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Toshiba Semiconductor and Storage |
X34 PB-F SMALL LOW ON RESISTANCE |
Active | P-Channel | MOSFET (Metal Oxide) | 12V | 5.4A (Ta) | 1.2V, 4.5V | 17 mOhm @ 5A, 4.5V | 1V @ 1mA | 33nC @ 4.5V | ±6V | 2700pF @ 10V | - | 500mW (Ta) | 150°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5A 6WCSP |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 5A (Ta) | 2.5V, 8.5V | 31 mOhm @ 3A, 8.5V | 1.2V @ 1mA, 3V | 9.8nC @ 4.5V | ±12V | 870pF @ 10V | - | 1.2W (Ta) | 150°C (TJ) | Surface Mount | - | 6-UFBGA, WLCSP |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 36A 8TSON ADV |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 2.5V, 4.5V | 4.7 mOhm @ 18A, 4.5V | 1.2V @ 1mA | 65nC @ 5V | ±12V | 4300pF @ 10V | - | 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 17A 8TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 17A (Tc) | 4.5V, 10V | 11.4 mOhm @ 8.5A, 10V | 2.5V @ 200µA | 23nC @ 10V | ±20V | 2000pF @ 30V | - | 700mW (Ta), 30W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 63A 8TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | ±20V | 1400pF @ 15V | - | 700mW (Ta), 34W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 40A 8TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 18A (Tc) | 10V | 13.3 mOhm @ 9A, 10V | 4V @ 200µA | 18nC @ 10V | ±20V | 1600pF @ 40V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 1.2 mOhm @ 80A, 10V | 10V @ 10µA | 41nC @ 10V | ±20V | 3900pF @ 15V | - | 104W (Tc) | 175°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 60A 8-SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Ta) | 4.5V, 10V | 1.4 mOhm @ 30A, 10V | 2.3V @ 500µA | 46nC @ 10V | ±20V | 4400pF @ 15V | - | 1.6W (Ta), 64W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 11.5A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 11.5A (Tc) | 10V | 290 mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 150A (Tc) | 4.5V, 10V | - | 2.1V @ 500µA | 80nC @ 10V | ±20V | 7540pF @ 15V | - | 132W (Tc) | 175°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 60A SOP ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6.5V, 10V | 2.3 mOhm @ 30A, 10V | 4V @ 1mA | 72nC @ 10V | ±20V | 6100pF @ 30V | - | 1.6W (Ta), 78W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 6A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 6A (Ta) | 10V | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 16nC @ 10V | ±30V | 800pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 13A TO220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Ta) | 10V | 430 mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 2300pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 900V TO-3PN |
Active | N-Channel | MOSFET (Metal Oxide) | 900V | 9A (Ta) | 10V | 1.3 Ohm @ 4.5A, 10V | 4V @ 900µA | 46nC @ 10V | ±30V | 2000pF @ 25V | - | 250W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.17A |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 150mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.25A CST3C |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 250mA (Ta) | 1.2V, 4.5V | 1.4 Ohm @ 150mA, 4.5V | 1V @ 100µA | - | ±10V | 42pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SOT-1123 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 1.4A CST3 |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.5V, 4.5V | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET NCH 20V 800MA CST3 |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235 mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 500mW (Ta) | 150°C (TA) | Surface Mount | CST3 | 3-XFDFN |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 2.6A ES6 |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 2.6A (Ta) | 1.5V, 4.5V | 103 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7nC @ 4.5V | ±8V | 290pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 1.8A ES6 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 1.8A (Ta) | 1.8V, 8V | 195 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A CST3B |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 215 mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | CST3B | 3-SMD, No Lead |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A 6UDFN |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 185 mOhm @ 1A, 8V | 1.2V @ 1mA | 2.2nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFN (2x2) | 6-UDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 9A UDFN6B |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta) | 4.5V, 10V | 19.5 mOhm @ 4A, 10V | 2.5V @ 100µA | 4.8nC @ 4.5V | ±20V | 620pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 3.2A ES6 |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 47 mOhm @ 2A, 4.5V | 1V @ 1mA | 10.8nC @ 4.5V | ±10V | 510pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 3.4A ES6 |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 3.4A (Ta) | 1.5V, 4.5V | 59 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | ±8V | 630pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 2.3A ES6 |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 2.3A (Ta) | 1.8V, 4V | 85 mOhm @ 1.5A, 4V | 1V @ 1mA | - | ±12V | 270pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 (1.6x1.6) | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | ±20V | 660pF @ 15V | - | 1.6W (Ta), 21W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 9.6A 8TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 9.6A (Tc) | 10V | 30 mOhm @ 4.8A, 10V | 4V @ 100µA | 11nC @ 10V | ±20V | 920pF @ 40V | - | 700mW (Ta), 27W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 26A 8TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 26A (Tc) | 6.5V, 10V | 7.5 mOhm @ 13A, 10V | 4V @ 200µA | 22nC @ 10V | ±20V | 1800pF @ 30V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 50A DP TO252-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Ta) | 4.5V, 10V | 8.7 mOhm @ 25A, 10V | 2.3V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 10V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DP | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 14A 8-SOP ADV |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta) | 6.5V, 10V | 14 mOhm @ 7A, 10V | 4V @ 200µA | 16nC @ 10V | ±20V | 1300pF @ 30V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A 8-TSON |
Active | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | ±20V | 2100pF @ 15V | - | 700mW (Ta), 42W (Tc) | 150°C (TJ) | Surface Mount | 8-TSON Advance (3.3x3.3) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 7A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 7A (Ta) | 10V | 48 mOhm @ 3.5A, 10V | 4V @ 100µA | 7.1nC @ 10V | ±20V | 470pF @ 10V | - | 50W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 33A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Ta) | 10V | 9.7 mOhm @ 16.5A, 10V | 4V @ 500µA | 28nC @ 10V | ±20V | 2050pF @ 10V | - | 125W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 8A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 560 mOhm @ 4A, 10V | 4.5V @ 400µA | 22nC @ 10V | ±30V | 590pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 6.8A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 6.8A (Ta) | 10V | 800 mOhm @ 3.4A, 10V | 3.5V @ 250µA | 15nC @ 10V | ±30V | 490pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 5.4A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 5.4A (Ta) | 10V | 900 mOhm @ 2.7A, 10V | 3.7V @ 270µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | Super Junction | 60W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 65A DPAK |
Active | N-Channel | MOSFET (Metal Oxide) | 40V | 65A (Ta) | 10V | 4.3 mOhm @ 32.5A, 10V | 2.5V @ 300µA | 39nC @ 10V | ±20V | 2550pF @ 10V | - | 107W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 20A 5DFN |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 190 mOhm @ 10A, 10V | 4.5V @ 1mA | 55nC @ 10V | ±30V | 1800pF @ 300V | - | 156W (Tc) | 150°C (TJ) | Surface Mount | 4-DFN-EP (8x8) | 4-VSFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 6A (Ta) | 10V | 1.11 Ohm @ 3A, 10V | 4V @ 1mA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250 mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 100A TO-220 |
Active | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 3.8 mOhm @ 50A, 10V | 4V @ 1mA | 140nC @ 10V | ±20V | 8800pF @ 50V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 125 mOhm @ 7.5A, 10V | 3.5V @ 1.2mA | 40nC @ 10V | ±30V | 2400pF @ 300V | - | 180W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 25A TO-220SIS |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Ta) | 10V | 140 mOhm @ 7.5A, 10V | 4.5V @ 1.2mA | 60nC @ 10V | ±30V | 2400pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 100A TO220 |
Active | N-Channel | MOSFET (Metal Oxide) | 80V | 100A (Ta) | 10V | 3.2 mOhm @ 50A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 9000pF @ 40V | - | 255W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 38.8A TO-247 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65 mOhm @ 12.5A, 10V | 3.5V @ 1.9mA | 85nC @ 10V | ±30V | 4100pF @ 300V | Super Junction | 270W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 39A TO220-3 |
Active | N-Channel | MOSFET (Metal Oxide) | 600V | 38.8A (Ta) | 10V | 65 mOhm @ 19.4A, 10V | 3.7V @ 1.9mA | 110nC @ 10V | ±30V | 4100pF @ 300V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 0.15A CST3C |
Active | N-Channel | MOSFET (Metal Oxide) | 60V | 150mA (Ta) | 4.5V, 10V | 3.9 Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.35nC @ 4.5V | ±20V | 17pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3C | SOT-1123 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 4.2A |
Active | N-Channel | MOSFET (Metal Oxide) | 20V | 4.2A (Ta) | 1.5V, 4V | 28 mOhm @ 3A, 4V | 1V @ 1mA | 16.8nC @ 4V | ±10V | 1050pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UF6 | 6-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 6A 2-2AA1A |
Active | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.5V, 4.5V | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | ±8V | 1800pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |