TPN1R603PL,L1Q Toshiba Semiconductor and Storage Distributor
| Manufacturer Part Number | TPN1R603PL,L1Q |
|---|---|
| Manufacturer / Brand | Toshiba Semiconductor and Storage |
| Available Quantity | 146580 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | X35 PB-F POWER MOSFET TRANSISTOR |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | TPN1R603PL,L1Q.pdf |
Please fill the below inquiry form, we will reply you the quotation for TPN1R603PL,L1Q within 24 hours.
- Part Number
- TPN1R603PL,L1Q
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs
- 1.2 mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id
- 10V @ 10µA
- Gate Charge (Qg) (Max) @ Vgs
- 41nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 3900pF @ 15V
- FET Feature
-
- Power Dissipation (Max)
- 104W (Tc)
- Operating Temperature
- 175°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- 8-TSON Advance (3.3x3.3)
- Package / Case
- 8-PowerVDFN
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- TPN1R603PL,L1Q
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