Manufacturer Part NumberMT3S111(TE85L,F)
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity75190 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionRF SIGE HETEROJUNCTION BIPOLAR N
Product CategoryTransistors - Bipolar (BJT) - RF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download MT3S111(TE85L,F).pdf

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Part Number
MT3S111(TE85L,F)
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
6V
Frequency - Transition
11.5GHz
Noise Figure (dB Typ @ f)
1.2dB @ 1GHz
Gain
12dB
Power - Max
700mW
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini
Weight
Contact us
Application
Email for details
Replacement Part
MT3S111(TE85L,F)

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