Produttori per Transistor - FET, MOSFET - Singoli
| Numero di parte | Produttore / Marca | Breve descrizione | Stato parte | Tipo FET | Tecnologia | Drain to Source Voltage (Vdss) | Corrente - Scarico continuo (Id) @ 25 ° C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (massimo) | Capacità di ingresso (Ciss) (Max) @ Vds | Caratteristica FET | Dissipazione di potenza (max) | temperatura di esercizio | Tipo di montaggio | Pacchetto dispositivo fornitore | Pacchetto / caso |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 4-Power Tab | 4-SIP | |||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | -55°C ~ 225°C (TJ) | Through Hole | 8-CDIP-EP | 8-CDIP Exposed Pad | |||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 8-DIP | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | Through Hole | 8-CDIP Exposed Pad | |||||
| Honeywell Microelectronics & Precision Sensors | MOSFET N-CH 55V 4-PIN | Active | N-Channel | MOSFET (Metal Oxide) | 55V | 5V | 400 mOhm @ 100mA, 5V | 2.4V @ 100µA | 4.3nC @ 5V | 10V | 290pF @ 28V | 50W (Tj) | Through Hole |