MT3S113P(TE12L,F) Toshiba Semiconductor and Storage Distributor
| Manufacturer Part Number | MT3S113P(TE12L,F) |
|---|---|
| Manufacturer / Brand | Toshiba Semiconductor and Storage |
| Available Quantity | 93910 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | RF SIGE HETEROJUNCTION BIPOLAR N |
| Product Category | Transistors - Bipolar (BJT) - RF |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | MT3S113P(TE12L,F).pdf |
Please fill the below inquiry form, we will reply you the quotation for MT3S113P(TE12L,F) within 24 hours.
- Part Number
- MT3S113P(TE12L,F)
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- Transistor Type
- NPN
- Voltage - Collector Emitter Breakdown (Max)
- 5.3V
- Frequency - Transition
- 7.7GHz
- Noise Figure (dB Typ @ f)
- 1.45dB @ 1GHz
- Gain
- 10.5dB
- Power - Max
- 1.6W
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 30mA, 5V
- Current - Collector (Ic) (Max)
- 100mA
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Surface Mount
- Package / Case
- TO-243AA
- Supplier Device Package
- PW-MINI
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- MT3S113P(TE12L,F)
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|---|---|---|
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