Hersteller für Transistoren - FETs, MOSFETs - Arrays
| Artikelnummer | Hersteller / Marke | Kurze Beschreibung | Teilstatus | FET Typ | FET-Eigenschaft | Drain auf Source-Spannung (Vdss) | Strom - Dauerablass (Id) @ 25 ° C | Rds Ein (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Ladung (Qg) (Max) @ Vgs | Eingangskapazität (Ciss) (Max) @ Vds | Leistung max | Betriebstemperatur | Befestigungsart | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | Active | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | 1.3W | -20°C ~ 125°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | ||||
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8DIP | Active | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | 1.3W | -20°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | |||
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | Active | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | 1.3W | -20°C ~ 125°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |