Hersteller für Transistoren - FETs, MOSFET - Einzeln
| Artikelnummer | Hersteller / Marke | Kurze Beschreibung | Teilstatus | FET Typ | Technologie | Drain auf Source-Spannung (Vdss) | Strom - Dauerablass (Id) @ 25 ° C | Drive Voltage (Max Rds On, Min Rds On) | Rds Ein (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Ladung (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Eigenschaft | Verlustleistung (Max) | Betriebstemperatur | Befestigungsart | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 4-Power Tab | 4-SIP | |||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad | |||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | Through Hole | 8-CDIP Exposed Pad | |||||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | Through Hole |