Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Microsemi Corporation DIODE SCHOTTKY 15V 6A POWERMITE ActiveSchottky15V6A320mV @ 6AFast Recovery =< 500ns, > 200mA (Io)
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4mA @ 15V
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Surface MountDO-216AAPowermite-55°C ~ 125°C
Microsemi Corporation DIODE SCHOTTKY 3A 200V POWERMITE Active
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Microsemi Corporation DIODE GEN PURP 50V 3A DO214AB ActiveStandard50V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 50V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 100V 3A DO214AB ActiveStandard100V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 150V 3A DO214AB ActiveStandard150V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 150V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 200V 3A DO214AB ActiveStandard200V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 200V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 300V 3A DO214AB ActiveStandard300V3A1.1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 300V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 400V 3A DO214AB ActiveStandard400V3A1.1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 500V 3A DO214AB ActiveStandard500V3A1.1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 500V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 600V 3A DO214AB ActiveStandard600V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 600V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 700V 3A DO214AB ActiveStandard700V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 700V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 800V 3A DO214AB ActiveStandard800V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 800V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 600V 2A POWERMITE ActiveStandard600V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns1µA @ 600V
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Surface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE SCHOTTKY 20V 1A DO213AB ActiveSchottky20V1A600mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 20V0.9pF @ 5V, 1MHzSurface MountDO-213AB, MELFDO-213AB
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Microsemi Corporation DIODE GEN PURP 600V 15A TO247 ActiveStandard600V15A1.8V @ 15AFast Recovery =< 500ns, > 200mA (Io)80ns150µA @ 600V
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Through HoleTO-247-2TO-247-55°C ~ 175°C
Microsemi Corporation DIODE SCHOTTKY 150V 6A POWERMITE ActiveSchottky150V6A750mV @ 6AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 150V
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Surface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 1.2KV 15A TO247 ActiveStandard1200V15A3.3V @ 15AFast Recovery =< 500ns, > 200mA (Io)240ns100µA @ 1200V
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Through HoleTO-247-3TO-247 [B]-55°C ~ 175°C
Microsemi Corporation DIODE SCHOTTKY 100V 8A DO215AB ActiveSchottky100V8A780mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 100V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE SCHOTTKY 80V 8A DO215AB ActiveSchottky80V8A780mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 80V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE SCHOTTKY 90V 8A DO215AB ActiveSchottky90V8A780mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 90V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 1.2KV 30A TO220 ActiveStandard1200V30A3.3V @ 30AFast Recovery =< 500ns, > 200mA (Io)320ns100µA @ 1200V
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Through HoleTO-220-3TO-220 [K]-55°C ~ 175°C
Microsemi Corporation DIODE SCHOTTKY 40V 10A POWERMITE ActiveSchottky40V10A490mV @ 8AFast Recovery =< 500ns, > 200mA (Io)
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300µA @ 35V700pF @ 4V, 1MHzSurface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE SCHOTTKY 10A 100V PWRMITE Active
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Microsemi Corporation DIODE SCHOTTKY 30V 1A DO213AB ActiveSchottky30V1A600mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V0.9pF @ 5V, 1MHzSurface MountDO-213AB, MELFDO-213AB
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Microsemi Corporation DIODE GEN PURP 75V 200MA DO213AA ActiveStandard75V200mA1.2V @ 50mASmall Signal =< 200mA (Io), Any Speed20ns500nA @ 75V4pF @ 0V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 3A DO215AB ActiveStandard50V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 50V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 100V 3A DO215AB ActiveStandard100V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 100V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 150V 3A DO215AB ActiveStandard150V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 150V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 200V 3A DO215AB ActiveStandard200V3A950mV @ 3AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 200V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 300V 3A DO215AB ActiveStandard300V3A1.1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 300V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 400V 3A DO215AB ActiveStandard400V3A1.1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 500V 3A DO215AB ActiveStandard500V3A1.1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 500V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 600V 3A DO215AB ActiveStandard600V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 600V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 700V 3A DO215AB ActiveStandard700V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 700V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 800V 3A DO215AB ActiveStandard800V3A1.2V @ 3AFast Recovery =< 500ns, > 200mA (Io)60ns10µA @ 800V
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Surface MountDO-215AB, SMC Gull WingDO-215AB-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 125MA DO34 ActiveStandard50V125mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed30ns100nA @ 50V
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Through HoleDO-204AG, DO-34, AxialDO-34-55°C ~ 175°C
Microsemi Corporation DIODE ZENER 125 V DO-35 ActiveStandard125V150mA1V @ 200mASmall Signal =< 200mA (Io), Any Speed3µs1nA @ 125V
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Through HoleDO-204AH, DO-35, AxialDO-35 (DO-204AH)-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 200MA DO213AA ActiveStandard50V200mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns100nA @ 50V
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Surface MountDO-213AADO-213AA-55°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 75V 125MA DO34 ActiveStandard75V125mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed20ns500nA @ 75V
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Through HoleDO-204AG, DO-34, AxialDO-34-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 200V 2A POWERMITE ActiveStandard200V2A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 200V
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Surface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 300V 2A POWERMITE ActiveStandard300V2A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 300V
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Surface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 200V 2A POWERMITE ActiveStandard200V2A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 200V
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Surface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 300V 2A POWERMITE ActiveStandard300V2A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 300V
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Surface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 400V 2A POWERMITE ActiveStandard400V2A1.25V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V
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Surface MountDO-216AAPowermite-55°C ~ 150°C
Microsemi Corporation DIODE GEN PURP 75V 300MA DO213AA ActiveStandard75V300mA1V @ 200mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V2.5pF @ 0V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 50V 300MA DO213AA ActiveStandard50V300mA680mV @ 10mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 50V2.5pF @ 0V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 175°C
Microsemi Corporation DIODE GEN PURP 1.2KV 15A TO247 ActiveStandard1200V15A2.5V @ 15AFast Recovery =< 500ns, > 200mA (Io)260ns250µA @ 1200V
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Through HoleTO-247-2TO-247 [B]-55°C ~ 150°C
Microsemi Corporation DIODE SCHOTTKY 20V 200MA DO213AA ActiveSchottky20V200mA500mV @ 200mASmall Signal =< 200mA (Io), Any Speed
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5µA @ 20V50pF @ 0V, 1MHzSurface MountDO-213AADO-213AA-65°C ~ 125°C
Microsemi Corporation DIODE ULT FAST 5A 50V SMCJ Active
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Microsemi Corporation DIODE GEN PURP 100V 5A DO214AB ActiveStandard100V5A950mV @ 5AFast Recovery =< 500ns, > 200mA (Io)30ns10µA @ 100V
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Surface MountDO-214AB, SMCDO-214AB-55°C ~ 175°C