Infineon Technologies Distributor - Diodes - Rectifiers - Single - SIDC06D60AC6X1SA1 SIDC06D60C6 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC06D60AC6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER	Discontinued at -	Standard	600V	20A (DC)	1.95V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC06D60C6	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER	Discontinued at -	Standard	600V	20A (DC)	1.95V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC06D60E6X1SA3	Infineon Technologies	DIODE GEN PURP 600V 10A WAFER	Discontinued at -	Standard	600V	10A (DC)	1.25V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC06D60F6X1SA3	Infineon Technologies	DIODE GEN PURP 600V 15A WAFER	Discontinued at -	Standard	600V	15A (DC)	1.6V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC07D60AF6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 22.5A WAFER	Discontinued at -	Standard	600V	22.5A (DC)	1.6V @ 22.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC07D60E6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 15A WAFER	Discontinued at -	Standard	600V	15A (DC)	1.25V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	250µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC07D60F6X1SA2	Infineon Technologies	DIODE GEN PURP 600V 22.5A WAFER	Discontinued at -	Standard	600V	22.5A (DC)	1.6V @ 22.5A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC08D120F6X1SA3	Infineon Technologies	DIODE GEN PURP 1.2KV 7A WAFER	Discontinued at -	Standard	1200V	7A (DC)	2.1V @ 7A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC08D120H6X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 10A WAFER	Discontinued at -	Standard	1200V	10A (DC)	1.6V @ 10A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC08D60C6	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER	Discontinued at -	Standard	600V	30A (DC)	1.95V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC08D60C6Y	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER	Discontinued at -	Standard	600V	30A (DC)	1.95V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC09D60E6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER	Discontinued at -	Standard	600V	20A (DC)	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC09D60E6 UNSAWN	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER	Discontinued at -	Standard	600V	20A (DC)	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC09D60E6YX1SA1	Infineon Technologies	DIODE GEN PURP 600V 20A WAFER	Discontinued at -	Standard	600V	20A (DC)	1.7V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC09D60F6X1SA2	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER	Discontinued at -	Standard	600V	30A (DC)	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC10D120H6X1SA5	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER	Discontinued at -	Standard	1200V	15A (DC)	1.6V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC110D170HX1SA2	Infineon Technologies	DIODE GEN PURP 1.7KV 200A WAFER	Discontinued at -	Standard	1700V	200A (DC)	1.8V @ 200A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC11D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 4A WAFER	Discontinued at -	Silicon Carbide Schottky	600V	4A (DC)	1.9V @ 4A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	150pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC14D120E6X1SA4	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER	Discontinued at -	Standard	1200V	15A (DC)	1.9V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D120F6X1SA3	Infineon Technologies	DIODE GEN PURP 1.2KV 15A WAFER	Discontinued at -	Standard	1200V	15A (DC)	2.1V @ 15A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D120H6X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER	Discontinued at -	Standard	1200V	25A (DC)	1.6V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60C6	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER	Discontinued at -	Standard	600V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC14D60C6Y	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER	Discontinued at -	Standard	600V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC14D60E6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER	Discontinued at -	Standard	600V	30A (DC)	1.25V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60E6YX1SA1	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER	Discontinued at -	Standard	600V	30A (DC)	1.25V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC14D60F6X1SA2	Infineon Technologies	DIODE GEN PURP 600V 45A WAFER	Discontinued at -	Standard	600V	45A (DC)	1.6V @ 45A	Fast Recovery =< 500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC161D170HX1SA2	Infineon Technologies	DIODE GEN PURP 1.7KV 300A WAFER	Discontinued at -	Standard	1700V	300A (DC)	1.8V @ 300A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC16D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 5A WAFER	Discontinued at -	Silicon Carbide Schottky	600V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	170pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC19D60SIC3	Infineon Technologies	DIODE SCHOTTKY 600V 6A WAFER	Discontinued at -	Silicon Carbide Schottky	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	200µA @ 600V	300pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC20D60C6	Infineon Technologies	DIODE GEN PURP 600V 75A WAFER	Discontinued at -	Standard	600V	75A (DC)	1.9V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC23D120E6X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER	Discontinued at -	Standard	1200V	25A (DC)	1.9V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120F6X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER	Discontinued at -	Standard	1200V	25A (DC)	2.1V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D120H6X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER	Discontinued at -	Standard	1200V	35A (DC)	1.6V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D60E6X1SA4	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER	Discontinued at -	Standard	600V	50A (DC)	1.25V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC23D60E6YX1SA1	Infineon Technologies	DIODE GEN PURP 600V 50A WAFER	Discontinued at -	Standard	600V	50A (DC)	1.25V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC24D30SIC3	Infineon Technologies	DIODE SILICON 300V 10A WAFER	Discontinued at -	Silicon Carbide Schottky	300V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	200µA @ 300V	600pF @ 1V, 1MHz	Surface Mount	Die	Sawn on foil	-55°C ~ 175°C
SIDC26D60C6	Infineon Technologies	DIODE GEN PURP 600V 100A WAFER	Discontinued at -	Standard	600V	100A (DC)	1.9V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC30D120E6X1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER	Discontinued at -	Standard	1200V	35A (DC)	1.9V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120F6X1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER	Discontinued at -	Standard	1200V	35A (DC)	2.1V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D120H6X1SA4	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER	Discontinued at -	Standard	1200V	50A (DC)	1.6V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC30D60E6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 75A WAFER	Discontinued at -	Standard	600V	75A (DC)	1.25V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC32D170HX1SA3	Infineon Technologies	DIODE GEN PURP 1.7KV 50A WAFER	Discontinued at -	Standard	1700V	50A (DC)	1.8V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC38D60C6X1SA3	Infineon Technologies	DIODE GEN PURP 600V 150A WAFER	Discontinued at -	Standard	600V	150A (DC)	1.9V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC42D120E6X1SA4	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER	Discontinued at -	Standard	1200V	50A (DC)	1.9V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC42D120F6X1SA3	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER	Discontinued at -	Standard	1200V	50A (DC)	2.1V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC42D120H6X1SA3	Infineon Technologies	DIODE GEN PURP 1.2KV 75A WAFER	Discontinued at -	Standard	1200V	75A (DC)	1.6V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC42D170E6X1SA2	Infineon Technologies	DIODE GEN PURP 1.7KV 50A WAFER	Discontinued at -	Standard	1700V	50A (DC)	2.15V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 150°C
SIDC42D60E6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 100A WAFER	Discontinued at -	Standard	600V	100A (DC)	1.25V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC46D170HX1SA2	Infineon Technologies	DIODE GEN PURP 1.7KV 75A WAFER	Discontinued at -	Standard	1700V	75A (DC)	1.8V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1700V	-	Surface Mount	Die	Sawn on foil	-55°C ~ 150°C
SIDC50D60C6X1SA1	Infineon Technologies	DIODE GEN PURP 600V 200A WAFER	Discontinued at -	Standard	600V	200A (DC)	1.9V @ 200A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C

Manufacturers for Diodes - Rectifiers - Single