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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.8A VESM |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.2V, 4.5V | 390 mOhm @ 800mA, 4.5V | - | - | ±8V | 100pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A SOT-23F |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 2A SOT-23F |
Active | P-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 4V, 10V | 300 mOhm @ 1A, 10V | 2V @ 1mA | 8.3nC @ 10V | +10V, -20V | 330pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 3.5A 2-3Z1A |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 1.8V, 4V | 126 mOhm @ 1A, 4V | 1V @ 1mA | 1.5nC @ 4V | ±12V | 123pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2A SOT23 |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 3.3V, 10V | 300 mOhm @ 1A, 10V | 2V @ 1mA | - | ±20V | 150pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 6UDFN |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 20 mOhm @ 4A, 10V | 2.2V @ 250µA | 20.4nC @ 4.5V | +20V, -25V | 1150pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.4A UFM |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 4.4A (Ta) | 1.5V, 4.5V | 25.8 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | ±8V | 1800pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 3.7 mOhm @ 40A, 10V | 2.4V @ 0.2mA | 27nC @ 10V | ±20V | 2500pF @ 20V | - | 630mW (Ta), 86W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 80A TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 4.5V, 10V | 2.3 mOhm @ 40A, 10V | 2.4V @ 0.3mA | 41nC @ 10V | ±20V | 3600pF @ 20V | - | 630mW (Ta), 104W (Tc) | 175°C | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 150V 9A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 150V | 9A (Ta) | 10V | 59 mOhm @ 4.5A, 10V | 4V @ 200µA | 7nC @ 10V | ±20V | 600pF @ 75V | - | 1.6W (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 1.24 mOhm @ 50A, 10V | 2.4V @ 500µA | 74nC @ 10V | ±20V | 7200pF @ 20V | - | 960mW (Ta), 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 150A SOP8 |
Active | N-Channel | MOSFET (Metal Oxide) | 75V | 150A (Tc) | 10V | 2.6 mOhm @ 50A, 10V | 4V @ 1mA | 72nC @ 10V | ±20V | 6000pF @ 37.5V | - | 142W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 200V 21A 8-SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 200V | 13A (Ta) | 10V | 64 mOhm @ 6.5A, 10V | 4V @ 300µA | 11.2nC @ 10V | ±20V | 1100pF @ 100V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 92A 8DSOP |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 92A (Tc) | 10V | 4.5 mOhm @ 46A, 10V | 4V @ 1mA | 58nC @ 10V | ±20V | 5200pF @ 50V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 116A 8DSOP |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 116A (Tc) | 10V | 4 mOhm @ 50A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 5300pF @ 40V | - | 800mW (Ta), 142W (Tc) | 150°C (TJ) | Surface Mount | 8-DSOP Advance | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 4.5V, 10V | 4.4 mOhm @ 30A, 4.5V | 2.5V @ 500µA | 60nC @ 10V | ±20V | 5435pF @ 30V | - | 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 150A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 150A (Tc) | 4.5V, 10V | 0.85 mOhm @ 50A, 10V | 2.4V @ 1mA | 103nC @ 10V | ±20V | 9600pF @ 20V | - | 1W (Ta), 170W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 60A SOP ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 60A (Tc) | 10V | 4 mOhm @ 30A, 10V | 4V @ 1mA | 59nC @ 10V | ±20V | 5300pF @ 40V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A 5DFN |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 98 mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 240W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 61.8A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 61.8A (Ta) | 10V | 40 mOhm @ 21A, 10V | 3.5V @ 3.1mA | 135nC @ 10V | ±30V | 6500pF @ 300V | Super Junction | 400W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.2A |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 200mA (Ta) | 4.5V, 10V | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 320mW (Ta) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.18A |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.1 Ohm @ 150mA, 4.5V | 1V @ 100µA | 0.34nC @ 4.5V | ±10V | 36pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 20V 200MA SSM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 200mA (Ta) | 1.5V, 4.5V | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 100mW (Ta) | 150°C (TA) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 0.1A USM |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 12 Ohm @ 10mA, 4V | 1.7V @ 100µA | - | ±20V | 9.1pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A U-MOS III |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.25A VESM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.5V, 4.5V | 2.2 Ohm @ 100mA, 4.5V | 1V @ 1mA | - | ±10V | 12pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A CST3 |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 0.1A SSM |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 3.6 Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 13.5pF @ 3V | - | 100mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.33A SSM |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 330mA (Ta) | 1.5V, 4.5V | 1.31 Ohm @ 100mA, 4.5V | 1V @ 1mA | 1.2nC @ 4V | ±8V | 43pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.1A USM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 3 Ohm @ 10mA, 4V | 1.1V @ 100µA | - | ±10V | 9.3pF @ 3V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 0.1A USM |
Active | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 20 Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 7pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.8A SSM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 1.4A CST3 |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.2V, 4.5V | 390 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1.6nC @ 4.5V | ±8V | 100pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.8A VESM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 4A SOT-23F |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 4.5V | 55 mOhm @ 4A, 4.5V | - | - | ±12V | 190pF @ 30V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P CH 30V 4A SOT-23F |
Active | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 71 mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | ±20V | 280pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CHANNEL 20V 4A SOT23F |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | ±8V | 410pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.5V, 4.5V | 71 mOhm @ 3A, 4.5V | 1V @ 1mA | 2nC @ 4V | ±8V | 153pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 6A 2-3Z1A |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28 mOhm @ 5A, 10V | 2.5V @ 100µA | 3.4nC @ 4.5V | ±20V | 436pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A CST3B |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | ±8V | 290pF @ 10V | - | - | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 3.5A SOT-23F |
Active | P-Channel | MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4V, 10V | 134 mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | +10V, -20V | 660pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.5V, 4.5V | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | ±8V | 840pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A UFM |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 28 mOhm @ 3A, 4V | 1V @ 1mA | 13.6nC @ 4V | ±10V | 1010pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 10A UDFN6B |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.5V, 4.5V | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | ±8V | 2600pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 14A UDFN6B |
Active | P-Channel | MOSFET (Metal Oxide) | 12V | 14A (Ta) | - | 9.1 mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | - | 3350pF @ 6V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A SOT-23F |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 36 mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | ±20V | 550pF @ 10V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 38V 2A |
Active | N-Channel | MOSFET (Metal Oxide) | 38V | 2A (Ta) | 4V, 10V | 150 mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | ±20V | 120pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P CH 12V 12A UDFN6B |
Active | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Ta) | 1.2V, 4.5V | 12 mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | ±6V | 2700pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 12V 7A 6WCSP6C |
Active | N-Channel | MOSFET (Metal Oxide) | 12V | 7A (Ta) | 1.5V, 4.5V | 18 mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | ±8V | 600pF @ 6V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-WCSPC (1.5x1.0) | 6-UFBGA, WLCSP |
