Infineon Technologies Distributor - Diodes - Rectifiers - Single - IDP2302XUMA1 IDK09G65C5XTMA2 - CHIPSIC

Part Number	Manufacturer / Brand	Brife Description	Part Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
IDP2302XUMA1	Infineon Technologies	AC/DC DIGITAL PLATFORM	Active	-	-	-	-	-	-	-	-	-	-	-	-
IDK09G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 9A TO263-2	Active	Silicon Carbide Schottky	650V	9A (DC)	1.8V @ 9A	No Recovery Time > 500mA (Io)	0ns	1.6mA @ 650V	270pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDL10G65C5XUMA2	Infineon Technologies	DIODE SCHOTTKY 650V 10A VSON-4	Active	Silicon Carbide Schottky	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDH06SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220-2	Active	Silicon Carbide Schottky	600V	6A (DC)	2.3V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDD08SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 8A TO252-3	Active	Silicon Carbide Schottky	600V	8A (DC)	2.1V @ 8A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDW50E60FKSA1	Infineon Technologies	DIODE GEN PURP 600V 80A TO247-3	Active	Standard	600V	80A (DC)	2V @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	115ns	40µA @ 600V	-	Through Hole	TO-247-3	PG-TO247-3	-40°C ~ 175°C
IDK10G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO263-2	Active	Silicon Carbide Schottky	650V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	-	300pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDC15D120T6MX1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER	Active	Standard	1200V	25A	2.05V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	5.2µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC14D120H8X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 25A WAFER	Active	Standard	1200V	25A (DC)	1.97V @ 25A	Standard Recovery >500ns, > 200mA (Io)	-	20µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDD09SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 9A TO252-3	Active	Silicon Carbide Schottky	600V	9A (DC)	2.1V @ 9A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDL12G65C5XUMA2	Infineon Technologies	DIODE SCHOTTKY 650V 12A VSON-4	Active	Silicon Carbide Schottky	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Surface Mount	4-PowerTSFN	PG-VSON-4	-55°C ~ 150°C
IDK12G65C5XTMA2	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO263-2	Active	Silicon Carbide Schottky	650V	12A (DC)	1.8V @ 12A	No Recovery Time > 500mA (Io)	0ns	-	360pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	PG-TO263-2	-55°C ~ 175°C
IDD10SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 10A TO252-3	Active	Silicon Carbide Schottky	600V	10A (DC)	2.1V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 600V	290pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDH08SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 8A TO220-2	Active	Silicon Carbide Schottky	600V	8A (DC)	2.1V @ 8A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDC21D120T6MX1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER	Active	Standard	1200V	35A	2.05V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	7.7µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDH09SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 9A TO220-2	Active	Silicon Carbide Schottky	600V	9A (DC)	2.1V @ 9A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDD12SG60CXTMA2	Infineon Technologies	DIODE SCHOTTKY 600V 12A TO252-3	Active	Silicon Carbide Schottky	600V	12A (DC)	2.1V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
SIDC23D120H8X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 35A WAFER	Active	Standard	1200V	35A (DC)	1.97V @ 35A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDH10SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 10A TO220-2	Active	Silicon Carbide Schottky	600V	10A (DC)	2.1V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 600V	290pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDH12SG60CXKSA2	Infineon Technologies	DIODE SCHOTTKY 600V 12A TO220-2	Active	Silicon Carbide Schottky	600V	12A (DC)	2.1V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
IDC28D120T6MX1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER	Active	Standard	1200V	50A	2.05V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC30D120H8X1SA4	Infineon Technologies	DIODE GEN PURP 1.2KV 50A WAFER	Active	Standard	1200V	50A (DC)	1.97V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
