Part Number Manufacturer / Brand Brife Description Part StatusFET TypeTechnologyDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsFET FeaturePower Dissipation (Max)Operating TemperatureMounting TypeSupplier Device PackagePackage / Case
Toshiba Semiconductor and Storage X34 PB-F SMALL LOW ON RESISTANCE ActiveP-ChannelMOSFET (Metal Oxide)12V5.4A (Ta)1.2V, 4.5V17 mOhm @ 5A, 4.5V1V @ 1mA33nC @ 4.5V±6V2700pF @ 10V
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500mW (Ta)150°CSurface MountUFM3-SMD, Flat Leads
Toshiba Semiconductor and Storage MOSFET P-CH 20V 5A 6WCSP ActiveP-ChannelMOSFET (Metal Oxide)20V5A (Ta)2.5V, 8.5V31 mOhm @ 3A, 8.5V1.2V @ 1mA, 3V9.8nC @ 4.5V±12V870pF @ 10V
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1.2W (Ta)150°C (TJ)Surface Mount
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6-UFBGA, WLCSP
Toshiba Semiconductor and Storage MOSFET P-CH 20V 36A 8TSON ADV ActiveP-ChannelMOSFET (Metal Oxide)20V36A (Tc)2.5V, 4.5V4.7 mOhm @ 18A, 4.5V1.2V @ 1mA65nC @ 5V±12V4300pF @ 10V
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42W (Tc)150°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 60V 17A 8TSON ActiveN-ChannelMOSFET (Metal Oxide)60V17A (Tc)4.5V, 10V11.4 mOhm @ 8.5A, 10V2.5V @ 200µA23nC @ 10V±20V2000pF @ 30V
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700mW (Ta), 30W (Tc)150°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 30V 63A 8TSON ActiveN-ChannelMOSFET (Metal Oxide)30V40A (Tc)4.5V, 10V4.3 mOhm @ 20A, 10V2.3V @ 200µA14.8nC @ 10V±20V1400pF @ 15V
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700mW (Ta), 34W (Tc)150°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 80V 40A 8TSON ActiveN-ChannelMOSFET (Metal Oxide)80V18A (Tc)10V13.3 mOhm @ 9A, 10V4V @ 200µA18nC @ 10V±20V1600pF @ 40V
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700mW (Ta), 42W (Tc)150°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR ActiveN-ChannelMOSFET (Metal Oxide)30V80A (Tc)4.5V, 10V1.2 mOhm @ 80A, 10V10V @ 10µA41nC @ 10V±20V3900pF @ 15V
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104W (Tc)175°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 30V 60A 8-SOP ActiveN-ChannelMOSFET (Metal Oxide)30V60A (Ta)4.5V, 10V1.4 mOhm @ 30A, 10V2.3V @ 500µA46nC @ 10V±20V4400pF @ 15V
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1.6W (Ta), 64W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 600V 11.5A DPAK ActiveN-ChannelMOSFET (Metal Oxide)600V11.5A (Tc)10V290 mOhm @ 5.8A, 10V4V @ 450µA25nC @ 10V±30V730pF @ 300V
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100W (Tc)150°C (TJ)Surface MountDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage X35 PB-F POWER MOSFET TRANSISTOR ActiveN-ChannelMOSFET (Metal Oxide)30V150A (Tc)4.5V, 10V
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2.1V @ 500µA80nC @ 10V±20V7540pF @ 15V
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132W (Tc)175°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N CH 60V 60A SOP ADV ActiveN-ChannelMOSFET (Metal Oxide)60V60A (Tc)6.5V, 10V2.3 mOhm @ 30A, 10V4V @ 1mA72nC @ 10V±20V6100pF @ 30V
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1.6W (Ta), 78W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 600V 6A TO220SIS ActiveN-ChannelMOSFET (Metal Oxide)600V6A (Ta)10V1.25 Ohm @ 3A, 10V4V @ 1mA16nC @ 10V±30V800pF @ 25V
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40W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 600V 13A TO220SIS ActiveN-ChannelMOSFET (Metal Oxide)600V13A (Ta)10V430 mOhm @ 6.5A, 10V4V @ 1mA40nC @ 10V±30V2300pF @ 25V
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50W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 900V TO-3PN ActiveN-ChannelMOSFET (Metal Oxide)900V9A (Ta)10V1.3 Ohm @ 4.5A, 10V4V @ 900µA46nC @ 10V±30V2000pF @ 25V
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250W (Tc)150°C (TJ)Through HoleTO-3P(N)TO-3P-3, SC-65-3
Toshiba Semiconductor and Storage MOSFET N-CH 60V 0.17A ActiveN-ChannelMOSFET (Metal Oxide)60V170mA (Ta)4.5V, 10V3.9 Ohm @ 100mA, 10V2.1V @ 250µA0.35nC @ 4.5V±20V17pF @ 10V
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150mW (Ta)-55°C ~ 150°C (TJ)Surface MountSSMSC-75, SOT-416
Toshiba Semiconductor and Storage MOSFET P-CH 20V 0.25A CST3C ActiveP-ChannelMOSFET (Metal Oxide)20V250mA (Ta)1.2V, 4.5V1.4 Ohm @ 150mA, 4.5V1V @ 100µA
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±10V42pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountCST3CSOT-1123
Toshiba Semiconductor and Storage MOSFET N-CH 20V 1.4A CST3 ActiveN-ChannelMOSFET (Metal Oxide)20V1.4A (Ta)1.5V, 4.5V235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V±8V55pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountCST3SC-101, SOT-883
Toshiba Semiconductor and Storage MOSFET NCH 20V 800MA CST3 ActiveN-ChannelMOSFET (Metal Oxide)20V800mA (Ta)1.5V, 4.5V235 mOhm @ 800mA, 4.5V1V @ 1mA1nC @ 4.5V±8V55pF @ 10V
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500mW (Ta)150°C (TA)Surface MountCST33-XFDFN
Toshiba Semiconductor and Storage MOSFET P CH 20V 2.6A ES6 ActiveP-ChannelMOSFET (Metal Oxide)20V2.6A (Ta)1.5V, 4.5V103 mOhm @ 1.5A, 4.5V1V @ 1mA4.7nC @ 4.5V±8V290pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountES6SOT-563, SOT-666
Toshiba Semiconductor and Storage MOSFET N-CH 40V 1.8A ES6 ActiveN-ChannelMOSFET (Metal Oxide)40V1.8A (Ta)1.8V, 8V195 mOhm @ 1A, 8V1.2V @ 1mA1.1nC @ 4.2V±12V130pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountES6SOT-563, SOT-666
Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A CST3B ActiveN-ChannelMOSFET (Metal Oxide)40V2A (Ta)1.8V, 8V215 mOhm @ 1A, 8V1.2V @ 1mA1.1nC @ 4.2V±12V130pF @ 10V
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1W (Ta)150°C (TJ)Surface MountCST3B3-SMD, No Lead
Toshiba Semiconductor and Storage MOSFET N-CH 40V 2A 6UDFN ActiveN-ChannelMOSFET (Metal Oxide)40V2A (Ta)1.8V, 8V185 mOhm @ 1A, 8V1.2V @ 1mA2.2nC @ 4.2V±12V130pF @ 10V
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1W (Ta)150°C (TJ)Surface Mount6-UDFN (2x2)6-UDFN Exposed Pad
Toshiba Semiconductor and Storage MOSFET N-CH 30V 9A UDFN6B ActiveN-ChannelMOSFET (Metal Oxide)30V9A (Ta)4.5V, 10V19.5 mOhm @ 4A, 10V2.5V @ 100µA4.8nC @ 4.5V±20V620pF @ 15V
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1.25W (Ta)150°C (TJ)Surface Mount6-UDFNB (2x2)6-WDFN Exposed Pad
Toshiba Semiconductor and Storage MOSFET N-CH 20V 3.2A ES6 ActiveN-ChannelMOSFET (Metal Oxide)20V3.2A (Ta)1.5V, 4.5V47 mOhm @ 2A, 4.5V1V @ 1mA10.8nC @ 4.5V±10V510pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountES6SOT-563, SOT-666
Toshiba Semiconductor and Storage MOSFET P CH 20V 3.4A ES6 ActiveP-ChannelMOSFET (Metal Oxide)20V3.4A (Ta)1.5V, 4.5V59 mOhm @ 3A, 4.5V1V @ 1mA10.4nC @ 4.5V±8V630pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountES6SOT-563, SOT-666
Toshiba Semiconductor and Storage MOSFET N-CH 30V 2.3A ES6 ActiveN-ChannelMOSFET (Metal Oxide)30V2.3A (Ta)1.8V, 4V85 mOhm @ 1.5A, 4V1V @ 1mA
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±12V270pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountES6 (1.6x1.6)SOT-563, SOT-666
Toshiba Semiconductor and Storage MOSFET N CH 30V 32A 8SOP ActiveN-ChannelMOSFET (Metal Oxide)30V32A (Ta)4.5V, 10V11 mOhm @ 5.5A, 10V2.3V @ 100µA7.5nC @ 10V±20V660pF @ 15V
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1.6W (Ta), 21W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 80V 9.6A 8TSON ActiveN-ChannelMOSFET (Metal Oxide)80V9.6A (Tc)10V30 mOhm @ 4.8A, 10V4V @ 100µA11nC @ 10V±20V920pF @ 40V
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700mW (Ta), 27W (Tc)150°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON ActiveN-ChannelMOSFET (Metal Oxide)60V26A (Tc)6.5V, 10V7.5 mOhm @ 13A, 10V4V @ 200µA22nC @ 10V±20V1800pF @ 30V
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700mW (Ta), 42W (Tc)150°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 40V 50A DP TO252-3 ActiveN-ChannelMOSFET (Metal Oxide)40V50A (Ta)4.5V, 10V8.7 mOhm @ 25A, 10V2.3V @ 500µA38nC @ 10V±20V2600pF @ 10V
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60W (Tc)150°C (TJ)Surface MountDPTO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N CH 60V 14A 8-SOP ADV ActiveN-ChannelMOSFET (Metal Oxide)60V14A (Ta)6.5V, 10V14 mOhm @ 7A, 10V4V @ 200µA16nC @ 10V±20V1300pF @ 30V
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1.6W (Ta), 32W (Tc)150°C (TJ)Surface Mount8-SOP Advance (5x5)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 30V 45A 8-TSON ActiveN-ChannelMOSFET (Metal Oxide)30V45A (Tc)4.5V, 10V2.7 mOhm @ 22.5A, 10V2.3V @ 300µA21nC @ 10V±20V2100pF @ 15V
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700mW (Ta), 42W (Tc)150°C (TJ)Surface Mount8-TSON Advance (3.3x3.3)8-PowerVDFN
Toshiba Semiconductor and Storage MOSFET N-CH 100V 7A DPAK ActiveN-ChannelMOSFET (Metal Oxide)100V7A (Ta)10V48 mOhm @ 3.5A, 10V4V @ 100µA7.1nC @ 10V±20V470pF @ 10V
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50W (Tc)175°C (TJ)Surface MountDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N-CH 100V 33A DPAK ActiveN-ChannelMOSFET (Metal Oxide)100V33A (Ta)10V9.7 mOhm @ 16.5A, 10V4V @ 500µA28nC @ 10V±20V2050pF @ 10V
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125W (Tc)175°C (TJ)Surface MountDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N-CH 600V 8A DPAK ActiveN-ChannelMOSFET (Metal Oxide)600V8A (Ta)10V560 mOhm @ 4A, 10V4.5V @ 400µA22nC @ 10V±30V590pF @ 300V
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80W (Tc)150°C (TJ)Surface MountDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N-CH 650V 6.8A DPAK ActiveN-ChannelMOSFET (Metal Oxide)650V6.8A (Ta)10V800 mOhm @ 3.4A, 10V3.5V @ 250µA15nC @ 10V±30V490pF @ 300V
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60W (Tc)150°C (TJ)Surface MountDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N CH 600V 5.4A DPAK ActiveN-ChannelMOSFET (Metal Oxide)600V5.4A (Ta)10V900 mOhm @ 2.7A, 10V3.7V @ 270µA10.5nC @ 10V±30V380pF @ 300VSuper Junction60W (Tc)150°C (TJ)Surface MountDPAKTO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N-CH 40V 65A DPAK ActiveN-ChannelMOSFET (Metal Oxide)40V65A (Ta)10V4.3 mOhm @ 32.5A, 10V2.5V @ 300µA39nC @ 10V±20V2550pF @ 10V
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107W (Tc)175°C (TJ)Surface MountDPAK+TO-252-3, DPak (2 Leads + Tab), SC-63
Toshiba Semiconductor and Storage MOSFET N-CH 600V 20A 5DFN ActiveN-ChannelMOSFET (Metal Oxide)600V20A (Ta)10V190 mOhm @ 10A, 10V4.5V @ 1mA55nC @ 10V±30V1800pF @ 300V
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156W (Tc)150°C (TJ)Surface Mount4-DFN-EP (8x8)4-VSFN Exposed Pad
Toshiba Semiconductor and Storage MOSFET N-CH 650V 5A TO-220SIS ActiveN-ChannelMOSFET (Metal Oxide)650V6A (Ta)10V1.11 Ohm @ 3A, 10V4V @ 1mA20nC @ 10V±30V1050pF @ 25V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 650V 13.7A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)650V13.7A (Ta)10V250 mOhm @ 6.9A, 10V3.5V @ 690µA35nC @ 10V±30V1300pF @ 300V
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130W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Toshiba Semiconductor and Storage MOSFET N-CH 100V 100A TO-220 ActiveN-ChannelMOSFET (Metal Oxide)100V100A (Tc)10V3.8 mOhm @ 50A, 10V4V @ 1mA140nC @ 10V±20V8800pF @ 50V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-247 ActiveN-ChannelMOSFET (Metal Oxide)600V25A (Ta)10V125 mOhm @ 7.5A, 10V3.5V @ 1.2mA40nC @ 10V±30V2400pF @ 300V
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180W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Toshiba Semiconductor and Storage MOSFET N-CH 600V 25A TO-220SIS ActiveN-ChannelMOSFET (Metal Oxide)600V25A (Ta)10V140 mOhm @ 7.5A, 10V4.5V @ 1.2mA60nC @ 10V±30V2400pF @ 300V
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45W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 80V 100A TO220 ActiveN-ChannelMOSFET (Metal Oxide)80V100A (Ta)10V3.2 mOhm @ 50A, 10V4V @ 1mA130nC @ 10V±20V9000pF @ 40V
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255W (Tc)150°C (TJ)Through HoleTO-220TO-220-3
Toshiba Semiconductor and Storage MOSFET N-CH 600V 38.8A TO-247 ActiveN-ChannelMOSFET (Metal Oxide)600V38.8A (Ta)10V65 mOhm @ 12.5A, 10V3.5V @ 1.9mA85nC @ 10V±30V4100pF @ 300VSuper Junction270W (Tc)150°C (TJ)Through HoleTO-247TO-247-3
Toshiba Semiconductor and Storage MOSFET N-CH 600V 39A TO220-3 ActiveN-ChannelMOSFET (Metal Oxide)600V38.8A (Ta)10V65 mOhm @ 19.4A, 10V3.7V @ 1.9mA110nC @ 10V±30V4100pF @ 300V
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50W (Tc)150°C (TJ)Through HoleTO-220SISTO-220-3 Full Pack
Toshiba Semiconductor and Storage MOSFET N-CH 60V 0.15A CST3C ActiveN-ChannelMOSFET (Metal Oxide)60V150mA (Ta)4.5V, 10V3.9 Ohm @ 100mA, 10V2.1V @ 250µA0.35nC @ 4.5V±20V17pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountCST3CSOT-1123
Toshiba Semiconductor and Storage MOSFET N-CH 20V 4.2A ActiveN-ChannelMOSFET (Metal Oxide)20V4.2A (Ta)1.5V, 4V28 mOhm @ 3A, 4V1V @ 1mA16.8nC @ 4V±10V1050pF @ 10V
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500mW (Ta)150°C (TJ)Surface MountUF66-SMD, Flat Leads
Toshiba Semiconductor and Storage MOSFET P CH 20V 6A 2-2AA1A ActiveP-ChannelMOSFET (Metal Oxide)20V6A (Ta)1.5V, 4.5V23.1 mOhm @ 4A, 4.5V1V @ 1mA24.8nC @ 4.5V±8V1800pF @ 10V
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1W (Ta)150°C (TJ)Surface Mount6-UDFNB (2x2)6-WDFN Exposed Pad
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