-	-55°C ~ 150°C
MSC010SDA070K	Microsemi Corporation	DIODE SCHOTTKY 700V 10A TO220-3	Active	Silicon Carbide Schottky	700V	10A (DC)	1.5V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-3	TO-220-3	-
MSC030SDA070K	Microsemi Corporation	DIODE SCHOTTKY 700V 30A TO220-3	Active	Silicon Carbide Schottky	700V	30A (DC)	1.5V @ 30A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-3	TO-220-3	-
MSC015SDA120B	Microsemi Corporation	DIODE SCHOTTKY 1.2KV 15A TO247	Active	Silicon Carbide Schottky	1200V	15A (DC)	1.5V @ 15A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-247-2	TO-247	-
MSC050SDA070B	Microsemi Corporation	DIODE SCHOTTKY 700V 50A TO247	Active	Silicon Carbide Schottky	700V	50A (DC)	1.5V @ 50A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-247-2	TO-247	-
SMAJ5817E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 20V SMAJ	Active	-	-	-	-	-	-	-	-	-	-	-	-
SMAJ5818E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 30V SMAJ	Active	-	-	-	-	-	-	-	-	-	-	-	-
SMAJ5819E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 40V SMAJ	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS120E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	80pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UPS120EE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE	Active	Schottky	20V	1A	530mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UPS160E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 60V 1A POWERMITE	Active	Schottky	60V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	55pF @ 4V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UPS5817E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	105pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
UPS1100E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 100V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS130LE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 30V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS140E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 1A POWERMITE	Active	Schottky	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 125°C
UPS170E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 70V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS180E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 80V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS190E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 90V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS160E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 60V 1A POWERMITE1	Active	Schottky	60V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	55pF @ 4V, 1MHz	Surface Mount	DO-216AA	Powermite 1 (DO216-AA)	-55°C ~ 125°C
UPS1100E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 1A 100V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS130LE3/TR7	Microsemi Corporation	DIODE SCHOTTKY 1A 30V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS170E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 1A 70V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS180E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 1A 80V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
UPS190E3/TR7	Microsemi Corporation	DIODE SCHOTTKY 1A 90V POWERMITE	Active	-	-	-	-	-	-	-	-	-	-	-	-
5817SMJE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 1A DO214AA	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 150°C
5818SMJE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 30V 1A DO214AA	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA	-55°C ~ 150°C
UPR10E3/TR13	Microsemi Corporation	DIODE GEN PURP 100V 2.5A DO216	Active	Standard	100V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 100V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
UPR15E3/TR13	Microsemi Corporation	DIODE GEN PURP 150V 2.5A DO216	Active	Standard	150V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 150V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C
UPR5E3/TR13	Microsemi Corporation	DIODE GEN PURP 50V 2.5A DO216	Active	Standard	50V	2.5A	975mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	2µA @ 50V	-	Surface Mount	DO-216AA	DO-216	-55°C ~ 150°C

Manufacturers for Diodes - Rectifiers - Single