Infineon Technologies Distributor - Diodes - Rectifiers - Single - BAS40E6433HTMA1 BAS4002LE6327XTMA1 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS40E6433HTMA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SOT23-3	Active	Schottky	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	100ps	1µA @ 30V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-55°C ~ 150°C
BAS4002LE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 40V 120MA TSLP-2	Active	Schottky	40V	120mA (DC)	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	100ps	1µA @ 30V	5pF @ 0V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 150°C
BAS7002LE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 70V 70MA TSLP-2	Active	Schottky	70V	70mA (DC)	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	100ps	100nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 125°C
BAS5202VH6433XTMA1	Infineon Technologies	DIODE SCHOTTKY 45V 750MA SC79-2	Active	Schottky	45V	750mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 45V	10pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAT5402LRHE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 200MA TSLP-2	Active	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	150°C (Max)
BAS3005S02LRHE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 30V 500MA TSLP-2	Active	Schottky	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	15pF @ 5V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 150°C
BAW78DH6327XTSA1	Infineon Technologies	DIODE GP 400V 1A SOT89	Last Time Buy	Standard	400V	1A (DC)	1.6V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1µs	1µA @ 400V	10pF @ 0V, 1MHz	Surface Mount	TO-243AA	PG-SOT89	150°C (Max)
BAT1502LSE6433XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSSLP-2	Active	Schottky	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	0201 (0603 Metric)	PG-TSSLP-2-3	-55°C ~ 150°C
BAT1502ELE6327XTMA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA TSLP-2	Active	Schottky	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	350pF @ 0V, 1MHz	Surface Mount	2-XDFN	PG-TSLP-2-19	-55°C ~ 150°C
IDD06E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 14.7A TO252	Active	Standard	600V	14.7A (DC)	2V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	70ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD09E60BUMA1	Infineon Technologies	DIODE GEN PURP 600V 19.3A TO252	Active	Standard	600V	19.3A (DC)	2V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
BAT2402ELSE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 4V 110MA SC79-2	Active	Schottky	4V	110mA (DC)	410mV @ 10mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 1V	230pF @ 0V, 1MHz	Surface Mount	0201 (0603 Metric)	PG-TSSLP-2-1	-55°C ~ 150°C
IDD15E60BUMA2	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO252	Active	Standard	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDL02G65C5XUMA2	Infineon Technologies	DIODE SCHOTTKY 650V 2A VSON-4	Active	Silicon Carbide Schottky	650V	2A (DC)	1.7V @ 2A	No Recovery Time > 500mA (Io)	0ns	35µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDK02G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 2A TO263-2	Active	Silicon Carbide Schottky	650V	2A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	330µA @ 650V	70pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDK03G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO263-2	Active	Silicon Carbide Schottky	650V	3A (DC)	1.8V @ 3A	No Recovery Time > 500mA (Io)	0ns	500µA @ 650V	100pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDH02G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 2A TO220-2	Active	Silicon Carbide Schottky	650V	2A (DC)	1.7V @ 2A	No Recovery Time > 500mA (Io)	0ns	-	70pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
IDD03SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 3A TO252-3	Active	Silicon Carbide Schottky	600V	3A (DC)	2.3V @ 3A	No Recovery Time > 500mA (Io)	0ns	15µA @ 600V	60pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDP15E60XKSA1	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO220	Active	Standard	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDB15E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 29.2A TO263	Active	Standard	600V	29.2A (DC)	2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	87ns	50µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3	-40°C ~ 175°C
IDK04G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 4A TO263-2	Active	Silicon Carbide Schottky	650V	4A (DC)	1.8V @ 4A	No Recovery Time > 500mA (Io)	0ns	670µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDP20E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 40A TO220-2	Active	Standard	650V	40A (DC)	2.2V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	32ns	40µA @ 650V	-	Through Hole	TO-220-2	PG-TO220-2-1	-40°C ~ 175°C
IDL04G65C5XUMA2	Infineon Technologies	DIODE SCHOTTKY 650V 4A VSON-4	Active	Silicon Carbide Schottky	650V	4A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	70µA @ 650V	130pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 175°C
IDP12E120XKSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 28A TO220-2	Active	Standard	1200V	28A (DC)	2.15V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 150°C
IDH03SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 3A TO220-2	Active	Silicon Carbide Schottky	600V	3A (DC)	2.3V @ 3A	No Recovery Time > 500mA (Io)	0ns	15µA @ 600V	60pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDD04SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 4A TO252-3	Active	Silicon Carbide Schottky	600V	4A (DC)	2.3V @ 4A	No Recovery Time > 500mA (Io)	0ns	25µA @ 600V	80pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
SIDC06D120H8X1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 7.5A WAFER	Active	Standard	1200V	7.5A (DC)	1.97V @ 7.5A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDK05G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 5A TO263-2	Active	Silicon Carbide Schottky	650V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	830µA @ 650V	160pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDP30E65D2XKSA1	Infineon Technologies	DIODE GEN PURP 650V 60A TO220-2	Active	Standard	650V	60A (DC)	2.2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	40µA @ 650V	-	Through Hole	TO-220-2	PG-TO220-2-1	-40°C ~ 175°C
IDB30E60ATMA1	Infineon Technologies	DIODE GEN PURP 600V 52.3A TO263	Active	Standard	600V	52.3A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	126ns	50µA @ 600V	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-3-2	-40°C ~ 175°C
IDP18E120XKSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 31A TO220-2	Active	Standard	1200V	31A (DC)	2.15V @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	195ns	100µA @ 1200V	-	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 150°C
IDP1301GXUMA1	Infineon Technologies	DIODE GEN PURP DSO-19	Active	-	-	-	-	-	-	-	-	-	-	-	-
IDL06G65C5XUMA2	Infineon Technologies	DIODE SCHOTTKY 650V 6A VSON-4	Active	Silicon Carbide Schottky	650V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	110µA @ 650V	190pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDP30E60XKSA1	Infineon Technologies	DIODE GEN PURP 600V 52.3A TO220	Active	Standard	600V	52.3A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	126ns	50µA @ 600V	-	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDK06G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 6A TO263-2	Active	Silicon Carbide Schottky	650V	6A (DC)	1.8V @ 6A	No Recovery Time > 500mA (Io)	0ns	1.1mA @ 650V	190pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDC08D120T6MX1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 10A WAFER	Active	Standard	1200V	10A	2.05V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	2.7µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDD05SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 5A TO252-3	Active	Silicon Carbide Schottky	600V	5A (DC)	2.3V @ 5A	No Recovery Time > 500mA (Io)	0ns	30µA @ 600V	110pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDH05G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 5A TO220-2	Active	Silicon Carbide Schottky	650V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	90µA @ 650V	160pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
GLHUELSE1626XPSA1	Infineon Technologies	DUMMY 57	Active	-	-	-	-	-	-	-	-	-	-	-	-
GLHUELSE1627XPSA1	Infineon Technologies	DUMMY 57	Active	-	-	-	-	-	-	-	-	-	-	-	-
IDH04SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 4A TO220-2	Active	Silicon Carbide Schottky	600V	4A (DC)	2.3V @ 4A	No Recovery Time > 500mA (Io)	0ns	25µA @ 600V	80pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDD06SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO252-3	Active	Silicon Carbide Schottky	600V	6A (DC)	2.3V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDC10D120T6MX1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER	Active	Standard	1200V	15A	2.05V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	3.5µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDL08G65C5XUMA2	Infineon Technologies	DIODE SCHOTTKY 650V 8A VSON-4	Active	Silicon Carbide Schottky	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	140µA @ 650V	250pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
SIDC10D120H8X1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER	Active	Standard	1200V	15A (DC)	1.97V @ 7.5A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDW30E60FKSA1	Infineon Technologies	DIODE GEN PURP 600V 60A TO247-3	Active	Standard	600V	60A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	143ns	40µA @ 600V	-	Through Hole	TO-247-3	TO-247-3	-40°C ~ 175°C
IDW30E60AFKSA1	Infineon Technologies	DIODE GEN PURP 600V 60A TO247-3	Not For New Designs	Standard	600V	60A (DC)	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	143ns	40µA @ 600V	-	Through Hole	TO-247-3	TO-247-3	-40°C ~ 175°C
IDH05SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 5A TO220-2	Active	Silicon Carbide Schottky	600V	5A (DC)	2.3V @ 5A	No Recovery Time > 500mA (Io)	0ns	30µA @ 600V	110pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDK08G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 8A TO263-2	Active	Silicon Carbide Schottky	650V	8A (DC)	1.8V @ 8A	No Recovery Time > 500mA (Io)	0ns	-	250pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDP23011XUMA1	Infineon Technologies	AC/DC DIGITAL PLATFORM	Active	-	-	-	-	-	-	-	-	-	-	-	-

Manufacturers for Diodes - Rectifiers - Single