Fabricants pour Transistors - FET, MOSFET - Matrices
| Numéro d'article | Fabricant / marque | Brève description | État de la pièce | FET Type | FET Caractéristique | Drain à la tension de source (Vdss) | Courant - Drain continu (Id) @ 25 ° C | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Charge de porte (Qg) (Max) @ Vgs | Capacitance d'entrée (Ciss) (Max) @ Vds | Puissance - Max | Température de fonctionnement | Type de montage | Paquet / cas | Package de périphérique fournisseur |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | Active | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | 1.3W | -20°C ~ 125°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | ||||
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8DIP | Active | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | 1.3W | -20°C ~ 125°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | |||
| Monolithic Power Systems Inc. | MOSFET 3N-CH 600V 0.08A 8SOIC | Active | 3 N-Channel, Common Gate | Standard | 600V | 80mA | 190 Ohm @ 10mA, 10V | 1.2V @ 250µA | 1.3W | -20°C ~ 125°C (TJ) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |