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Manufacturers for Diodes - Rectifiers - Single

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
D3041N68TXPSA1
 Infineon Technologies DIODE GEN PURP 6.8KV 4090A ActiveStandard6800V4090A1.7V @ 4000AStandard Recovery >500ns, > 200mA (Io)
-
100mA @ 6800V
-
Chassis MountDO-200AE
-
-40°C ~ 160°C
D3001N68TXPSA1
 Infineon Technologies DIODE GEN PURP 6.8KV 3910A ActiveStandard6800V3910A1.7V @ 4000AStandard Recovery >500ns, > 200mA (Io)
-
100mA @ 6800V
-
Chassis MountDO-200AE
-
-40°C ~ 160°C
D1331SH45TXPSA1
 Infineon Technologies DIODE GEN PURP 4.5KV 1710A ActiveStandard4500V1710A4.2V @ 2500AStandard Recovery >500ns, > 200mA (Io)
-
150mA @ 4500V
-
Chassis MountDO-200AE
-
0°C ~ 140°C
D2601NH90TXPSA1
 Infineon Technologies DIODE GEN PURP 9KV 1790A ActiveStandard9000V1790A5.5V @ 4000AStandard Recovery >500ns, > 200mA (Io)
-
150mA @ 9000V
-
Chassis MountDO-200AE
-
0°C ~ 140°C
D1821SH45TPRXPSA1
 Infineon Technologies DIODE GEN PURP 4.5KV 2210A ActiveStandard4500V2210A3.6V @ 2500AStandard Recovery >500ns, > 200mA (Io)
-
150mA @ 4500V
-
Chassis MountDO-200AE
-
0°C ~ 140°C
D3501N42TVFXPSA1
 Infineon Technologies HIGH POWER THYR / DIO ActiveStandard4200V4870A
-
Standard Recovery >500ns, > 200mA (Io)
-
100mA @ 4200V
-
Chassis MountDO-200AEBG-D12035K-1160°C (Max)
D1961SH45TXPSA1
 Infineon Technologies DIODE GEN PURP 4.5KV 2380A ActiveStandard4500V2380A2.5V @ 2500AStandard Recovery >500ns, > 200mA (Io)
-
150mA @ 4500V
-
Chassis MountDO-200AE
-
0°C ~ 140°C
D1721NH90TAOSA1
 Infineon Technologies DIODE GEN PURP D12026K-1 ActiveStandard
-
2160A
-
Standard Recovery >500ns, > 200mA (Io)
-
150mA @ 9000V
-
Chassis MountDO-200AEBG-D10026K-10°C ~ 140°C
D6001N50TXPSA1
 Infineon Technologies DIODE GEN PURP 5KV 8010A ActiveStandard5000V8010A1.3V @ 6000AStandard Recovery >500ns, > 200mA (Io)
-
400mA @ 5000V
-
Chassis MountDO-200AE
-
-40°C ~ 160°C
BAW78DE6327HTSA1
 Infineon Technologies DIODE GEN PURP 400V 1A SOT89 ObsoleteStandard400V1A (DC)1.6V @ 1AStandard Recovery >500ns, > 200mA (Io)1µs1µA @ 400V10pF @ 0V, 1MHzSurface MountTO-243AAPG-SOT89150°C (Max)
SDP06S60
 Infineon Technologies DIODE SCHOTTKY 600V 6A TO220AB ObsoleteSilicon Carbide Schottky600V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns200µA @ 600V300pF @ 0V, 1MHzThrough HoleTO-220-3P-TO220AB-55°C ~ 175°C
SDT04S60
 Infineon Technologies DIODE SCHOTTKY 600V 4A TO220-2 ObsoleteSilicon Carbide Schottky600V4A (DC)1.9V @ 4ANo Recovery Time > 500mA (Io)0ns200µA @ 600V150pF @ 0V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
SDT06S60
 Infineon Technologies DIODE SCHOTTKY 600V 6A TO220-2 ObsoleteSilicon Carbide Schottky600V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns200µA @ 600V300pF @ 0V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
SDT10S30
 Infineon Technologies DIODE SCHOTTKY 300V 10A TO220-2 ObsoleteSilicon Carbide Schottky300V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 300V600pF @ 0V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
SDT12S60
 Infineon Technologies DIODE SCHOTTKY 600V 12A TO220-2 ObsoleteSilicon Carbide Schottky600V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns400µA @ 600V450pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
BAS 16-02V E6327
 Infineon Technologies DIODE GEN PURP 80V 200MA SC79-2 ObsoleteStandard80V200mA (DC)1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed4ns1µA @ 75V2pF @ 0V, 1MHzSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
BAS 16-02W E6327
 Infineon Technologies DIODE GEN PURP 80V 200MA SCD80-2 ObsoleteStandard80V200mA (DC)1.25V @ 150mASmall Signal =< 200mA (Io), Any Speed4ns1µA @ 75V2pF @ 0V, 1MHzSurface MountSC-80PG-SCD80-2150°C (Max)
BAS16WE6433HTMA1
