TPN4R712MD,L1Q Toshiba Semiconductor and Storage Distributor
| Manufacturer Part Number | TPN4R712MD,L1Q |
|---|---|
| Manufacturer / Brand | Toshiba Semiconductor and Storage |
| Available Quantity | 94810 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | MOSFET P-CH 20V 36A 8TSON ADV |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | TPN4R712MD,L1Q.pdf |
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- Part Number
- TPN4R712MD,L1Q
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- FET Type
- P-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs
- 4.7 mOhm @ 18A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs
- 65nC @ 5V
- Vgs (Max)
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds
- 4300pF @ 10V
- FET Feature
-
- Power Dissipation (Max)
- 42W (Tc)
- Operating Temperature
- 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- 8-TSON Advance (3.3x3.3)
- Package / Case
- 8-PowerVDFN
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- TPN4R712MD,L1Q
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|---|---|---|
| TPN4R203NC,L1Q | Toshiba Semiconductor and Storage | MOSFET N CH 30V 23A 8TSON-ADV |
| TPN4R303NL,L1Q | Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON |
| TPN4R712MD,L1Q | Toshiba Semiconductor and Storage | MOSFET P-CH 20V 36A 8TSON ADV |