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Microsemi Corporation |
DIODE GEN PURP 1.2KV 60A TO247 |
Active | Standard | 1200V | 60A | 3.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 1.2KV 30A TO247 |
Active | Standard | 1200V | 30A | 2.5V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 370ns | 250µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 30V 200MA DO35 |
Active | Standard | 30V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 30V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 125V 200MA DO35 |
Active | Standard | 125V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 400MA DO213 |
Active | Standard | 400V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 400V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 20V 200MA DO35 |
Active | Schottky | 20V | 200mA | 510mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 5µA @ 40V | 50pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 125°C |
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Microsemi Corporation |
SCHOTTKY DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
ZENER DIODE |
Active | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 200V 75A D3PAK |
Active | Schottky | 200V | 75A | 900mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 1mA @ 200V | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3Pak | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 75V 200MA DO35 |
Active | Standard | 75V | 200mA | 1.2V @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 (DO-204AH) | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 60A TO247 |
Active | Standard | 200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 250µA @ 200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Microsemi Corporation |
DIODE RECT STD RECOVERY |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE RECT STD RECOVERY |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 180V 100MA DO7 |
Active | Standard | 180V | 100mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 180V 100MA DO7 |
Active | Standard | 180V | 100mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 400MA DO213 |
Active | Standard | 600V | 400mA | 1V @ 400mA | Standard Recovery >500ns, > 200mA (Io) | - | 50nA @ 600V | - | Surface Mount | DO-213AA (Glass) | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL |
Active | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
RECTIFIER DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
RECTIFIER DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
ZENER DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA |
Active | Standard | 50V | 200mA | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
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Microsemi Corporation |
ZENER DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
RECTIFIER |
Active | Standard | 400V | 1A | 800mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 200V 75A D3 |
Active | Schottky | 200V | 75A | 900mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 1mA @ 200V | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 225V 50MA DO213AA |
Active | Standard | 225V | 50mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 225V | - | Surface Mount | DO-213AA | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 180V 100MA DO213 |
Active | Standard | 180V | 100mA (DC) | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 180V | - | Surface Mount | DO-213AA | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE RECT STD RECOVERY |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
RECTIFIER STANDARD RECOVERY GLAS |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 200V | - | Through Hole | A, Axial | A, Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 50V 200MA DO213AA |
Active | Standard | 50V | 200mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
SILICON SWITCHING DIODES |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL |
Active | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 60V 1A DO213AB |
Active | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | 0.9pF @ 5V, 1MHz | Surface Mount | DO-213AB, MELF | DO-213AB | - |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL |
Active | Standard | 200V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 250V 200MA DO213 |
Active | Standard | 250V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 100µA @ 250V | - | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURPOSE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL |
Active | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
RECTIFIER DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 125V 150MA DO35 |
Active | Standard | 125V | 150mA | 920mV @ 100mA | Small Signal =< 200mA (Io), Any Speed | 3µs | 2nA @ 125V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 2A POWERMITE |
Active | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 2A POWERMITE |
Active | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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Microsemi Corporation |
DIODE GEN PURP 1KV 1A AXIAL |
Active | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 1000V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL |
Active | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 200V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE SCHOTTKY 80V 1A DO213AB |
Active | Schottky | 80V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 80V | - | Surface Mount | DO-213AB, MELF | DO-213AB | - |
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Microsemi Corporation |
DIODE GEN PURP 1KV 60A D3 |
Active | Standard | 1000V | 60A | 2.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 280ns | 250µA @ 1000V | - | Surface Mount | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | D3 [S] | -55°C ~ 175°C |
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Microsemi Corporation |
SCHOTTKY DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 1KV 1A D5A |
Active | Standard | 1000V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
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Microsemi Corporation |
RECTIFIER DIODE |
Active | - | - | - | - | - | - | - | - | - | - | - | - |
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Microsemi Corporation |
DIODE GEN PURP 200V 1A AXIAL |
Active | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | 45pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 600V 1A AXIAL |
Active | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 1µA @ 600V | 25pF @ 12V, 1MHz | Through Hole | A, Axial | Axial | -65°C ~ 175°C |
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Microsemi Corporation |
DIODE GEN PURP 400V 1A AXIAL |
Active | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |