Manufacturer Part NumberMT3S113TU,LF
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity18940 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionRF SIGE HETEROJUNCTION BIPOLAR N
Product CategoryTransistors - Bipolar (BJT) - RF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download MT3S113TU,LF.pdf

Please fill the below inquiry form, we will reply you the quotation for MT3S113TU,LF within 24 hours.

Part Number
MT3S113TU,LF
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
5.3V
Frequency - Transition
11.2GHz
Noise Figure (dB Typ @ f)
1.45dB @ 1GHz
Gain
12.5dB
Power - Max
900mW
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 30mA, 5V
Current - Collector (Ic) (Max)
100mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Leads
Supplier Device Package
UFM
Weight
Contact us
Application
Email for details
Replacement Part
MT3S113TU,LF

Related Components made by Toshiba Semiconductor and Storage

Related Keywords For "MT3S"

Part Number Manufacturer Description
MT3S111(TE85L,F) Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N
MT3S111P(TE12L,F) Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N
MT3S113(TE85L,F) Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N
MT3S113P(TE12L,F) Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N
MT3S113TU,LF Toshiba Semiconductor and Storage RF SIGE HETEROJUNCTION BIPOLAR N
MT3S16U(TE85L,F) Toshiba Semiconductor and Storage TRANSISTOR RF NPN 5V 1GHZ USM
MT3S20P(TE12L,F) Toshiba Semiconductor and Storage TRANSISTOR RF NPN 12V 1GHZ PW-MINI
MT3S20TU(TE85L) Toshiba Semiconductor and Storage TRANSISTOR RF NPN 7GHZ 80MA UFM