 Infineon Technologies DIODE GEN PURP 80V 250MA SOT323 ObsoleteStandard80V250mA (DC)1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)4ns1µA @ 75V2pF @ 0V, 1MHzSurface MountSC-70, SOT-323PG-SOT323-3150°C (Max)
BAS5202VE6127XT
 Infineon Technologies DIODE SCHOTTKY 45V 750MA SC79-2 Discontinued at -Schottky45V750mA (DC)600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V10pF @ 10V, 1MHzSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
BAS 52-02V E6327
 Infineon Technologies DIODE SCHOTTKY 45V 750MA SC79-2 ObsoleteSchottky45V750mA (DC)600mV @ 200mAFast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 45V10pF @ 10V, 1MHzSurface MountSC-79, SOD-523PG-SC79-2150°C (Max)
BAS 70-02W E6327
 Infineon Technologies DIODE SCHOTTKY 70V 70MA SCD80-2 ObsoleteSchottky70V70mA (DC)1V @ 15mASmall Signal =< 200mA (Io), Any Speed100ps100nA @ 50V2pF @ 0V, 1MHzSurface MountSC-80PG-SCD80-2-55°C ~ 125°C
BAT 60B E6433
 Infineon Technologies DIODE SCHOTTKY 10V 3A SOD323-2 ObsoleteSchottky10V3A (DC)600mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
25µA @ 8V30pF @ 5V, 1MHzSurface MountSC-76, SOD-323PG-SOD323-2150°C (Max)
BAT 64-02W E6327
 Infineon Technologies DIODE SCHOTTKY 40V 120MA SCD80-2 ObsoleteSchottky40V120mA750mV @ 100mASmall Signal =< 200mA (Io), Any Speed5ns2µA @ 30V6pF @ 1V, 1MHzSurface MountSC-80PG-SCD80-2150°C (Max)
IDH04S60CAKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 4A TO220-2 Discontinued at -Silicon Carbide Schottky600V4A (DC)1.9V @ 4ANo Recovery Time > 500mA (Io)0ns50µA @ 600V130pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH05S60CAKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 5A TO220-2 Discontinued at -Silicon Carbide Schottky600V5A (DC)1.7V @ 5ANo Recovery Time > 500mA (Io)0ns70µA @ 600V240pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH06S60CAKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 6A TO220-2 Discontinued at -Silicon Carbide Schottky600V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns80µA @ 600V280pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH08S60CAKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 8A TO220-2 Discontinued at -Silicon Carbide Schottky600V8A (DC)1.7V @ 8ANo Recovery Time > 500mA (Io)0ns100µA @ 600V310pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH10S60CAKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 10A TO220-2 Discontinued at -Silicon Carbide Schottky600V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns140µA @ 600V480pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH12S60CAKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 12A TO220-2 Discontinued at -Silicon Carbide Schottky600V12A (DC)1.7V @ 12ANo Recovery Time > 500mA (Io)0ns160µA @ 600V530pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
IDH16S60CAKSA1
 Infineon Technologies DIODE SCHOTTKY 600V 16A TO220-2 Discontinued at -Silicon Carbide Schottky600V16A (DC)1.7V @ 16ANo Recovery Time > 500mA (Io)0ns200µA @ 600V650pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
MMBD914LT3HTMA1
 Infineon Technologies DIODE GEN PURP 100V 250MA SOT23 ObsoleteStandard100V250mA (DC)1.25V @ 150mAFast Recovery =< 500ns, > 200mA (Io)4ns100nA @ 75V2pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3150°C (Max)
SDB06S60
 Infineon Technologies DIODE SCHOTTKY 600V 6A D2PAK ObsoleteSilicon Carbide Schottky600V6A (DC)1.7V @ 6ANo Recovery Time > 500mA (Io)0ns200µA @ 600V300pF @ 0V, 1MHzSurface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABD²PAK-55°C ~ 175°C
SDD04S60
 Infineon Technologies DIODE SCHOTTKY 600V 4A TO252-3 ObsoleteSilicon Carbide Schottky600V4A (DC)1.9V @ 4ANo Recovery Time > 500mA (Io)0ns200µA @ 600V150pF @ 0V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63P-TO252-3-55°C ~ 175°C
