Número da peça Fabricante / Marca Descrição breve Status da ParteTipo FETTecnologiaTensão de drenagem para fonte (Vdss)Corrente - Drenagem Contínua (Id) @ 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Capacitância de entrada (Ciss) (Max) @ VdsFET FeatureDissipação de energia (máx.)Temperatura de operaçãoTipo de montagemPacote de dispositivos de fornecedoresPacote / Caso
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 4-PIN ActiveN-ChannelMOSFET (Metal Oxide)55V
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5V400 mOhm @ 100mA, 5V2.4V @ 100µA4.3nC @ 5V10V290pF @ 28V
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50W (Tj)-55°C ~ 225°C (TJ)Through Hole4-Power Tab4-SIP
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP ActiveN-ChannelMOSFET (Metal Oxide)55V
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5V400 mOhm @ 100mA, 5V2.4V @ 100µA4.3nC @ 5V10V290pF @ 28V
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50W (Tj)-55°C ~ 225°C (TJ)Through Hole8-CDIP-EP8-CDIP Exposed Pad
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 8-DIP ActiveN-ChannelMOSFET (Metal Oxide)55V
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5V400 mOhm @ 100mA, 5V2.4V @ 100µA4.3nC @ 5V10V290pF @ 28V
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50W (Tj)
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Through Hole
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8-CDIP Exposed Pad
Honeywell Microelectronics & Precision Sensors MOSFET N-CH 55V 4-PIN ActiveN-ChannelMOSFET (Metal Oxide)55V
-
5V400 mOhm @ 100mA, 5V2.4V @ 100µA4.3nC @ 5V10V290pF @ 28V
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50W (Tj)
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Through Hole
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