Microsemi Distributor - Diodes - Rectifiers - Single - JAN1N5809 JANTXV1N4249 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N5809	Microsemi Corporation	DIODE GEN PURP 100V 6A AXIAL	Active	Standard	100V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N4249	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N6643U	Microsemi Corporation	DIODE GEN PURP 50V 300MA B-MELF	Active	Standard	50V	300mA (DC)	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 50V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5811	Microsemi Corporation	DIODE GEN PURP 150V 6A AXIAL	Active	Standard	150V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5418US	Microsemi Corporation	DIODE GEN PURP 400V 3A D5B	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
JAN1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTXV1N4246	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5553	Microsemi Corporation	DIODE GEN PURP 800V 3A AXIAL	Active	Standard	800V	3A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5554	Microsemi Corporation	DIODE GEN PURP 1KV 3A AXIAL	Active	Standard	1000V	3A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6628	Microsemi Corporation	DIODE GEN PURP 600V 1.75A AXIAL	Active	Standard	600V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	2µA @ 600V	-	Through Hole	A, Axial	A-PAK	-65°C ~ 150°C
JANTX1N5711-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO35	Active	Schottky	70V	33mA	410mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
JANTX1N5712-1	Microsemi Corporation	DIODE SCHOTTKY 20V 750MA DO35	Active	Schottky	20V	750mA	1V @ 35mA	Fast Recovery =< 500ns, > 200mA (Io)	-	150nA @ 16V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
JAN1N5623	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N4946	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5808	Microsemi Corporation	DIODE RECT ULT FAST REC B-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N6639	Microsemi Corporation	DIODE GEN PURP 75V 300MA AXIAL	Active	Standard	75V	300mA (DC)	1.2V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100µA @ 75V	-	Through Hole	D, Axial	D-5D	-65°C ~ 175°C
JANTX1N6641	Microsemi Corporation	DIODE GEN PURP 50V 300MA AXIAL	Active	Standard	50V	300mA (DC)	1.1V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	100µA @ 50V	-	Through Hole	D, Axial	D-5D	-65°C ~ 175°C
1N6662	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5618US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N5550	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTXV1N4247	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JAN1N5415US	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL	Active	Standard	50V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 50V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5807US	Microsemi Corporation	DIODE GEN PURP 50V 6A B-MELF	Active	Standard	50V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JAN1N5809US	Microsemi Corporation	DIODE GEN PURP 100V 6A B-MELF	Active	Standard	100V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JAN1N5811US	Microsemi Corporation	DIODE GEN PURP 150V 6A B-MELF	Active	Standard	150V	6A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N5186	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	2µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5623US	Microsemi Corporation	DIODE GEN PURP 1KV 1A D5A	Active	Standard	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N6620	Microsemi Corporation	DIODE GEN PURP 220V 1.2A AXIAL	Active	Standard	220V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 220V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N6621	Microsemi Corporation	DIODE GEN PURP 440V 1.2A AXIAL	Active	Standard	440V	1.2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 440V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N6625	Microsemi Corporation	DIODE GEN PURP 1.1KV 1A AXIAL	Active	Standard	1100V	1A	1.75V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	1µA @ 1100V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N6626	Microsemi Corporation	DIODE GEN PURP 220V 1.75A AXIAL	Active	Standard	220V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 220V	40pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N6627	Microsemi Corporation	DIODE GEN PURP 440V 1.75A AXIAL	Active	Standard	440V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 440V	40pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N4305-1	Microsemi Corporation	DIODE SWITCHING	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6623	Microsemi Corporation	DIODE GEN PURP 880V 1A AXIAL	Active	Standard	880V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 880V	10pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N4255	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4256	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4257	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5415US	Microsemi Corporation	DIODE GEN PURP 50V 3A B-MELF	Active	Standard	50V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 50V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N5554	Microsemi Corporation	DIODE GEN PURP 1KV 5A AXIAL	Active	Standard	1000V	5A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	2µA @ 1000V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N4305-1E3	Microsemi Corporation	DIODE SWITCHING DO-35	Active	Standard	50V	200mA	850mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	2ns	100nA @ 50V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35 (DO-204AH)	-65°C ~ 150°C
1N6543	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5419US	Microsemi Corporation	DIODE GEN PURP 500V 3A D5B	Active	Standard	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
JANTXV1N5619	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N6629	Microsemi Corporation	DIODE GEN PURP 880V 1.4A AXIAL	Active	Standard	880V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 880V	40pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N6630	Microsemi Corporation	DIODE GEN PURP 990V 1.4A AXIAL	Active	Standard	990V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 990V	40pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N6662US	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6544	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5804	Microsemi Corporation	DIODE GEN PURP 100V 1A AXIAL	Active	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N3595UR-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO213	Active	Standard	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
JAN1N5620US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C

Manufacturers for Diodes - Rectifiers - Single