Numero di parte Produttore / Marca Breve descrizione Stato parteTipo FETTecnologiaDrain to Source Voltage (Vdss)Corrente - Scarico continuo (Id) @ 25 ° CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs (th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (massimo)Capacità di ingresso (Ciss) (Max) @ VdsCaratteristica FETDissipazione di potenza (max)temperatura di esercizioTipo di montaggioPacchetto dispositivo fornitorePacchetto / caso
GeneSiC Semiconductor TRANSISTOR SJT 1.2KV 50A Active
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SiC (Silicon Carbide Junction Transistor)1200V100A (Tc)
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25 mOhm @ 50A
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7209pF @ 800V
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583W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 1700V 8A TO-247AB Active
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SiC (Silicon Carbide Junction Transistor)1700V8A (Tc) (90°C)
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250 mOhm @ 8A
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48W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 1200V 15A Active
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SiC (Silicon Carbide Junction Transistor)1200V15A (Tc)
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106W (Tc)175°C (TJ)Surface MountD2PAK (7-Lead)TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GeneSiC Semiconductor TRANSISTOR SJT 1200V 25A Active
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SiC (Silicon Carbide Junction Transistor)1200V25A (Tc)
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120 mOhm @ 10A
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1403pF @ 800V
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170W (Tc)175°C (TJ)Surface Mount
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GeneSiC Semiconductor TRANSISTOR SJT 1200V 45A Active
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SiC (Silicon Carbide Junction Transistor)1200V45A (Tc)
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60 mOhm @ 20A
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3091pF @ 800V
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282W (Tc)175°C (TJ)Surface MountD2PAK (7-Lead)TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GeneSiC Semiconductor TRANSISTOR SJT 1700V 4A TO-247AB Active
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SiC (Silicon Carbide Junction Transistor)1700V4A (Tc) (95°C)
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480 mOhm @ 4A
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106W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 100V 9A Active
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SiC (Silicon Carbide Junction Transistor)100V9A (Tc)
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240 mOhm @ 5A
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20W (Tc)-55°C ~ 225°C (TJ)Through HoleTO-46TO-46-3
GeneSiC Semiconductor TRANSISTOR SJT 300V 9A Active
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SiC (Silicon Carbide Junction Transistor)300V9A (Tc)
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240 mOhm @ 5A
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20W (Tc)-55°C ~ 225°C (TJ)Through HoleTO-46TO-46-3
GeneSiC Semiconductor TRANSISTOR SJT 1200V 160A SOT227 Active
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SiC (Silicon Carbide Junction Transistor)1200V160A (Tc)
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10 mOhm @ 100A
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14400pF @ 800V
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535W (Tc)-55°C ~ 175°C (TJ)Chassis MountSOT-227SOT-227-4, miniBLOC
GeneSiC Semiconductor TRANSISTOR SJT 1200V 25A TO263-7 Active
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SiC (Silicon Carbide Junction Transistor)1200V25A (Tc)
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100 mOhm @ 10A
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1403pF @ 800V
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170W (Tc)175°C (TJ)Surface MountD2PAK (7-Lead)TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
GeneSiC Semiconductor TRANSISTOR SJT 1200V 45A TO247 Active
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SiC (Silicon Carbide Junction Transistor)1200V45A (Tc)
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50 mOhm @ 20A
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3091pF @ 800V
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282W (Tc)-55°C ~ 175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 600V 100A Active
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SiC (Silicon Carbide Junction Transistor)600V100A (Tc)
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25 mOhm @ 50A
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769W (Tc)-55°C ~ 225°C (TJ)Through HoleTO-258TO-258-3, TO-258AA
GeneSiC Semiconductor TRANSISTOR SJT 1700V 16A TO-247AB Obsolete
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SiC (Silicon Carbide Junction Transistor)1700V16A (Tc) (90°C)
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110 mOhm @ 16A
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282W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 650V 4A TO-257 Obsolete
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SiC (Silicon Carbide Junction Transistor)650V4A (Tc) (165°C)
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415 mOhm @ 4A
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324pF @ 35V
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47W (Tc)-55°C ~ 225°C (TJ)Through HoleTO-257TO-257-3
GeneSiC Semiconductor TRANSISTOR SJT 650V 4A TO276 Obsolete
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SiC (Silicon Carbide Junction Transistor)650V4A (Tc) (165°C)
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415 mOhm @ 4A
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324pF @ 35V
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125W (Tc)-55°C ~ 225°C (TJ)Surface MountTO-276TO-276AA
GeneSiC Semiconductor TRANSISTOR SJT 650V 7A TO-257 Obsolete
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SiC (Silicon Carbide Junction Transistor)650V7A (Tc) (165°C)
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170 mOhm @ 7A
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720pF @ 35V
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80W (Tc)-55°C ~ 225°C (TJ)Through HoleTO-257TO-257-3
GeneSiC Semiconductor TRANSISTOR SJT 650V 8A TO276 Obsolete
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SiC (Silicon Carbide Junction Transistor)650V8A (Tc) (158°C)
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170 mOhm @ 8A
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720pF @ 35V
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200W (Tc)-55°C ~ 225°C (TJ)Surface MountTO-276TO-276AA
GeneSiC Semiconductor TRANSISTOR SJT 650V 15A TO-257 Obsolete
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SiC (Silicon Carbide Junction Transistor)650V15A (Tc) (155°C)
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105 mOhm @ 15A
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1534pF @ 35V
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172W (Tc)-55°C ~ 225°C (TJ)Through HoleTO-257TO-257-3
GeneSiC Semiconductor TRANSISTOR SJT 650V 16A TO276 Obsolete
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SiC (Silicon Carbide Junction Transistor)650V16A (Tc) (155°C)
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105 mOhm @ 16A
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1534pF @ 35V
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330W (Tc)-55°C ~ 225°C (TJ)Surface MountTO-276TO-276AA
GeneSiC Semiconductor TRANSISTOR SJT 1200V 3A TO-247AB Obsolete
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SiC (Silicon Carbide Junction Transistor)1200V3A (Tc) (95°C)
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460 mOhm @ 3A
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15W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 1200V 6A TO-247AB Obsolete
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SiC (Silicon Carbide Junction Transistor)1200V6A (Tc) (90°C)
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220 mOhm @ 6A
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175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 1200V 5A Obsolete
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SiC (Silicon Carbide Junction Transistor)1200V5A (Tc)
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280 mOhm @ 5A
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106W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 1.2KV 10A Obsolete
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SiC (Silicon Carbide Junction Transistor)1200V10A (Tc)
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140 mOhm @ 10A
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170W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 1.2KV 20A Obsolete
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SiC (Silicon Carbide Junction Transistor)1200V20A (Tc)
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70 mOhm @ 20A
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282W (Tc)175°C (TJ)Through HoleTO-247ABTO-247-3
GeneSiC Semiconductor TRANSISTOR SJT 1.7KV 100A Obsolete
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SiC (Silicon Carbide Junction Transistor)1700V100A (Tc)
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25 mOhm @ 50A
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583W (Tc)175°C (TJ)Through HoleTO-247TO-247-3
GeneSiC Semiconductor TRANSISTOR 1200V 100A TO263-7 Obsolete
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GeneSiC Semiconductor TRANSISTOR SJT 1700V 160A SOT227 Obsolete
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SiC (Silicon Carbide Junction Transistor)1700V160A (Tc)
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10 mOhm @ 100A
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14400pF @ 800V
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535W (Tc)-55°C ~ 175°C (TJ)Chassis MountSOT-227SOT-227-4, miniBLOC