Fabricants pour Transistors - FET, MOSFET - Simples
| Numéro d'article | Fabricant / marque | Brève description | État de la pièce | FET Type | La technologie | Drain à la tension de source (Vdss) | Courant - Drain continu (Id) @ 25 ° C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Charge de porte (Qg) (Max) @ Vgs | Vgs (Max) | Capacitance d'entrée (Ciss) (Max) @ Vds | FET Caractéristique | Dissipation de puissance (Max) | Température de fonctionnement | Type de montage | Package de périphérique fournisseur | Paquet / cas |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 4-Power Tab | 4-SIP | |||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad | |||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | Through Hole | 8-CDIP Exposed Pad | |||||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | Through Hole |