GATELEADRD406XPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
GATELEADWH406XPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
IDC40D120T6MX1SA4	Infineon Technologies	DIODE GEN PURP 1.2KV 75A WAFER	Active	Standard	1200V	75A	2.05V @ 75A	Standard Recovery >500ns, > 200mA (Io)	-	14µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC42D120H8X1SA3	Infineon Technologies	DIODE GEN PURP 1.2KV 75A WAFER	Active	Standard	1200V	75A (DC)	1.97V @ 50A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDC05S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER	Active	-	-	-	-	-	-	-	-	Surface Mount	Die	Sawn on foil	-
IDW20G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 10A TO247-3	Active	Silicon Carbide Schottky	650V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	180µA @ 650V	300pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDC51D120T6MX1SA3	Infineon Technologies	DIODE GEN PURP 1.2KV 100A WAFER	Active	Standard	1200V	100A	2.05V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	18µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
SIDC53D120H8X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 100A WAFER	Active	Standard	1200V	100A (DC)	1.97V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDW24G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 12A TO247-3	Active	Silicon Carbide Schottky	650V	12A (DC)	1.7V @ 12A	No Recovery Time > 500mA (Io)	0ns	190µA @ 650V	360pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
GATELEADWHRD762XPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
GLPB3460G1K1457XPSA1	Infineon Technologies	THYR / DIODE MODULE DK	Active	-	-	-	-	-	-	-	-	-	-	-	-
GATELEAD28134XPSA1	Infineon Technologies	DUMMY 57	Active	-	-	-	-	-	-	-	-	-	-	-	-
GATELEADWHBU445XXPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
IDC73D120T6MX1SA2	Infineon Technologies	DIODE GEN PURP 1.2KV 150A WAFER	Active	Standard	1200V	150A	2.05V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	26µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDW32G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 16A TO247-3	Active	Silicon Carbide Schottky	650V	16A (DC)	1.7V @ 16A	No Recovery Time > 500mA (Io)	0ns	200µA @ 650V	470pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDC10S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER	Active	-	-	-	-	-	-	-	-	Surface Mount	Die	Sawn on foil	-
GATELEADWHRD394XXPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
GATELEADWHBN661XXPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
GATELEADWHBK750XXPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
SIDC105D120H8X1SA1	Infineon Technologies	DIODE GEN PURP 1.2KV 200A WAFER	Active	Standard	1200V	200A (DC)	1.41V @ 45A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 1200V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
IDW40G65C5BXKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 20A TO247-3	Active	Silicon Carbide Schottky	650V	20A (DC)	1.7V @ 20A	No Recovery Time > 500mA (Io)	0ns	210µA @ 650V	590pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
IDC15S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER	Active	-	-	-	-	-	-	-	-	Surface Mount	Die	Sawn on foil	-
GATELEAD1110008XPSA1	Infineon Technologies	HIGH POWER THYR / DIO	Active	-	-	-	-	-	-	-	-	-	-	-	-
GATELEADMPWHPK1258XXPSA1	Infineon Technologies	STD THYR/DIODEN DISC	Active	-	-	-	-	-	-	-	-	-	-	-	-
IDC20S120C5X1SA1	Infineon Technologies	IC DIODE EMITTER CTLR WAFER	Active	-	-	-	-	-	-	-	-	Surface Mount	Die	Sawn on foil	-
D650N02TXPSA1	Infineon Technologies	DIODE GEN PURP 200V 650A	Active	Standard	200V	650A	950mV @ 450A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 200V	-	Chassis Mount	DO-200AA, A-PUK	-	-40°C ~ 180°C
D650N06TXPSA1	Infineon Technologies	DIODE GEN PURP 600V 650A	Active	Standard	600V	650A	950mV @ 450A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 600V	-	Chassis Mount	DO-200AA, A-PUK	-	-40°C ~ 180°C
D970N06TXPSA1	Infineon Technologies	DIODE GEN PURP 600V 970A	Active	Standard	600V	970A	970mV @ 750A	Standard Recovery >500ns, > 200mA (Io)	-	20mA @ 600V	-	Chassis Mount	DO-200AA, A-PUK	-	-40°C ~ 180°C

Manufacturers for Diodes - Rectifiers - Single