Microsemi Distributor - Diodes - Rectifiers - Single - APT60DQ120BG APT30D120BG - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
APT60DQ120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 60A TO247	Active	Standard	1200V	60A	3.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	320ns	100µA @ 1200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
APT30D120BG	Microsemi Corporation	DIODE GEN PURP 1.2KV 30A TO247	Active	Standard	1200V	30A	2.5V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	370ns	250µA @ 1200V	-	Through Hole	TO-247-2	TO-247	-55°C ~ 175°C
1N482B	Microsemi Corporation	DIODE GEN PURP 30V 200MA DO35	Active	Standard	30V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 30V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
1N484B	Microsemi Corporation	DIODE GEN PURP 125V 200MA DO35	Active	Standard	125V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 200°C
1N647UR-1	Microsemi Corporation	DIODE GEN PURP 400V 400MA DO213	Active	Standard	400V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 400V	-	Surface Mount	DO-213AA (Glass)	DO-213AA	-65°C ~ 175°C
DSB0.2A40	Microsemi Corporation	DIODE SCHOTTKY 20V 200MA DO35	Active	Schottky	20V	200mA	510mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 40V	50pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
DSB0.2A30	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N914UR	Microsemi Corporation	ZENER DIODE	Active	Standard	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
APT60S20SG/TR	Microsemi Corporation	DIODE SCHOTTKY 200V 75A D3PAK	Active	Schottky	200V	75A	900mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	1mA @ 200V	-	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3Pak	-55°C ~ 150°C
JANTX1N914	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35	Active	Standard	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 75V	4pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 175°C
APT60D20BG	Microsemi Corporation	DIODE GEN PURP 200V 60A TO247	Active	Standard	200V	60A	1.3V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	31ns	250µA @ 200V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 175°C
1N483	Microsemi Corporation	DIODE RECT STD RECOVERY	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N483A	Microsemi Corporation	DIODE RECT STD RECOVERY	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N485	Microsemi Corporation	DIODE GEN PURP 180V 100MA DO7	Active	Standard	180V	100mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 180V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
1N485A	Microsemi Corporation	DIODE GEN PURP 180V 100MA DO7	Active	Standard	180V	100mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 180V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
1N649UR-1	Microsemi Corporation	DIODE GEN PURP 600V 400MA DO213	Active	Standard	600V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 600V	-	Surface Mount	DO-213AA (Glass)	DO-213AA	-65°C ~ 175°C
1N4247	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N6677	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6677-1	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N486A	Microsemi Corporation	ZENER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N4454UR-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA	Active	Standard	50V	200mA	1V @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-55°C ~ 175°C
1N486B	Microsemi Corporation	ZENER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5617E3	Microsemi Corporation	RECTIFIER	Active	Standard	400V	1A	800mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
APT60S20SG	Microsemi Corporation	DIODE SCHOTTKY 200V 75A D3	Active	Schottky	200V	75A	900mV @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	1mA @ 200V	-	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3 [S]	-55°C ~ 150°C
1N483BUR	Microsemi Corporation	DIODE GEN PURP 225V 50MA DO213AA	Active	Standard	225V	50mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 225V	-	Surface Mount	DO-213AA	-	-65°C ~ 175°C
1N485BUR	Microsemi Corporation	DIODE GEN PURP 180V 100MA DO213	Active	Standard	180V	100mA (DC)	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	25nA @ 180V	-	Surface Mount	DO-213AA	-	-65°C ~ 175°C
1N486BUR	Microsemi Corporation	DIODE RECT STD RECOVERY	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N3611E3	Microsemi Corporation	RECTIFIER STANDARD RECOVERY GLAS	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 200V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
JANTXV1N4150UR-1	Microsemi Corporation	DIODE GEN PURP 50V 200MA DO213AA	Active	Standard	50V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N646UR-1	Microsemi Corporation	SILICON SWITCHING DIODES	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N4246	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
CDLL1A60	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO213AB	Active	Schottky	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	0.9pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF	DO-213AB	-
JAN1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
CDLL486B	Microsemi Corporation	DIODE GEN PURP 250V 200MA DO213	Active	Standard	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100µA @ 250V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N6643	Microsemi Corporation	DIODE GEN PURPOSE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N3611	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 300V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N4254	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N3595A-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO35	Active	Standard	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	2nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
UPR60/TR13	Microsemi Corporation	DIODE GEN PURP 600V 2A POWERMITE	Active	Standard	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 600V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
UPR60/TR7	Microsemi Corporation	DIODE GEN PURP 600V 2A POWERMITE	Active	Standard	600V	2A	1.6V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 600V	-	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
JAN1N4249	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N4245	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
CDLL1A80	Microsemi Corporation	DIODE SCHOTTKY 80V 1A DO213AB	Active	Schottky	80V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Surface Mount	DO-213AB, MELF	DO-213AB	-
APT60D100SG	Microsemi Corporation	DIODE GEN PURP 1KV 60A D3	Active	Standard	1000V	60A	2.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	280ns	250µA @ 1000V	-	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3 [S]	-55°C ~ 175°C
1N5712-1	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5622US	Microsemi Corporation	DIODE GEN PURP 1KV 1A D5A	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
1N6677UR-1	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4942	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N4946	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	25pF @ 12V, 1MHz	Through Hole	A, Axial	Axial	-65°C ~ 175°C
JANTX1N5616	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 200°C

Manufacturers for Diodes - Rectifiers - Single