SDP10S30
 Infineon Technologies DIODE SCHOTTKY 300V 10A TO220-3 ObsoleteSilicon Carbide Schottky300V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns200µA @ 300V600pF @ 0V, 1MHzThrough HoleTO-220-3PG-TO220-3-55°C ~ 175°C
SDT05S60
 Infineon Technologies DIODE SCHOTTKY 600V 5A TO220-2 ObsoleteSilicon Carbide Schottky600V5A (DC)1.7V @ 5ANo Recovery Time > 500mA (Io)0ns200µA @ 600V170pF @ 1V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
SDT08S60
 Infineon Technologies DIODE SCHOTTKY 600V 8A TO220-2 ObsoleteSilicon Carbide Schottky600V8A (DC)1.7V @ 8ANo Recovery Time > 500mA (Io)0ns300µA @ 600V280pF @ 0V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
SDT10S60
 Infineon Technologies DIODE SCHOTTKY 600V 10A TO220-2 ObsoleteSilicon Carbide Schottky600V10A (DC)1.7V @ 10ANo Recovery Time > 500mA (Io)0ns350µA @ 600V350pF @ 0V, 1MHzThrough HoleTO-220-2PG-TO220-2-2-55°C ~ 175°C
SIDC01D120H6
 Infineon Technologies DIODE GEN PURP 1.2KV 600MA WAFER Discontinued at -Standard1200V600mA (DC)1.6V @ 600mAStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface MountDieSawn on foil-55°C ~ 150°C
SIDC01D60C6
 Infineon Technologies DIODE GEN PURP WAFER Discontinued at -Standard
-
-
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Surface MountDieSawn on foil-55°C ~ 150°C
SIDC02D60C6X1SA4
 Infineon Technologies DIODE GEN PURP 600V 6A WAFER Discontinued at -Standard600V6A (DC)1.95V @ 6AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface MountDieSawn on foil-40°C ~ 175°C
SIDC02D60F6X1SA1
 Infineon Technologies DIODE GEN PURP 600V 3A WAFER Discontinued at -Standard600V3A (DC)1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface MountDieSawn on foil-40°C ~ 150°C
SIDC03D120F6X1SA1
 Infineon Technologies DIODE GEN PURP 1.2KV 2A WAFER Discontinued at -Standard1200V2A (DC)2.1V @ 2AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface MountDieSawn on foil-55°C ~ 150°C
SIDC03D120H6X1SA3
 Infineon Technologies DIODE GEN PURP 1.2KV 3A WAFER Discontinued at -Standard1200V3A (DC)1.6V @ 3AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface MountDieSawn on foil-55°C ~ 150°C
SIDC03D60C6X1SA2
 Infineon Technologies DIODE GEN PURP 600V 10A WAFER Discontinued at -Standard600V10A (DC)1.95V @ 10AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface MountDieSawn on foil-40°C ~ 175°C
SIDC03D60F6X1SA2
 Infineon Technologies DIODE GEN PURP 600V 6A WAFER Discontinued at -Standard600V6A (DC)1.6V @ 6AFast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface MountDieSawn on foil-40°C ~ 150°C
SIDC04D60F6X1SA3
 Infineon Technologies DIODE GEN PURP 600V 9A WAFER Discontinued at -Standard600V9A (DC)1.6V @ 9AFast Recovery =< 500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface MountDieSawn on foil-40°C ~ 150°C
SIDC05D60C6X1SA2
 Infineon Technologies DIODE GEN PURP 600V 15A WAFER Discontinued at -Standard600V15A (DC)1.95V @ 15AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 600V
-
Surface MountDieSawn on foil-40°C ~ 175°C
SIDC06D120E6X1SA3
 Infineon Technologies DIODE GEN PURP 1.2KV 5A WAFER Discontinued at -Standard1200V5A (DC)1.9V @ 5AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface MountDieSawn on foil-55°C ~ 150°C
SIDC06D120F6X1SA2
 Infineon Technologies DIODE GEN PURP 1.2KV 5A WAFER Discontinued at -Standard1200V5A (DC)2.1V @ 5AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface MountDieSawn on foil-55°C ~ 150°C
SIDC06D120H6X1SA4
 Infineon Technologies DIODE GEN PURP 1.2KV 7.5A WAFER Discontinued at -Standard1200V7.5A (DC)1.6V @ 7.5AStandard Recovery >500ns, > 200mA (Io)
-
27µA @ 1200V
-
Surface MountDieSawn on foil-55°C ~ 150°C
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