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Microsemi Corporation |
DIODE GEN PURP 100V 2.5A A-MELF |
Active | Standard | 100V | 2.5A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 2µA @ 100V | 3.5pF @ 6V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | 150°C (Max) |
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Microsemi Corporation |
DIODE SCHOTTKY 30V 60A DO203AB |
Active | Schottky | 30V | 60A (DC) | 480mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 30V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 30A TO220 |
Active | Standard | 600V | 30A | 2.4V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 25µA @ 600V | - | Through Hole | TO-220-2 | TO-220 [K] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 15A TO247 |
Active | Standard | 600V | 15A | 2.4V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 19ns | 25µA @ 600V | - | Through Hole | TO-247-3 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO213AA |
Active | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL |
Active | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | Axial | B, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 10A TO247 |
Active | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247 | - |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 1A DO214AA |
Active | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 60V 3A POWERMITE3 |
Active | Schottky | 60V | 3A | 630mV @ 3.5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 130pF @ 4V, 1MHz | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35 |
Active | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 2.8pF @ 1.5V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A DO214BA |
Active | Standard | 800V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 20µA @ 800V | - | Surface Mount | DO-214BA | DO-214BA | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 85V 200MA DO35 |
Active | Standard | 85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 100V 8A DO214AB |
Active | Schottky | 100V | 8A | 780mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 85V 200MA DO35 |
Active | Standard | 85V | 200mA | 1.1V @ 400mA | Small Signal =< 200mA (Io), Any Speed | 10ns | 100µA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO213AA |
Active | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL |
Active | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL |
Active | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 150V 2.5A AXIAL |
Active | Standard | 150V | 2.5A | 975mV @ 2.5A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 3A AXIAL |
Active | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A E3 |
Active | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 800V | - | - | E3 | E3 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL |
Active | Standard | 400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 1A |
Active | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 125V 300MA D5D |
Active | Standard | 125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A AXIAL |
Active | Standard | 800V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 800V | 20pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 5A AXIAL |
Active | Standard | 800V | 5A | 1.3V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 1A |
Active | Standard | 800V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 800V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 3A D5B |
Active | Standard | 200V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 1A AXIAL |
Active | Standard | 50V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 5A AXIAL |
Active | Standard | 200V | 5A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 200V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 3A AXIAL |
Active | Standard | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 660V 1.2A A-MELF |
Active | Standard | 660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 440V 1.2A A-MELF |
Active | Standard | 440V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 440V | 10pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | A-MELF | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 200MA B-MELF |
Active | Standard | - | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 1nA @ 125V | - | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 660V 1.2A AXIAL |
Discontinued at - | Standard | 660V | 1.2A | 1.4V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 500nA @ 660V | - | Through Hole | A, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE SCHOTTKY 1.2KV 99A D3PAK |
Obsolete | Silicon Carbide Schottky | 1200V | 99A (DC) | 1.8V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 600µA @ 1200V | 2100pF @ 0V, 1MHz | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 3A AXIAL |
Active | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 660V 1.75A AXIAL |
Active | Standard | 660V | 1.75A | 1.35V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 2µA @ 660V | 40pF @ 10V, 1MHz | Through Hole | E, Axial | - | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 85A DO5 |
Active | Standard | 600V | 85A (DC) | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 25µA @ 600V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 800V 45A DO203AB |
Active | Standard | 800V | 45A | 1.15V @ 90A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 800V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 12A DO203AA |
Active | Standard | 400V | 12A | 2.3V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 400V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 100V 2A AXIAL |
Discontinued at - | Standard | 100V | 2A | 1.5V @ 37.7A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 100V | - | Through Hole | A, Axial | - | -65°C ~ 155°C |
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Microsemi Corporation |
DIODE SCHOTTKY 5A 30V TOPHAT |
Discontinued at - | Schottky | 30V | 5A | 370mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10mA @ 30V | - | Through Hole | Axial | Axial | -65°C ~ 125°C |
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Microsemi Corporation |
DIODE GEN PURP 70V 50MA DO35 |
Active | Standard | 70V | 50mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 70V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 40V 180A HALFPAK |
Obsolete | Schottky | 40V | 180A | 700mV @ 180A | Fast Recovery =< 500ns, > 200mA (Io) | - | 4mA @ 40V | 7500pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | HALF-PAK | - |
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Microsemi Corporation |
DIODE GEN PURP 800V 12A DO203AA |
Active | Standard | 800V | 12A | 2.3V @ 240A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 800V | - | Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 35A DO5 |
Active | Standard | 600V | 35A | 1.4V @ 110A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 600V | - | Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 200A HALFPAK |
Obsolete | Standard | 600V | 200A | 1.35V @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | 130ns | 50µA @ 600V | - | Chassis Mount | HALF-PAK | HALF-PAK | - |
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Microsemi Corporation |
DIODE GEN PURP 3KV 570MA S AXIAL |
Active | Standard | 3000V | 570mA | 6V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 1µA @ 3000V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL |
Active | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A D5A |
Discontinued at - | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500µA @ 400V | 35pF @ 12V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |