Manufacturer Part NumberTPN7R506NH,L1Q
Manufacturer / BrandToshiba Semiconductor and Storage
Available Quantity95150 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N-CH 60V 26A 8TSON
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download TPN7R506NH,L1Q.pdf

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Part Number
TPN7R506NH,L1Q
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6.5V, 10V
Rds On (Max) @ Id, Vgs
7.5 mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800pF @ 30V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 42W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.3x3.3)
Package / Case
8-PowerVDFN
Weight
Contact us
Application
Email for details
Replacement Part
TPN7R506NH,L1Q

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Part Number Manufacturer Description
TPN7R506NH,L1Q Toshiba Semiconductor and Storage MOSFET N-CH 60V 26A 8TSON